Provided is a light detecting device including a light input device configured to receive light, a plurality of waveguides extending from the light input device, the plurality of waveguides being configured to transmit portions of the light received by the light input device, respectively, a plurality of modulators provided on the plurality of waveguides and configured to modulate phases of the portions of light transmitted in the plurality of waveguides, respectively, at least one graphene layer configured to absorb the portions of light transmitted in the plurality of waveguides, and at least one first electrode and at least one second electrode electrically connected to the at least one graphene layer, respectively.

Provided are a method for preparing a high-performance wafer-level lead sulfide near infrared photosensitive thin film. Firstly, a surface of the selected substrate material is cleaned; next, a vaporized oxidant is introduced into a vacuum evaporation chamber under a high background vacuum degree, and a PbS thin film is deposited on the clean substrate surface to obtain a microstructure with medium particle, loose structure and consistent orientation. Finally, under a given temperature and pressure, a high-performance wafer-level PbS photosensitive thin film is obtained by sensitizing the film prepared at step S2 using iodine vapor carried by a carrier gas. This preparation method is simple, low-cost and repeatable. The PbS photosensitive thin film has a high photoelectric detection rate. The 600K blackbody room temperature peak detection rate is >8×1010 Jones. The corresponding non-uniformity in a wafer-level photosensitive surface is <5%, satisfying the requirements of preparation of a PbS Mega-pixel-level array imaging system.

The present disclosure provides for process and temperature compensation in a transimpedance amplifier (TIA) using a dual replica via monitoring an output of a first TIA (transimpedance amplifier) and a second TIA; configuring a first gain level of the first TIA based on a feedback resistance and a reference current applied at an input to the first TIA; configuring a second gain level of the second TIA and a third TIA based on a control voltage; and amplifying a received electrical current to generate an output voltage using the third TIA according to the second gain level. In some embodiments, one or both of the second TIA and the third TIA include a configurable feedback impedance used in compensating for changes in the second gain level due to a temperature of the respective second or third TIA via the configurable feedback impedance of the respective second or third TIA.

The present disclosure provides for process and temperature compensation in a transimpedance amplifier (TIA) using a dual replica via monitoring an output of a first TIA (transimpedance amplifier) and a second TIA; configuring a first gain level of the first TIA based on a feedback resistance and a reference current applied at an input to the first TIA; configuring a second gain level of the second TIA and a third TIA based on a control voltage; and amplifying a received electrical current to generate an output voltage using the third TIA according to the second gain level. In some embodiments, one or both of the second TIA and the third TIA include a configurable feedback impedance used in compensating for changes in the second gain level due to a temperature of the respective second or third TIA via the configurable feedback impedance of the respective second or third TIA.

Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

An optically controlled switch includes a substrate integrated waveguide (SIW) including: a first port and a second port, the first port and the second port being located at ends of the SIW to input and output an electromagnetic wave; and a shorting via electrically connected to a bottom layer of the SIW and separated from a top layer of the SIW by a dielectric gap. The optically controlled switch includes: a photoconductive element located on the top layer of the SIW and electrically connected to the shorting via and the top layer of the SIW, the photoconductive element being configured to have a dielectric state and a conductor state depending on a state of a controlling light flux; and a cutoff waveguide formed around the dielectric gap and the photoconductive element, and configured to provide control of the photoconductive element from a light source and block parasitic radiation.

An optical transformer includes a plurality of light emitters, a plurality of photovoltaic cells positioned to receive light from at least a first subset of the plurality of light emitters, the plurality of photovoltaic cells including at least a first photovoltaic cell and a second photovoltaic cell, and one or more optically triggered switches positioned to receive light from at least a second subset of the plurality of light emitters, the one or more optically triggered switches including at least a first optically triggered switch electrically coupled to the first photovoltaic cell and the second photovoltaic cell. A method of operating the optical transformer is also described.

A coffee machine for wirelessly driving a coffee cup holder to rotate comprises a machine body and a cup holder; the cup holder comprises a base, a cup holder and a driving motor, wherein the base is internally provided with a driving motor, and the output shaft of the driving motor is sleeved with the cup holder; the upper part of the machine body is provided with a support, the support is provided with a sprinkler head, the sprinkler head is provided above the cup holder, and the height difference between the sprinkler head and the cup holder is capable of accommodating a coffee cup in which a coffee filter cup is placed; the machine body is provided with a charging coil, the cup holder is provided with a power receiving coil, and the installation position of the power receiving coil corresponds to that of the charging coil.

Embodiments disclosed herein facilitates the monitoring of direct ultraviolet B (UVB) radiation exposure by a person via a system having a sensor (such as Lanthanum doped lead zirconate titanate (PLZT) thin-film sensors or other ferroelectric-based sensors) sensitive to UVB radiation. The system beneficially provides current real-time dosage information associated with Vitamin D production by the person as well as real-time indication of safe exposure and/or harmful exposure to current UVB radiation conditions while also, in some embodiments, takes into consideration a person's age, skin type and sensitivity, body surface area exposed.