A semiconductor device includes: a semiconductor chip; and an Ag fired cap formed so as to cover a source pad electrode formed on the semiconductor chip. The semiconductor chip is disposed on a first substrate electrode, and one end of a Cu wire is bonded onto the Ag fired cap by means of an ultrasonic wave. There is provided a semiconductor device capable of improving a power cycle capability, and a fabrication method of such a semiconductor device.

An object of the present invention is to provide a Schottky barrier diode less apt to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 that surrounds the anode electrode 40 in a plan view, and the outer peripheral trench 10 is filled with a semiconductor material 11 having a conductivity type opposite to that of the drift layer 30. An electric field is dispersed by the presence of the thus configured outer peripheral trench 10. This alleviates electric field concentration on the corner of the anode electrode 40, making it less apt to cause dielectric breakdown.

An object of the present invention is to provide a Schottky barrier diode less apt to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 that surrounds the anode electrode 40 in a plan view, and the outer peripheral trench 10 is filled with a semiconductor material 11 having a conductivity type opposite to that of the drift layer 30. An electric field is dispersed by the presence of the thus configured outer peripheral trench 10. This alleviates electric field concentration on the corner of the anode electrode 40, making it less apt to cause dielectric breakdown.

In various embodiments of the present disclosure, a molecular electronics sensor array chip comprises: (a) an integrated circuit semiconductor chip; and (b) a plurality of molecular electronic sensor devices disposed thereon, each of said sensor devices comprising: (i) a pair of nanoscale source and drain electrodes separated by a nanogap; (ii) a gate electrode; and (iii) a bridge and/or probe molecule spanning the nanogap and connecting the source and drain electrodes, wherein the molecular electronic sensor devices are organized into an electronically addressable, controllable, and readable array of sensor pixels.

A transistor includes a first gate structure, a channel layer, and source/drain contacts. The first gate structure includes nanosheets. The channel layer is over the first gate structure. A portion of the channel layer wraps around the nanosheets of the first gate structure. The source/drain contacts are aside the nanosheets. The source/drain contacts are electrically connected to the channel layer.

An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode 40 brought into Schottky contact with the drift layer, a cathode electrode brought into ohmic contact with the semiconductor substrate, an insulating layer provided on the drift layer so as to surround the anode electrode in a plan view, and a semiconductor layer provided on a surface of a part of the drift layer that is positioned between the anode electrode and the insulating layer and on the insulating layer. The semiconductor layer has a conductivity type opposite to that of the drift layer.

An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode 40 brought into Schottky contact with the drift layer, a cathode electrode brought into ohmic contact with the semiconductor substrate, an insulating layer provided on the drift layer so as to surround the anode electrode in a plan view, and a semiconductor layer provided on a surface of a part of the drift layer that is positioned between the anode electrode and the insulating layer and on the insulating layer. The semiconductor layer has a conductivity type opposite to that of the drift layer.

The present invention provides a novel semiconductor device for high breakdown voltage having no drift layer. The semiconductor device includes a first semiconductor layer of a first conductivity type which is either a p-type or an n-type conductivity type, a source portion arranged so as to be in contact with the first semiconductor layer and configured as a semiconductor portion of a second conductivity type different from the first conductivity type, a source electrode arranged in ohmic contact with the source portion, a gate electrode arranged on at least one selected from surfaces of the first semiconductor layer via a gate insulating film interposed therebetween and capable of forming by an applied electric field, an inversion layer in a region of the first semiconductor layer near the surface of the first semiconductor layer contacting the gate insulating film, a second semiconductor layer of the first conductivity type arranged so as to be in contact with the inversion layer, and a drain electrode separated from the inversion layer and arranged in Schottky contact with the second semiconductor layer.

The present invention provides a novel semiconductor device for high breakdown voltage having no drift layer. The semiconductor device includes a first semiconductor layer of a first conductivity type which is either a p-type or an n-type conductivity type, a source portion arranged so as to be in contact with the first semiconductor layer and configured as a semiconductor portion of a second conductivity type different from the first conductivity type, a source electrode arranged in ohmic contact with the source portion, a gate electrode arranged on at least one selected from surfaces of the first semiconductor layer via a gate insulating film interposed therebetween and capable of forming by an applied electric field, an inversion layer in a region of the first semiconductor layer near the surface of the first semiconductor layer contacting the gate insulating film, a second semiconductor layer of the first conductivity type arranged so as to be in contact with the inversion layer, and a drain electrode separated from the inversion layer and arranged in Schottky contact with the second semiconductor layer.

The present disclosure relates to a semiconductor device and a manufacturing method thereof; wherein the semiconductor device comprises a semiconductor device layer including one or more semiconductor devices; a first electrode interconnection layer disposed on a first side of the semiconductor device layer; one or more first metal pillars disposed on the first side of the semiconductor device layer and electrically connected to the first electrode interconnection layer; a first insulating material disposed around the one or more first metal pillars, wherein the first insulating material is an injection molding material; and a second electrode interconnection layer disposed on a second side opposite to the first side of the semiconductor device layer. In the technical scheme of the present disclosure, the temporary substrate is not required to achieve better support strength and complete the related processes of the semiconductor manufacturing process, which is convenient, convenient and low in cost.