A sensor package structure includes a substrate, a sensor chip and a ring-shaped solder mask frame those are disposed on the substrate, a ring-shaped support disposed on a top side of the annular solder mask frame, and a light permeable member that is disposed on the ring-shaped support. The sensor chip is electrically coupled to the substrate. A top surface of the sensor chip has a sensing region, and the sensing region is spaced apart from an outer lateral side of the sensor chip by a distance less than 300 μm. The ring-shaped solder mask frame surrounds and contacts the outer lateral side of the sensor chip. The light permeable member, the ring-shaped support, and the sensor chip jointly define an enclosed space.

There is set forth herein an optoelectrical device, comprising: a substrate; an interposer dielectric stack formed on the substrate, the interposer dielectric stack including a base interposer dielectric stack, a photonics device dielectric stack, and a bond layer that integrally bonds the photonics device dielectric stack to the base interposer dielectric stack. There is set forth herein a method comprising building an interposer base structure on a first wafer having a first substrate, including fabricating a plurality of through vias in the first substrate and fabricating within an interposer base dielectric stack formed on the first substrate one or more metallization layers; and building a photonics structure on a second wafer having a second substrate, including fabricating one or more photonics devices within a photonics device dielectric stack formed on the second substrate.

One or more stud bumps may form a conductive column to a component having back side metallization. In an embodiment, the column of stud bumps may be about 130 um vertically (Z-direction). Providing a microelectronics package with a column of stud bumps electrically connected to a component having back side metallization may provide a cost effective electrical interconnect and may enable the incorporation of components of different thicknesses, including that the component thicknesses are independent of each other, in a single fanout package, while providing a thin package profile and back side surface finish integration.

In a case of a multilayer wiring structure in which an insulating layer provided between wires is made of a material having high transmittance of light in a visible range containing ultraviolet rays, wires in the upper layer and those in a lower layer may be recognized together when defects of an upper layer are visually inspected. In this case, the lower layer may be noise for the inspection of the wires in the upper layer, lowering inspection accuracy. This lowered inspection accuracy has inhibited improvement in manufacturing yields and reliability. In order to solve this issue, a multilayer wiring substrate of the disclosure includes: a substrate; and a first wire and a second wire that are provided on the substrate with an insulating layer having a light transmitting property in between, and one or both of which are subjected to a surface treatment.

We disclose a chemical sensing device for detecting a fluid. The sensing device comprises: at least one substrate region comprising at least one etched portion; a dielectric region formed on the at least one substrate region, the dielectric region comprising at least one dielectric membrane region adjacent to the at least one etched portion; an optical source for emitting an infra-red (IR) signal; an optical detector for detecting the IR signal emitted from the optical source; one or more further substrates formed on or under the dielectric region, said one or more further substrates defining an optical path for the IR signal to propagate from the optical source to the optical detector. At least one of the optical source and optical detector is formed in or on the dielectric membrane region.

A semiconductor apparatus with an optoelectronic device and a further device is disclosed. Embodiments of the invention provide a semiconductor apparatus with an optoelectronic device and a further device, wherein the optoelectronic device and the further device are interconnected to one another in parallel when the semiconductor apparatus is in operation, wherein the optoelectronic device is connected to a first contact and a second contact, the first contact and the second contact being configured to externally contact the semiconductor apparatus, and wherein the further device is connected with at least one further contact of the semiconductor apparatus.

According to one general aspect, an apparatus may include a memory circuit die configured to store a lookup table that converts first data to second data. The apparatus may also include a logic circuit die comprising combinatorial logic circuits configured to receive the second data. The apparatus may further include an optical via coupled between the memory circuit die and the logical circuit die and configured to transfer second data between the memory circuit die and the logic circuit die.

A chip package includes a chip, an insulating layer, a flowing insulating material layer and conductive layer. The chip has a conductive pad, a side surface, a first surface and a second surface opposite to the first surface, which the side surface is between the first surface and the second surface, and the conductive is below the first surface and protruded from the side surface. The insulating layer covers the second surface and the side surface, and the flowing insulating material layer is disposed below the insulating layer, and the flowing insulating material layer has a trench exposing the conductive pad protruded form the side surface. The conductive layer is disposed below the flowing insulating material layer and extended into the trench to contact the conductive pad.

An imager module having an interposer chip electrically connected to and routing signals between an image sensor, a printed circuit board (PCB), and a voice coil motor (VCM) is disclosed. In some example embodiments, one or more surface mount devices (SMDs) may further be attached to the interposer chip, the PCB, or both the interposer chip and the PCB. The interposer chip may further have a cavity therethrough to allow light to impinge in the image sensor. The interposer chip may still further have through silicon vias (TSVs) to route signals from the PCB to the VCM.

The invention relates to a method for producing a plurality of optoelectronic semiconductor components (1), comprising the following steps: a) providing a semiconductor layer sequence (2) having a plurality of semiconductor body regions (200); b) providing a plurality of carrier bodies (3), which each have a first contact structure (31) and a second contact structure (32); c) forming a composite (4) having the semiconductor layer sequence and the carrier bodies in such a way that adjacent carrier bodies are separated from one another by interspaces (35) and each semiconductor body area is electrically conductive connected to the first contact structure and the second contact structure of the associated carrier body; and d) separating the composite into the plurality of semiconductor components, wherein the semiconductor components each have a semiconductor body (20) and a carrier body. The invention further relates to an optoelectronic semiconductor component (1).