A light-emitting diode (LED) sub-chip and a method of producing the same are provided. The LED sub-chip comprises an epitaxial layer disposed on a growth substrate, where the epitaxial layer comprises a plurality of electrodes. The groove disposed between the LED sub-chip and a second LED sub-chip, where the groove penetrates through the epitaxial layer separating the two sub-chips. The bridge insulating layer at least partially covering a sidewall of the groove, where the sidewall comprises a first surface and a second surface above the first surface, where the texture of the second surface is less granular than a texture of the first surface. The bridge electrode on the bridge insulating layer, where the bridge electrode connects respective electrodes of the two sub-chips at the first surface.

A multi-level semiconductor device, the device including: a first level including integrated circuits; a second level including a structure designed to conduct electromagnetic waves, where the second level is disposed above the first level, where the integrated circuits include single crystal transistors; and an oxide layer disposed between the first level and the second level, where the integrated circuits include at least one processor, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds.

A full-color display chip and a manufacturing process for a semiconductor chip. The full-color display chip comprises: a substrate, supporting an array of a pixel driver, a plurality of pairs of anode contact points of the pixel driver and cathode contact points of the pixel driver being arranged on the substrate; and two or more layers, stacked on the top of the substrate and the pixel driver, each layer comprising a micro LED light-emitting structure, each layer of LED light-emitting structure being provided with an anode electrode in conduction with the anode contact points and a cathode electrode in conduction with the cathode contact points, and two adjacent layers of LED light-emitting structures being stacked up and down. The full-color display chip may have advantages of low pixel density and a large light-emitting area, and the manufacturing process has the advantages of high interconnection density and small device input.

A micro light-emitting diode display device includes a circuit substrate and a plurality of display pixels. The display pixels are arranged on the circuit substrate and are respectively electrically connected to the circuit substrate. Each display pixel includes a plurality of micro light-emitting elements. In each display pixel, a part of the micro light-emitting elements form at least one series-connection structure, and the micro light-emitting elements of the series-connection structure are within a wavelength range of the same lighting color. The circuit substrate respectively provides a same driving voltage to drive the micro light-emitting elements included in the series-connection structure of each display pixel and the micro light-emitting elements excluded from the series-connection structure.

A method of preparing a substrate for substrate bonding is provided. The method comprises: forming a recess in a substrate surface of the substrate, and forming a bondable dielectric layer on the substrate surface of the substrate. The bondable dielectric layer has a bonding surface on an opposite side of the bondable dielectric layer to the substrate surface, wherein the recess and the bondable dielectric layer define a dielectric cavity having a dielectric cavity volume. A plug is formed configured to make electrical contact to the substrate in the dielectric cavity volume. The plug has a plug volume which is less than the dielectric cavity volume, wherein the plug extends from the dielectric cavity beyond the bonding surface in a direction generally normal to the bonding surface. The plug is coined by compressing the substrate between opposing planar surfaces such that a contact surface of the plug is made co-planar with the bonding surface.

A method for bonding detection includes: disposing a liquid crystal component on one side of a growth substrate away from a light-emitting element; disposing a first electrode layer on one side of the liquid crystal component away from the growth substrate, and disposing a first polarizer on one side of the first electrode layer away from the liquid crystal component; disposing a second electrode layer on one side of a transient substrate away from an adhesive layer, and disposing a second polarizer on one side of the second electrode layer away from the transient substrate, polarization directions of the second polarizer and the first polarizer are orthogonal; irradiating the first polarizer with a uniform light; electrifying the first electrode layer and the second electrode layer; and detecting a uniformity and a thickness of the adhesive layer according to the light exited from one side of the second polarizer.

A semiconductor light emitting device includes a light emitting structure having a rod shape with first and second surfaces opposing each other and a side surface connected between the first and second surfaces, and including a first conductivity-type semiconductor providing the first surface, an active layer and a second conductivity-type semiconductor, a first electrode layer on a first region of the first surface of the light emitting structure and connected to the first conductivity-type semiconductor, the first region having a level that is vertically offset from a level of a second region adjacent thereto, and a second electrode layer connected to the second conductivity-type semiconductor.

A quantum dot LED display apparatus includes a substrate having a plurality of banks deposited thereon. A plurality of red emitting LED sub-pixels, green emitting LED sub-pixels, and blue emitting LED sub-pixels are individually disposed between the banks. Each of the red emitting LED sub-pixels, green emitting LED sub-pixels, and blue emitting LED sub-pixels has an emissive layer, wherein each of the emissive layers comprises quantum dots, an organic matrix, and a photoinitiator. A first concentration of the photoinitiator in the blue emitting LED sub-pixels is lower than a second concentration of the photoinitiator in the red emitting LED sub-pixels, and lower than a third concentration of the photoinitiator in the green emitting LED sub-pixels.

A method for fabricating a micro-light emitting diode (LED) display panel, including: forming a stack structure on a wafer substrate, the stack structure including a first metal layer, a first type of light emitting layer, a second metal layer, and a second type of light emitting layer in an order from bottom to top; forming a plurality of trenches in the stack structure, the plurality of trenches defining a plurality of micro LED display panel areas; patterning the second type of light emitting layer and the second metal layer; selectively etching the stack structure to expose a side surface of the first metal layer, thereby forming a plurality of first LEDs and a plurality of second LEDs in each micro LED display panel area; and cutting the wafer substrate to form a plurality of micro LED display panels.

This disclosure discloses a light-emitting diode chip, a method for fabricating the same, a backlight module, and a display device. The light-emitting diode chip includes: a transparent base substrate; at least one light-emitting diode located on one side of the base substrate; and a dimming structure located on a side of the base substrate away from the light-emitting diode, wherein the light-emitting diode is configured to emit light from double sides thereof; and the dimming structure is configured to adjust the intensity of light emitted from the side of the base substrate away from the light-emitting diode.