An infrared photodiode includes a first electrode including a reflective layer, a second electrode facing the first electrode, and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes an infrared absorbing material. A maximum absorption wavelength of the infrared absorbing material in a solution state is greater than about 700 nm and less than or equal to about 950 nm. The infrared photodiode is configured to exhibit an external quantum efficiency (EQE) spectrum in a wavelength region of greater than or equal to about 1000 nm.

A semiconductor device package includes a substrate, a first encapsulant and a second encapsulant. The substrate has an optical region and a surface-mount technology (SMT) device region. The first encapsulant includes a first portion disposed on the optical region and covers the optical region and a second portion disposed on the SMT device region and covers the SMT device region. The second encapsulant is disposed on the substrate and covers at least a portion of the second portion of the first encapsulant and a portion of the first portion of the first encapsulant.

A semiconductor device package includes a substrate, a first encapsulant and a second encapsulant. The substrate has an optical region and a surface-mount technology (SMT) device region. The first encapsulant includes a first portion disposed on the optical region and covers the optical region and a second portion disposed on the SMT device region and covers the SMT device region. The second encapsulant is disposed on the substrate and covers at least a portion of the second portion of the first encapsulant and a portion of the first portion of the first encapsulant.

Provided is a composition which has excellent temporal stability and excellent spectral characteristics, and with which a film with suppressed defects can be formed. The composition includes a coloring agent represented by Formula (1) and a curable compound, in which R.sup.1 to R.sup.4 each independently represent a substituent, R.sup.5 represents an aliphatic hydrocarbon group, R.sup.11 to R.sup.15 each independently represent a hydrogen atom or a substituent, and Y.sup.1 and Y.sup.2 each independently represent a hydrogen atom or a substituent. However, at least one of R.sup.11, R.sup.12, R.sup.13, or R.sup.14 is a substituent or each of R.sup.11 to R.sup.15 is a hydrogen atom.

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An optical semiconductor device with cascade vias is disclosed. The semiconductor device a logic die having a core circuit area and a logic peripheral circuit area; a memory die positioned on the logic die and having a memory cell area and a memory peripheral area; a first inter-die via positioned in the memory peripheral area; a landing pad positioned on the first inter-die via; and a sensor die positioned on the memory die and including a sensor pixel area and a sensor peripheral area, a first intra-die via positioned in the sensor peripheral area. The first inter-die via and the first intra-die via are electrically coupled through the landing pad in a cascade manner.

A structure includes: a near infrared transmitting filter that shields light in a visible range and allows transmission of at least a part of light in a near infrared range; and a member that is provided on an optical path of the near infrared transmitting filter on at least one of an incidence side into the near infrared transmitting filter or an emission side from the near infrared transmitting filter, allows transmission of light in a near infrared range, and has a refractive index of 1.7 or higher for the light in the near infrared range.

A structure includes: a near infrared transmitting filter that shields light in a visible range and allows transmission of at least a part of light in a near infrared range; and a member that is provided on an optical path of the near infrared transmitting filter on at least one of an incidence side into the near infrared transmitting filter or an emission side from the near infrared transmitting filter, allows transmission of light in a near infrared range, and has a refractive index of 1.7 or higher for the light in the near infrared range.

A light sensor includes a semiconductor substrate supporting a number of pixels. Each pixel includes a photoconversion zone extending in the substrate between a front face and a back face of the substrate. An optical diffraction grating is arranged over the back face of the substrate at a position facing the photoconversion zone of the pixel. For at least two different pixels of the light sensor, the optical diffraction gratings have different pitches. Additionally, the optical grating of each pixel is surrounded by an opaque wall configured to absorb at operating wavelengths of the sensor.

Disclosed is a method for synthesizing single crystalline molybdenum disulfide via a hydrothermal process that minimizes or eliminates carbon byproducts. The method involves providing two components, including a source of molybdenum and a mineralizer solution, to an inert reaction vessel, heating one zone sufficiently to dissolve the source of molybdenum in the mineralizer solution, and heating a second zone to a lower temperature to allow thermal transport to drive the dissolved material to the second zone, and then precipitate MoS.sub.2 on a seed crystal.

A detection device includes a substrate, a light-emitter, and a light receiver. The substrate includes a first surface area and a second surface area, in which the first surface area has a first reflectance greater than a second reflectance of the second surface area. The light emitter is disposed on the first surface area, and the light receiver is disposed on the second surface area. The light receiver has a third reflectance which is substantially the same as the second reflectance of the second surface area.