A photoelectric conversion element for detecting the spot size of incident light, including a photoelectric conversion substrate provided with two main surfaces, and multiple first sensitivity sections and second sensitivity sections arranged in a prescribed direction. When sensitivity regions on the respective main surfaces of the multiple first sensitivity sections are defined as first sensitivity regions, and sensitivity regions that appear on the main surfaces of the second sensitivity sections are defined as second sensitivity regions, each of the first sensitivity regions receives at least a part of light incident on the main surfaces, and has a pattern in which, in accordance with enlargement of an irradiation region irradiated with incident light on the main surface, the proportion of the first sensitivity regions in the irradiation region with respect to the first sensitivity regions other than those in the irradiation region and the second sensitivity regions is decreased.

A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein the upper first solar subcell covers less than the entire upper surface of the second solar subcell, leaving an exposed portion of the second solar subcell around the periphery of the multijunction solar sell that lies in the path of the incoming light beam.

An electronic device includes a solar cell, a first light modulating layer, a transmittance-adjustable lens and a control circuit. At least a portion of the first light modulating layer is disposed on the solar cell. The control circuit is electrically connected to the solar cell and the transmittance-adjustable lens.

An electronic device includes a solar cell, a first light modulating layer, a transmittance-adjustable lens and a control circuit. At least a portion of the first light modulating layer is disposed on the solar cell. The control circuit is electrically connected to the solar cell and the transmittance-adjustable lens.

A powered device of a power-over-fiber system includes a plurality of photoelectric conversion elements that convert feed light into electric power. The powered device further includes a beam splitter that receives the feed light, splits the feed light by wavelength into a plurality of feed light in a plurality of wavelength bands, and outputs the plurality of feed light in the plurality of wavelength bands to the plurality of photoelectric conversion elements in a distributed manner. Each of the plurality of photoelectric conversion elements has a conversion wavelength range corresponding to a respective one of the plurality of feed light input and is configured to convert the respective one of the plurality of feed light input into electric power.

A hybrid-integrated series/parallel-connected photovoltaic diode array employs 10s-to-100s of single-wavelength III-V compound semiconductor photodiodes in an array bonded onto a transparent optical plate through which the array is illuminated by monochromatic light. The power-by-light system receiver enables high-voltage, up to 1000s of volts, optical transmission of power to remote electrical systems in harsh environments.

A hybrid-integrated series/parallel-connected photovoltaic diode array employs 10s-to-100s of single-wavelength III-V compound semiconductor photodiodes in an array bonded onto a transparent optical plate through which the array is illuminated by monochromatic light. The power-by-light system receiver enables high-voltage, up to 1000s of volts, optical transmission of power to remote electrical systems in harsh environments.

An assembly for optical to electrical power conversion including a photodiode assembly having a substrate layer and an internal side, an antireflective layer, a heterojunction buffer layer adjacent the internal side; an active area positioned adjacent the heterojunction buffer layer, a plurality of n+ electrode regions and p+ electrode regions positioned adjacent the active area, and back-contacts configured to align with the n+ and p+ electrode regions. The active area converts photons from incoming light into liberated electron hole pairs. The heterojunction buffer layer prevents electrons and holes of the liberated electron hole pairs from moving toward the substrate layer. The plurality of electrode regions are configured in an alternating pattern with gaps between each n+ and p+ electrode region. The electrode regions receive and generate electrical current from migration of the electrons and the holes, provide electrical pathways for the electrical current, and provide thermal pathways to dissipate heat.

A visibly transparent planar structure using a CPA scheme to boost the absorption of a multi-layer thin-film configuration, requiring no surface patterning, to overcome the intrinsic absorption limitation of the absorbing material. This is achieved in a multi-layer absorbing Fabry-Perot (FP) cavity, namely a thin-film amorphous silicon solar cell. Omni-resonance is achieved across a bandwidth of 80 nm in the near-infrared (NIR), thus increasing the effective absorption of the material, without modifying the material itself, enhancing it beyond its intrinsic absorption over a considerable spectral range. The apparatus achieved an increased external quantum efficiency (EQE) of 90% of the photocurrent generated in the 80 nm NIR region from 660 to 740 nm as compared to a bare solar cell. over the spectral range of interest.

A visibly transparent planar structure using a CPA scheme to boost the absorption of a multi-layer thin-film configuration, requiring no surface patterning, to overcome the intrinsic absorption limitation of the absorbing material. This is achieved in a multi-layer absorbing Fabry-Perot (FP) cavity, namely a thin-film amorphous silicon solar cell. Omni-resonance is achieved across a bandwidth of 80 nm in the near-infrared (NIR), thus increasing the effective absorption of the material, without modifying the material itself, enhancing it beyond its intrinsic absorption over a considerable spectral range. The apparatus achieved an increased external quantum efficiency (EQE) of 90% of the photocurrent generated in the 80 nm NIR region from 660 to 740 nm as compared to a bare solar cell. over the spectral range of interest.