An optical device stack includes at least one of a photodetector or an optical emitter and a metasurface. The metasurface is disposed over a light-receiving surface of the photodetector or a light emission surface of the optical emitter. The metasurface includes a first conductive layer having an electrically-tunable optical property and an array of conductive nanostructures disposed on a first side of the first conductive layer. A second conductive layer is disposed on a second side of the first conductive layer. An electrical insulator is disposed between the first conductive layer and the second conductive layer. A change in an electrical bias between the metasurface and the second conductive layer, from a first electrical bias to a second electrical bias, tunes the electrically-tunable optical property from a first state to a second state, and changes an electrically-tunable optical filtering property of the metasurface.

Disclosed is a solar cell module including a first solar cell unit including a plurality of solar cells and a plurality of condensing layers, which are arranged alternately, a second solar cell unit including a plurality of solar cells and a plurality of condensing layers, which are arranged alternately, and each of the plurality of solar cells of the first solar cell unit and the second solar cell unit includes a first electrode disposed on one side thereof and a second electrode disposed on an opposite side thereof, whereby a visibility, by which the light passes through the solar cell module, is increased by including the plurality of solar cells and the plurality of condensing layers, through which a visual ray may pass.

Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

A fabrication method for stretchable/conformable electronic and optoelectronic circuits and the resulting circuits. The method may utilize a variety of electronic materials including, but not limited to Silicon, GaAs, InSb, Pb Se, CdTe, organic semiconductors, metal oxide semiconductors and related alloys or hybrid combinations of the aforementioned materials. While a wide range of fabricated electronic/optoelectronic devices, circuits, and systems could be manufactured using the embodied technology, a hemispherical image sensor is an exemplary advantageous optoelectronic device that is enabled by this technology. Other applications include but are not limited to wearable electronics, flexible devices for the internet-of-things, and advanced imaging systems.

According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

Structures including an optical component and methods of forming a structure including an optical component. The structure includes an optical component on a substrate, and a back-end-of-line stack including multiple metal levels. Each of the metal levels includes a dielectric layer and metal features positioned over the optical component as metal fill in the dielectric layer. The metal features in at least two of the metal levels are arranged to overlap such that the optical component is fully covered normal to the substrate.

An optical sensor includes a semiconductor substrate having a first conductive type. The optical sensor further includes a photodiode disposed on the semiconductor substrate and a metal layer. The photodiode includes a first semiconductor layer having the first conductive type and a second semiconductor layer, formed on the first semiconductor layer, including a plurality of cathodes having a second conductive type. The first semiconductor layer is configured to collect photocurrent upon reception of incident light. The cathodes are configured to be electrically connected to the first semiconductor layer and the second semiconductor layer is configured to, based on the collected photocurrent, to track the incident light. The metal layer further includes a pinhole configured to collimate the incident light, and the plurality of cathodes form a rotational symmetry of order n with respect to an axis of the pinhole.

The present invention relates to a method of making a light converting optical system. The method involves providing a first optical layer having a microstructured front surface comprising an array of linear grooves that reflect first light rays using total internal reflection and deflect second light rays using refraction. A thin sheet of reflective light scattering material is positioned parallel to the first optical layer. A second optical layer is provided with a microstructured front surface. A continuous photoabsorptive film layer comprising a light converting semiconductor material is positioned between the first optical layer and the reflective material, with a thickness less than the minimum thickness required for absorbing all light traversing through the film layer. The method further involves providing a light source and positioning the second optical layer on the light path between the light source and the photoabsorptive film layer.

Provided are a light-receiving element which has more capability of detecting wavelengths than that of existing silicon light-receiving elements and a unit pixel of an image sensor by using it. The light-receiving element includes: a light-receiving unit which is floated or connected to external voltage and absorbs light; an oxide film which is formed to come in contact with a side of the light-receiving unit; a source and a drain which stand off the light-receiving unit with the oxide film in between and face each other; a channel which is formed between the source and the drain and forms an electric current between the source and the drain; and a wavelength expanding layer which is formed in at least one among the light-receiving unit, the oxide film and the channel and forms a plurality of local energy levels by using strained silicon.

An imaging device includes a semiconductor substrate including a first surface receiving light from outside, and a second surface opposite to the first surface, a first transistor on the second surface, and a photoelectric converter facing the second surface and receiving light through the semiconductor substrate. The semiconductor substrate is a silicon or silicon compound substrate. The photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer located between the first and second electrodes and containing a material absorbing light having a wavelength 1.1 μm or longer. The first electrode is located between the second surface and the photoelectric conversion layer. A spectral sensitivity of the material in a region of 1.0 μm or longer and shorter than 1.1 μm is 0% to 5% of the maximum value of a spectral sensitivity of the material in 1.1 μm or longer.