An optical sensor includes at least one photodetector configured to be reverse biased at a voltage exceeding a breakdown voltage by an excess bias voltage. At least one control unit is configured to adjust the reverse bias of the at least one photodetector. A method of operating an optical sensor is also disclosed.

Disclosed herein is an apparatus and a method of making the apparatus. The method comprises obtaining a plurality of semiconductor single crystal chunks. Each of the plurality of semiconductor single crystal chunks may have a first surface and a second surface. The second surface may be opposite to the first surface. The method may further comprise bonding the plurality of semiconductor single crystal chunks by respective first surfaces to a first semiconductor wafer. The plurality of semiconductor single crystal chunks forming a radiation absorption layer. The method may further comprise forming a plurality of electrodes on respective second surfaces of each of the plurality of semiconductor single crystal chunks, depositing pillars on each of the plurality of semiconductor single crystal chunks and bonding the plurality of semiconductor single crystal chunks to a second semiconductor wafer by the pillars.

An opaque dielectric carrier and confinement substrate is formed by a stack of layers laminated on each other. The stack includes a solid back layer and a front frame having a peripheral wall and an intermediate partition which delimits two cavities located on top of the solid back layer and on either side of the intermediate partition. Electronic integrated circuit (IC) chips are located inside the cavities and mounted on top of the solid back layer. Each IC chip includes an integrated optical element. Electrical connections are provided between the IC chips and back electrical contacts of the solid back layer. Transparent encapsulation blocks are molded in the cavities to embed the IC chips.

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

Some embodiments of the present disclosure relate to a system. In some embodiments, the system includes a photovoltaic module and a module-level power electronics device electrically connected to the photovoltaic module. In some embodiments, the module-level power electronics device comprises a laminated potted printed circuit board. In some embodiments, the laminated potted printed circuit board comprises a potted printed circuit board and an encapsulant covering the potted printed circuit board. In some embodiments, the potted printed circuit board comprises: a printed circuit board having a top surface, and a pottant covering the top surface of the printed circuit board. In some embodiments, the laminated potted printed circuit board is substantially void-free.

A photosensitive module is provided. The photosensitive module includes a base, an integrated package substrate, and a photosensitive element. The integrated package substrate is connected to the base. The integrated package substrate has a plurality of first electronic components, and the first electronic components are housed inside the integrated package substrate without being exposed to external environment. The photosensitive element is connected to the base, and the photosensitive element is configured to receive a light beam traveling along an optical axis.

An imaging device capable of executing image processing is provided. A structure is employed in which a photoelectric conversion element, a first transistor, a second transistor, and an inverter circuit are included; one electrode of the photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor; the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor; the one of the source and the drain of the second transistor is electrically connected to an input terminal of the inverter circuit; and data obtained by photoelectric conversion is binarized and output.

An optical member driving mechanism is provided, including a movable portion, a fixed portion, and a driving assembly. The movable portion is connected to an optical member. The movable portion is movable relative to the fixed portion. The driving assembly is configured to drive the movable portion to move relative to the fixed portion.

A photosensitive module is provided. The photosensitive module includes a base, an integrated package substrate, and a photosensitive element. The integrated package substrate is connected to the base. The integrated package substrate has a plurality of first electronic components, and the first electronic components are housed inside the integrated package substrate without being exposed to external environment. The photosensitive element is connected to the integrated package substrate, and the photosensitive element is configured to receive a light beam traveling along an optical axis.

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.