A sensor and a 3-D position detection system are disclosed. In an embodiment a sensor includes at least one sensor chip configured to detect radiation, at least one carrier on which the sensor chip is mounted and a cast body that is transmissive for the radiation and that completely covers the sensor chip, wherein a centroid shift of the sensor chip amounts to at most 0.04 mrad at an angle of incidence of up to at least 60°, wherein the cast body comprises a light inlet side that faces away from the sensor chip, and the light inlet side comprises side walls bounding it on all sides, wherein the side walls are smooth, planar and transmissive for the radiation, wherein a free field-of-view on the light inlet side has an aperture angle of at least 140°, and wherein the cast body protrudes in a direction away from the sensor chip beyond a bond wire.

A semiconductor light-emitting device includes a GaAs (gallium arsenide) substrate of a cubic crystal, a light-emitting layer and a multi-semiconductor layer. The light-emitting layer being provided on the GaAs substrate. The light-emitting layer includes InGaAs (indium gallium arsenide) represented by a compositional formula InxGa1-xAs (0<x<1). The multi-semiconductor layer being provided on a front surface of the GaAs substrate between the GaAs substrate and the light-emitting layer. The multi-semiconductor layer is tilted with respect to a (100) plane of the cubic crystal. The multi-semiconductor layer includes a first layer and a second layer. The first and second layers are alternately stacked in a direction perpendicular to the front surface of the GaAs substrate. The first layer is different in composition from the second layer.

A semiconductor light-emitting device includes a GaAs (gallium arsenide) substrate of a cubic crystal, a light-emitting layer and a multi-semiconductor layer. The light-emitting layer being provided on the GaAs substrate. The light-emitting layer includes InGaAs (indium gallium arsenide) represented by a compositional formula InxGa1-xAs (0<x<1). The multi-semiconductor layer being provided on a front surface of the GaAs substrate between the GaAs substrate and the light-emitting layer. The multi-semiconductor layer is tilted with respect to a (100) plane of the cubic crystal. The multi-semiconductor layer includes a first layer and a second layer. The first and second layers are alternately stacked in a direction perpendicular to the front surface of the GaAs substrate. The first layer is different in composition from the second layer.

A sensor device according to the present disclosure includes: a Peltier element; a sensor element thermally connected to a cooling surface of the Peltier element; and a package substrate that is thermally connected to a heat dissipation surface of the Peltier element and accommodates the Peltier element and the sensor element. In addition, the package substrate has a heat dissipation member, made of a material having a higher thermal conductivity than a material of the package substrate, on at least a part of a surface facing the heat dissipation surface of the Peltier element.

A light sensing module includes a substrate, a light sensing unit, a first light-transmissive component, and a light shielding layer. The light sensing unit is disposed on the substrate to sense an intensity of a working light beam, and has an upper light receiving surface and a lateral surface perpendicular to the upper light receiving surface. The first light-transmissive component covers the light sensing unit, and has a first refractive index between a refractive index of the light sensing unit and a refractive index of air. The light shielding layer surrounds the lateral surface and is covered by the first light-transmissive component.

A shielding element comprises a rigid substrate and at least one electrically conductive two-dimensional structure which is placed on one of the faces of the substrate. The substrate and the electrically conductive two-dimensional structure are such that the shielding element has optical-transmission and shielding-efficiency values at least one of which varies between two zones of the shielding element. Such a shielding element enables easier assembly of a detection system comprising multiple optical sensors.

A shielding element comprises a rigid substrate and at least one electrically conductive two-dimensional structure which is placed on one of the faces of the substrate. The substrate and the electrically conductive two-dimensional structure are such that the shielding element has optical-transmission and shielding-efficiency values at least one of which varies between two zones of the shielding element. Such a shielding element enables easier assembly of a detection system comprising multiple optical sensors.

A metal stem includes a cylindrical portion in which an FPC inserting portion is formed, and a base standing upright from one plane of the cylindrical portion. A tubular lens cap with one open end is fixed to a peripheral portion of the one plane of the cylindrical portion, and has a lens mounted on a bottomed portion. A substrate mounted on one plane of the base includes a signal wiring layer and a ground wiring layer. An optical semiconductor element is mounted on the substrate and has a signal terminal connected to the signal wiring layer of the substrate, and a ground terminal connected to the ground wiring layer of the substrate. An FPC substrate is disposed so as to pass through the FPC inserting portion and to face the one plane of the base. The FPC substrate includes a signal wiring layer connected to the signal wiring layer of the substrate with a metal wire.

A light detecting element is realized in which a length thereof is reduced in a direction perpendicular to a direction in which light detecting regions are disposed side by side. A light detecting element includes a light detecting surface provided with a plurality of light detecting regions disposed side by side in a first direction and a plurality of wiring regions electrically connected to the plurality of light detecting regions. Of the plurality of wiring regions, a plurality of the wiring regions connected to a plurality of the light detecting regions are provided in an end region that is a region excluding a central region at the light detecting surface.

Structures for a photodetector and methods of fabricating a structure for a photodetector. The structure includes a first waveguide core having a first taper, a semiconductor layer having a sidewall adjacent to the first taper, and a second waveguide core having a second taper that is positioned to overlap with the first taper and a curved section. The second taper is longitudinally positioned between the sidewall of the semiconductor layer and the curved section. The curved section terminates the second waveguide core.