The present invention relates to hybrid transparent conducting electrode comprising reduced graphene oxide film, metal mesh and textured glass, wherein the reduced graphene oxide film is coated on the textured glass embedded with the metal mesh or the reduced graphene oxide film is sandwiched between the textured glass and the metal mesh. The present invention also relates to a process of preparing the hybrid conducting transparent conducting electrode. The said transparent conducting electrode exhibits transparency ranging from about 70% to 85% with sheet resistance ranging from about 5 Ω/sq to 100 Ω/sq.

A solar cell panel includes a plurality of solar cells including first and second solar cells, and a plurality of wiring members electrically connecting the first and second solar cells. A first electrode of each of the first and second solar cells includes a first bus bar including a plurality of first pad portions. The plurality of first pad portions include a first end pad positioned on one end side of the first bus bar and on which an end of the wiring member is positioned, and a first extension pad positioned on the other end side of the first bus bar and on an extension of the wiring member. An area of the first end pad is different from an area of the first extension pad.

The present invention relates to a photo-charging energy storage device, and has been made in an effort to provide a photo-charging energy storage device which is capable of self-charging by combining a solar cell and a supercapacitor and used as a power source of an IoTs sensor.

The resulting photo-charging energy storage device according to the present invention includes: a solar cell; a conductive connector electrically connected to the solar cell, and combined with the solar cell; and a supercapacitor combined with the conductive connector, and charged with the solar cell via an electrical connection with the solar cell through the conductive connector.

According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

An apparatus comprising a substrate, one or more nanowire pillars, each having a base portion and a tip portion, a first electrode connected to the tip portions of the one or more nanowire pillars, an internal hollow cavity positioned between the substrate and the first electrode, such that at least a portion of each of the one or more nanowire pillars extend through the internal hollow cavity, and a second electrode proximate the first side of the substrate. High-performance broadband photodetectors and other optoelectronics for converting light to electricity with enhanced absorption and carrier collection.

A mixed silver powder and a conductive paste comprising the powder are disclosed. The mixed silver powder is obtained by mixing two or more spherical silver powders having different properties from each other. The mixed powder may minimize the disadvantages of the respective types of the two or more powders and maximize the advantages thereof, thereby improving the characteristics of products. In addition, by comprehensively controlling the particle size distribution of surface-treated mixed silver powder and the particle diameter and specific gravity of primary particles, a high-density conductor pattern, a precise line pattern, and the suppression of aggregation over time can be simultaneously achieved.

A photoconductive transducer intended to generate or detect waves in the terahertz frequency domain or in the picosecond pulse domain is provided. The transducer comprises a three-dimensional structure that includes, in this order, a first planar electrode, an array of nano-columns embedded in a layer of resist and a second planar electrode parallel to the first planar electrode. The design of the transducer increases the optical-to-terahertz conversion efficiency by means of photonic and plasmonic resonances and by means of high and homogeneous electric fields. The height of the nano-columns as well as the thickness of the resist range between 100 nanometres and 400 nanometres. The width of the nano-columns is between 100 nanometres and 400 nanometres, the distance between two adjacent nano-columns is between 300 nanometres and 500 nanometres, the nano-columns are made of a III-V semiconductor. The second electrode is transparent, so as to allow the transmission of a laser source towards the photo-absorbing nano-columns.

A solid-state component responds to electromagnetic radiation and may be used as a photovoltaic element, as a photoelectric sensor, as a photocatalyst, or as a power store. The solid-state component has asymmetrical electrodes which face each other and are electron-conductively connected to each other by a semiconductor material and a coating in such a way that an open terminal voltage of 1.8 volts or even more is achieved by acting electromagnetic radiation.

The present embodiments provide a transparent electrode having a laminate structure of: a metal oxide layer having an amorphous structure and electroconductivity, and a metal nanowire layer; and further comprising an auxiliary metal wiring. The auxiliary metal wiring covers a part of the metal nanowire layer or of the metal oxide layer, and is connected to the metal nanowire layer.

To provide a transparent electrode that hardly causes migration of silver and has high resistance, a method for producing the same, and an electronic device using the transparent electrode.

A transparent electrode according to the embodiment includes a laminated structure in which a transparent base material, a conductive silver-containing layer, and a conductive oxide layer are laminated in this order,

wherein a ratio T.sub.800/T.sub.600 of total transmittances of the transparent electrode is 0.85 or more, where T.sub.800 and T.sub.600 are transmittances at wavelengths of 800 nm and 600 nm, respectively, and

the silver-containing layer is continuous. This electrode can be produced by bringing sulfur or a sulfur compound into contact with a laminated film in which a conductive silver-containing layer and a conductive oxide layer are laminated to form a sulfur-containing silver compound layer.