An electric field drives nanocrystals dispersed in solvents to assemble into ordered three-dimensional superlattices. A first electrode and a second electrode 214 are in the vessel. The electrodes face each other. A fluid containing charged nanocrystals fills the vessel between the electrodes. The electrodes are connected to a voltage supply which produces an electrical field between the electrodes. The nanocrystals will migrate toward one of the electrodes and accumulate on the electrode producing ordered nanocrystal accumulation that will provide a superlattice thin film, isolated superlattice islands, or coalesced superlattice islands.

The present disclosure provides a photodiode based on a stannous selenide sulfide nanosheet/GaAs heterojunction and a preparation method and use thereof. The photodiode comprises a structure of the stannous selenide sulfide nanosheet/GaAs heterojunction, forming Au electrodes through thermal vapor deposition on the stannous selenide sulfide nanosheet and GaAs, respectively, and conducting an annealing treatment in a protective gas at a temperature in a range of 150-250° C. The heterojunction is formed by transferring the stannous selenide sulfide nanosheet to a GaAs window, and the GaAs window is obtained by depositing a medium layer film on GaAs and etching the medium layer through lithography and an etchant.

A touch screen panel using a thin film transistor (TFT) photodetector includes a touch panel including a plurality of unit patterns for sensing light reflected by a touch by using a TFT photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent material, and a controller configured to scan the plurality of unit patterns and read touch coordinates as a result of the scanning.

A touch screen panel using a thin film transistor (TFT) photodetector includes a touch panel including a plurality of unit patterns for sensing light reflected by a touch by using a TFT photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent material, and a controller configured to scan the plurality of unit patterns and read touch coordinates as a result of the scanning.

The present application provides a method for manufacturing a monocrystalline silicon sheet, including: cutting a monocrystalline silicon rod along a radial or an axial direction of the monocrystalline silicon rod to obtain a monocrystalline silicon substrate; etching a porous silicon structure on a top surface and a bottom surface of the monocrystalline silicon substrate by wet etching; depositing a monocrystalline silicon thin layer on the porous silicon structure by chemical vapor deposition, so that a thickness of the monocrystalline silicon thin layer reaches a predetermined value; and striping the monocrystalline silicon thin layer from the porous silicon structure to obtain the monocrystalline silicon sheet. In the present application, the production capacity of directly manufacturing a single crystal silicon wafer by a chemical vapor deposition method can be improved, and a process for manufacturing a silicon wafer is combined with the process of a diffusion emitter conventionally belonging to cell manufacturing, so that a manufacturing cost of a solar monocrystalline silicon cell is significantly reduced.

The present application provides a method for manufacturing a monocrystalline silicon sheet, including: cutting a monocrystalline silicon rod along a radial or an axial direction of the monocrystalline silicon rod to obtain a monocrystalline silicon substrate; etching a porous silicon structure on a top surface and a bottom surface of the monocrystalline silicon substrate by wet etching; depositing a monocrystalline silicon thin layer on the porous silicon structure by chemical vapor deposition, so that a thickness of the monocrystalline silicon thin layer reaches a predetermined value; and striping the monocrystalline silicon thin layer from the porous silicon structure to obtain the monocrystalline silicon sheet. In the present application, the production capacity of directly manufacturing a single crystal silicon wafer by a chemical vapor deposition method can be improved, and a process for manufacturing a silicon wafer is combined with the process of a diffusion emitter conventionally belonging to cell manufacturing, so that a manufacturing cost of a solar monocrystalline silicon cell is significantly reduced.

A radiation detector includes a halide semiconductor sandwiched a cathode and an anode and a buffer layer between the halide semiconductor and the anode. The anode comprises a composition selected from: (a) an electrically conducting inorganic-oxide composition, (b) an electrically conducting organic composition, and (c) an organic-inorganic hybrid composition. The buffer layer comprises a composition selected from: (a) a composition distinct from the composition of the anode and including at least one other electrically conducting inorganic-oxide composition, electrically conducting organic composition, or organic-inorganic hybrid composition; (b) a semi-insulating layer selected from: (i) a polymer-based composition; (ii) a perovskite-based composition; (iii) an oxide-semiconductor composition; (iv) a polycrystalline halide semiconductor; (v) a carbide, nitride, phosphide, or sulfide semiconductor; and (vi) a group II-VI or III-V semiconductor; and (c) a component metal of the halide-semiconductor.

A radiation detector includes a halide semiconductor sandwiched a cathode and an anode and a buffer layer between the halide semiconductor and the anode. The anode comprises a composition selected from: (a) an electrically conducting inorganic-oxide composition, (b) an electrically conducting organic composition, and (c) an organic-inorganic hybrid composition. The buffer layer comprises a composition selected from: (a) a composition distinct from the composition of the anode and including at least one other electrically conducting inorganic-oxide composition, electrically conducting organic composition, or organic-inorganic hybrid composition; (b) a semi-insulating layer selected from: (i) a polymer-based composition; (ii) a perovskite-based composition; (iii) an oxide-semiconductor composition; (iv) a polycrystalline halide semiconductor; (v) a carbide, nitride, phosphide, or sulfide semiconductor; and (vi) a group II-VI or III-V semiconductor; and (c) a component metal of the halide-semiconductor.

Systems and methods for imaging in the short wave infrared (SWIR), photodetectors with low dark current and associated circuits for reducing dark currents and methods for generating image information based on data of a photodetector array. A SWIR imaging system may include a pulsed illumination source operative to emit radiation pulses in the SWIR band towards a target resulting in reflected radiation from the target; (b) an imaging receiver including a plurality of Ge PDs operative to detect the reflected SWIR radiation and a controller, operative to control activation of the receiver for an integration time during which the accumulated dark current noise does not exceed the time independent readout noise.

Systems and methods for imaging in the short wave infrared (SWIR), photodetectors with low dark current and associated circuits for reducing dark currents and methods for generating image information based on data of a photodetector array. A SWIR imaging system may include a pulsed illumination source operative to emit radiation pulses in the SWIR band towards a target resulting in reflected radiation from the target; (b) an imaging receiver including a plurality of Ge PDs operative to detect the reflected SWIR radiation and a controller, operative to control activation of the receiver for an integration time during which the accumulated dark current noise does not exceed the time independent readout noise.