A one or multi-die module comprises multiple dies. The module includes at least one die with a sensor having a sensing region, an encapsulation layer covering top sides of the multiple dies, and a redistribution layer covering bottom sides of the multiple dies except for the sensing region. In embodiments, a cap is formed over the sensing region, which has at least a portion that is spaced away from a bottom side of the module. Metal connectors, such as solder balls, are formed on the redistribution layer to provide connection points to the module. A height of the cap from the bottom side of the module should be less than a height of the metal connectors. This approach can be used to incorporate environmental sensor dies into multi-die modules. It utilizes RDL and openings in the RDL in order to provide robust packaging for the dies, while also allowing the sensor dies to be selectively exposed to the environment.

An integrated circuit device that comprises a single semiconductor substrate, a device layer formed on a frontside of the single semiconductor substrate, a redistribution layer formed on a backside of the single semiconductor substrate, a through silicon via (TSV) formed within the single semiconductor substrate that is electrically coupled to the device layer and to the redistribution layer, a logic-memory interface (LMI) formed on a backside of the single semiconductor substrate that is electrically coupled to the redistribution layer, and a MEMS device formed on the backside of the single semiconductor substrate that is electrically coupled to the redistribution layer.

An integrated circuit device that comprises a single semiconductor substrate, a device layer formed on a frontside of the single semiconductor substrate, a redistribution layer formed on a backside of the single semiconductor substrate, a through silicon via (TSV) formed within the single semiconductor substrate that is electrically coupled to the device layer and to the redistribution layer, a logic-memory interface (LMI) formed on a backside of the single semiconductor substrate that is electrically coupled to the redistribution layer, and a MEMS device formed on the backside of the single semiconductor substrate that is electrically coupled to the redistribution layer.

A MEMS component includes, on a substrate, component structures, contact areas connected to the component structures, metallic column structures seated on the contact areas, and metallic frame structures surrounding the component structures. A cured resist layer is seated on frame structure and column structures such that a cavity is enclosed between substrate, frame structure and resist layer. A structured metallization is provided directly on the resist layer or on a carrier layer seated on the resist layer. The structured metallization includes at least external contacts of the component and being electrically conductively connected both to metallic structures and to the contact areas of the component structures.

A semiconductor sensor assembly for use in a corrosive environment comprises a processing device comprising at least one first bondpad of a material which may be corroded by a corrosive component in a corrosive environment; a sensor device comprising at least one second bondpad consisting of and/or being covered by a first corrosion resistant material; at least one bonding wire for making a signal connection between the at least one first bondpad of the processing device and the second bondpad of the sensor device. The processing device is partially overmoulded by a second corrosion resistant material, and is partially exposed to a cavity in the corrosion resistant material, with the sensor device being present in the cavity. A redistribution layer is provided to enable signal connection between the processing device and the sensor device is physically made in the cavity while the second corrosion resistant material covers the first bondpad.

A semiconductor sensor assembly for use in a corrosive environment comprises a processing device comprising at least one first bondpad of a material which may be corroded by a corrosive component in a corrosive environment; a sensor device comprising at least one second bondpad consisting of and/or being covered by a first corrosion resistant material; at least one bonding wire for making a signal connection between the at least one first bondpad of the processing device and the second bondpad of the sensor device. The processing device is partially overmoulded by a second corrosion resistant material, and is partially exposed to a cavity in the corrosion resistant material, with the sensor device being present in the cavity. A redistribution layer is provided to enable signal connection between the processing device and the sensor device is physically made in the cavity while the second corrosion resistant material covers the first bondpad.

A flow sensor structure seals the surface of an electric control circuit and part of a semiconductor device via a manufacturing method that prevents occurrence of flash or chip crack when clamping the semiconductor device via a mold. The flow sensor structure includes a semiconductor device having an air flow sensing unit and a diaphragm, and a board or lead frame having an electric control circuit for controlling the semiconductor device, wherein a surface of the electric control circuit and part of a surface of the semiconductor device is covered with resin while having the air flow sensing unit portion exposed. The flow sensor structure may include surfaces of a resin mold, a board or a pre-mold component surrounding the semiconductor device that are continuously not in contact with three walls of the semiconductor device orthogonal to a side on which the air flow sensing unit portion is disposed.

A flow sensor structure seals the surface of an electric control circuit and part of a semiconductor device via a manufacturing method that prevents occurrence of flash or chip crack when clamping the semiconductor device via a mold. The flow sensor structure includes a semiconductor device having an air flow sensing unit and a diaphragm, and a board or lead frame having an electric control circuit for controlling the semiconductor device, wherein a surface of the electric control circuit and part of a surface of the semiconductor device is covered with resin while having the air flow sensing unit portion exposed. The flow sensor structure may include surfaces of a resin mold, a board or a pre-mold component surrounding the semiconductor device that are continuously not in contact with three walls of the semiconductor device orthogonal to a side on which the air flow sensing unit portion is disposed.

A pressure sensor includes a base including an accommodation portion, a pressure sensor element disposed in the accommodation portion, and a lead portion electrically-connected to the pressure sensor element, including a terminal portion provided along a lower surface of the base, and being exposed to an outside of the base, where the terminal portion includes a recessed groove portion provided on a second surface which is an opposite surface of a first surface facing the body, and where the recessed groove portion divides at the second surface, a first region including a tip of the terminal portion and a second region next to the first region and away from the tip of the terminal portion.

A pressure sensor includes a base including an accommodation portion, a pressure sensor element disposed in the accommodation portion, and a lead portion electrically-connected to the pressure sensor element, including a terminal portion provided along a lower surface of the base, and being exposed to an outside of the base, where the terminal portion includes a recessed groove portion provided on a second surface which is an opposite surface of a first surface facing the body, and where the recessed groove portion divides at the second surface, a first region including a tip of the terminal portion and a second region next to the first region and away from the tip of the terminal portion.