A radiation imaging apparatus comprises a radiation sensor configured to convert incident radiation to an electrical signal and a housing configured to encompass the radiation sensor, wherein a holding portion that is shaped as a recess is formed in a back face of the housing, the back face being on a side opposite to a radiation incident surface of the housing, and a member having a lower heat conductivity than a heat conductivity of the back face is arranged at a position corresponding to the holding portion in the back face.

Disclosed is a radiation detector including a thallium bromide crystal, and a first electrode and a second electrode facing each other with the thallium bromide crystal interposed therebetween. The thallium bromide crystal contains 0.0194% to 6.5% by mass of chlorine atoms based on a mass of the thallium bromide crystal.

A pixel structure of flat panel detection device, a flat panel detection device, and a camera system. The pixel structure of the flat panel detection device includes a photodiode configured to collect optical signals and convert the optical signals into electrical signals, the photodiode includes a positive terminal and a negative terminal, the negative terminal is connected to a bias voltage signal terminal; a signal amplification circuit, a signal input terminal of the signal amplification circuit is connected to the negative terminal of the photodiode, a signal output terminal of the signal amplification circuit is connected to a first node; a first switching transistor, a control electrode of the first switching transistor is connected to a scanning signal line, a first terminal of the first switching transistor is connected to a data signal line, and a second terminal of the first switching transistor is connected to the first node.

Solid-state radiation detectors utilizing a film as an alpha detection layer are provided. The detector can include a neutron conversion layer disposed thereon to enable neutron detection. The film can detect alpha particles from the ambient environment or emitted by the neutron conversion layer (if present) so the device can detect alpha particles and/or neutrons. The film can generate electron-hole pairs and can be disposed near a semiconductor material. The film can have a thickness of, for example, at least 100 nanometers.

Methods and devices for detecting incident radiation, such as incident X-rays or gamma-rays, are provided. The methods and devices use single-crystalline mercury chalcoiodide compounds having the formula Hg.sub.3Q.sub.2I.sub.2, where Q represents a chalcogen atom or a combination of chalcogen atoms, as photoelectric materials. Also provided are methods for growing single-crystals of the mercury chalcoiodide compounds using external organic chemical transport agents.

Methods and devices for detecting incident radiation are provided. The methods and devices use high quality single-crystals of photoactive semiconductor compounds in combination with metal anodes and metal cathodes that provide for enhanced photodetector performance.

A radiation particle strike detection system is disclosed. The radiation particle strike detection system includes a radiation particle detector and a controller coupled to the radiation particle detector. The radiation particle detector is overlayed on at least one surface of a payload that is sensitive to interaction with radiation particles. The radiation particle detector is configured to undergo a change in state responsive to a radiation particle strike at a location on the radiation particle detector. The controller is configured to 1) monitor a state of the radiation particle detector; 2) detect a radiation particle strike on the radiation particle detector based on a change in state of the radiation particle detector; and 3) determine a location and time of the radiation particle strike on the radiation particle detector based on the change in state of the particle detector.

An electrical device includes at least one graphene quantum capacitance varactor. In some examples, the graphene quantum capacitance varactor includes an insulator layer, a graphene layer disposed on the insulator layer, a dielectric layer disposed on the graphene layer, a gate electrode formed on the dielectric layer, and at least one contact electrode disposed on the graphene layer and making electrical contact with the graphene layer. In other examples, the graphene quantum capacitance varactor includes an insulator layer, a gate electrode recessed in the insulator layer, a dielectric layer formed on the gate electrode, a graphene layer formed on the dielectric layer, wherein the graphene layer comprises an exposed surface opposite the dielectric layer, and at least one contact electrode formed on the graphene layer and making electrical contact with the graphene layer.

An X-ray system includes an X-ray generation unit configured to generate X-rays; an X-ray detection unit including at least one X-ray sensor that includes an indirect bandgap, perovskite semiconductor material, the X-ray sensor being configured to record the X-rays; and a control unit that controls a generation of the X-rays and a detection of the X-rays at the X-ray detection unit.

Methods and devices for detecting incident radiation are provided. The methods and devices use high quality single-crystals of photoactive semiconductor compounds in combination with metal anodes and metal cathodes that provide for enhanced photodetector performance.