A display apparatus is provided. The display apparatus includes: a housing including a base; a motor coupled to the housing; a plurality of rotating plates arranged at one side of the base in one direction and connected to the motor at a center of the base, the plurality of rotating plates configured to be rotated by the motor and the plurality of rotating plates including a first rotating plate and a second rotating plate; and a plurality of substrates, each of the plurality of substrates including an inorganic light emitting device such that the plurality of substrates are configured to display an image at the one side of the base in the one direction, the plurality of substrates including: a first substrate coupled to the first rotating plate, and a second substrate coupled to the second rotating plate.

A wafer-level ASIC 3D integrated substrate, a packaging device and a preparation method are disclosed. The substrate includes a first wiring layer conductive pillars, a molding layer, a second wiring layer, a bridge IC structure and solder balls. The first wiring layer includes a first dielectric layer and a first metal wire layer. The second wiring layer includes a second dielectric layer and a second metal wire layer. The conductive pillars are disposed between the first wiring layer and the second wiring layer, two ends of each of the conductive pillars are electrically connected to the first metal wire layer and the second metal wire layer, respectively. The bridge IC structure is electrically connected to at least one conductive pillar. The molding layer molds the conductive pillars and the bridge IC structure. The solder balls are disposed on a side of the second wiring layer and electrically connected to the second metal wire layer.

An integrated radar circuit comprising: a first substrate, of a first semiconductor material, said first substrate comprising an integrated transmit and receive radar circuit; a second substrate, of a second semiconductor material, said second substrate comprising at least on through-substrate cavity having cavity walls; at least one discrete transistor chip, of a third semiconductor material, said at least one discrete transistor chip having chip walls and being held in said at least one through-substrate cavity by a metal filling extending from at least one cavity wall to at least one chip wall; a conductor on said second substrate, electrically connecting a portion of said integrated transmit and receive radar circuit to a discrete transistor on said at least one discrete transistor chip.

A semiconductor device includes a substrate, a package structure, a thermal interface material (TIM) layer, and a lid structure. The package structure is disposed on the substrate. The TIM layer is disposed on the package structure. The TIM layer includes a liquid state metal material. The lid structure is disposed on the substrate and the TIM layer. The lid structure includes a trench facing the package structure. At least a portion of the TIM layer is located in the trench.

RF transistor amplifiers include an RF transistor amplifier die having a Group III nitride-based semiconductor layer structure and a plurality of gate terminals, a plurality of drain terminals, and at least one source terminal that are each on an upper surface of the semiconductor layer structure, an interconnect structure on an upper surface of the RF transistor amplifier die, and a coupling element between the RF transistor amplifier die and the interconnect structure that electrically connects the gate terminals, the drain terminals and the source terminal to the interconnect structure.

A transistor package that includes a metal submount; a transistor die mounted on said metal submount; a surface mount IPD component that includes a dielectric substrate; and the dielectric substrate mounted on said metal submount. Additionally, the dielectric substrate includes one of the following: an irregular shape, a non-square shape, and a nonrectangular shape.

An electronic assembly comprising a carrier wafer having a top wafer surface and a bottom wafer surface; an electronic integrated circuit being formed in the carrier wafer and comprising an integrated circuit contact pad on the top wafer surface; said carrier wafer comprising a through-wafer cavity having walls that join said top wafer surface to said bottom wafer surface; a component chip having a component chip top surface, a component chip bottom surface and component chip side surfaces, the component chip being held in said through-wafer cavity by direct contact of at least a side surface of said component chip with an attachment metal that fills at least a portion of said through-wafer cavity; said component chip comprising at least one component contact pad on said component chip bottom surface; and a conductor connecting said integrated circuit contact pad and said component contact pad.

A semiconductor package includes a package substrate, a semiconductor chip on the package substrate, the semiconductor chip including a logic chip and a memory stack structure on the logic chip, a connector and a connector terminal below the package substrate, a molding layer that covers the semiconductor chip, the molding layer having a recess region on a top surface of the molding layer, a housing that covers the molding layer, and an air gap on the semiconductor chip, the air gap being defined by the housing and the recess region of the molding layer, and the molding layer separating the air gap from the memory stack structure of the semiconductor chip.

An electronic component package includes a lid, a first layer, a second layer disposed between the first layer and the lid and configuring a first frame, a third layer disposed between the second layer and the lid and configuring a second frame, a bonding member bonding the third layer to the lid, and a via wire electrically coupled to the lid and penetrating the second frame, in which, when an inner diameter of a first corner portion of the first frame is denoted by R1 and an inner diameter of a second corner portion of the second frame overlapping the first corner portion in a plan view is denoted by R2, R1<R2, and an inner surface of the second corner portion protrudes more than an inner surface of the first corner portion in a cross-sectional view.

At least some embodiments of the present disclosure relate to a wearable device. The wearable device comprises a substrate, a detecting module disposed on the substrate, and a control module disposed on the substrate. The control module is electrically connected to the detecting module. The control module is configured to receive a signal from the detecting module and to control the wearable device in response to the signal.