A resin composition includes: a compound represented by Formula (1); and a resin, in the formula, A and B each independently represent an aromatic hydrocarbon ring or an aromatic heterocycle, Ra and Rb each independently represent a substituent, m1 represents an integer of 0 to mA, m2 represents an integer of 0 to mB, Y.sup.1 and Y.sup.2 each independently represent an alkyl group, an aryl group, a group represented by Formula (Y-1), or a group represented by Formula (Y-2), and at least one of Y.sup.1 or Y.sup.2 represents a group represented by Formula (Y-1) or a group represented by Formula (Y-2). ##STR00001##

The present embodiments provide a transparent electrode having a laminate structure of: a metal oxide layer having an amorphous structure and electroconductivity, and a metal nanowire layer; and further comprising an auxiliary metal wiring. The auxiliary metal wiring covers a part of the metal nanowire layer or of the metal oxide layer, and is connected to the metal nanowire layer.

A shielding element comprises a rigid substrate and at least one electrically conductive two-dimensional structure which is placed on one of the faces of the substrate. The substrate and the electrically conductive two-dimensional structure are such that the shielding element has optical-transmission and shielding-efficiency values at least one of which varies between two zones of the shielding element. Such a shielding element enables easier assembly of a detection system comprising multiple optical sensors.

The present disclosure provides an electronic package. The electronic package includes a substrate, a first component disposed on the substrate and configured to detect an external signal, and an encapsulant disposed on the substrate. The electronic package also includes a protection element disposed on the substrate and physically separating the first device from the encapsulant and exposing the first device. The present disclosure also provides an electronic device.

A filter for infrared radiation is provided as a photonic cooler coating. The filter for infrared radiation includes a first metal oxide; a second metal oxide; and a metal layer, wherein the first metal oxide layer is provided between the second metal oxide layer and the metal layer.

In an illuminance sensor, a slow axis of a first quarter-wave plate has a relation of +45° or −45° in regard to a polarization direction of a first linear polarization plate; a relation of a slow axis of a first portion of a second quarter-wave plate in regard to a polarization direction of a second linear polarization plate is the same with relation of the slow axis of the first quarter-wave plate in regard to the polarization direction of the first linear polarization plate, that is, +45° or −45°; and a relation of a slow axis of a second portion of the second quarter plate in regard to the polarization direction of the second linear polarization plate is −45° or +45° that is opposite in sign to the relation of the slow axis of the first quarter-plate in regard to the polarization direction of the first linear polarization plate.

An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

Embodiments of the present disclosure provide for methods of making substrates having an (AR) antireflective layer, substrates having an antireflective layer, devices including a substrate having an antireflective layer, and the like. The AR layer can have a total specular reflection of less than 10% at a wavelength of about 400-800 nm, and a height of about 500-1000 nm.

A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.

A semiconductor component may include a first compressive strain layer on top of a semiconductor body. A material for the first compressive strain layer may include Ta, Mo, Nb, compounds thereof, and combinations thereof.