The present disclosure provides a photosensitive device, including: a photosensitive layer (1) formed by stacking a plurality of fillers, each of the fillers being a uniformly distributed nanopore structure, the nanopore structure being filled with gaseous selenium; a first electrode (2) provided on a light incident side of the photosensitive layer (1); and a second electrode (3) provided on a light exit side of the photosensitive layer (1). The present disclosure further provides an X-ray detector and a display device.

Disclosed herein is a radiation detector configured to absorb radiation particles incident on a semiconductor single crystal of the radiation detector and to generate positive charge carriers and negative charge carriers in the semiconductor single crystal. The semiconductor single crystal may be a cadmium zinc telluride (CdZnTe) single crystal or a cadmium telluride (CdTe) single crystal. The radiation detector comprises a first electrical contact in electrical contact with the semiconductor single crystal and a second electrical contact surrounding the first electrical contact or the semiconductor single crystal. The first electrical contact is configured to collect the negative charge carriers. The second electrical contact is configured to cause the positive charge carriers to drift out of the semiconductor single crystal.

A device and process in which a single continuous depositional layer of a polycrystalline photoactive material is deposited on an integrated charge storage, amplification, and readout circuit with an irregular surface wherein the polycrystalline photoactive material is comprised of a II-VI semiconductor compound or alloys of II-VI compounds.

A detection panel, a manufacturing method thereof, and a detection device are provided. The detection panel includes base substrate; a detection circuit on the base substrate; a photoelectric conversion structure on the detection circuit and electrically connected to the detection circuit; and a bias voltage layer on the photoelectric conversion structure and electrically connected to the photoelectric conversion structure; wherein the bias voltage layer has a grid-like structure.

Disclosed are a thin-film transistor array substrate for a high-resolution digital X-ray detector and a high-resolution digital X-ray detector including the same in which a photo-sensitivity is improved by increasing a fill factor, and interference between PIN diodes is minimized, and step coverage of the PIN diode is improved to improve stability of the PIN diode. To those ends, an area of the PIN diode is maximized, and a pixel electrode of the PIN diode is disposed inside the PIN layer. Further, a clad layer made of inorganic material is formed in an edge region and/or a contact hole region of the pixel electrode. Thus, a leakage current resulting from concentrating an electric field on a curved region may be minimized.

Disclosed is a header for a radiation detector assembly provided for mounting a detector head into an enclosure formed by the header and a detector can to form the radiation detector assembly. The detector head includes a semiconductor radiation detector arranged on a first side of a substrate and a thermoelectric cooler, TEC, arranged on a second side of the substrate, the header including: a base plate having a first side for mounting the TEC and a second side with an attachment mechanism for attaching the radiation detector assembly to a radiation-detecting appliance; contact pins that provide electrical coupling through the base plate protruding from the first side of the base plate to substantially define a rim for accommodating the TEC within the rim; and a draining outlet with an opening through the base plate between its first and second sides transferring a gas to and/or from the enclosure.

This invention relates to a method to manufacture a chip to detect the direct conversion of X-rays. It also relates to a direct conversion detector for X-rays using such a chip and dental radiology equipment using at least one such detector. The method to manufacture the wafer comprises a step for applying pressure (3, 4, 4 a) to a powdered polycrystalline semiconductor material and a step for heating (5-9) during a set time period. It comprises a preliminary step for providing an impurity level of at least 0.2% in the polycrystalline semiconductor material.

The present embodiment relates to a radiation detector having a structure enabling suppression of polarization in a thallium bromide crystalline body and suppression of corrosion of an electrode in the air. The radiation detector comprises a first electrode, a second electrode, and a thallium bromide crystalline body provided between the first and second electrodes. One of the first and the second electrodes includes an alloy layer and a low-resistance metal layer provide on the alloy layer. The alloy layer is comprised of an alloy of metallic thallium and another metal different from the metallic thallium. The low-resistance metal layer has a resistance value lower than a resistance value of the alloy layer and is electrically connected to a pad on a readout circuit while the radiation detector is mounted on the readout circuit.

Disclosed is a liquid crystal X-ray detector in which only one substrate is used to make a liquid crystal unit by forming one of two alignment films for holding a liquid crystal layer therebetween on a selenium layer. Further disclosed is a method of manufacturing the same. The liquid crystal X-ray detector includes a photoconductor unit and a liquid crystal unit provided on the photoconductor unit. The photoconductor unit includes a first substrate, a selenium layer formed on the first substrate, and a first alignment film formed on the selenium layer. The first alignment film is formed of parylene deposited at a temperature lower than 45 C. in a vacuum atmosphere. The liquid crystal unit includes a second substrate, a second alignment film formed on the second substrate and opposed to the first alignment film, and a liquid crystal layer provided between the first alignment film and the second alignment film.

A semiconductor radiation monitor (i.e., dosimeter) is provided that has an oxide charge storage region located on a first side of a semiconductor fin and a functional gate structure located on a second side of the semiconductor fin that is opposite the first side. Charges are created in the oxide charge storage region that is located on the first side of the semiconductor fin and detected on the second side of the semiconductor fin by the functional gate structure. Multiple semiconductor fins in parallel can form a dense and very sensitive semiconductor radiation monitor.