An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

An imaging device includes a photoelectric conversion unit in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked. A semiconductor material layer including an inorganic oxide semiconductor material having an amorphous structure at least in a portion is formed between the first electrode and the photoelectric conversion layer, and the formation energy of an inorganic oxide semiconductor material that has the same composition as the inorganic oxide semiconductor material having an amorphous structure and has a crystalline structure has a positive value.

A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

An imaging element has at least a photoelectric conversion section, a first transistor TR.sub.1, and a second transistor TR.sub.2, the photoelectric conversion section includes a photoelectric conversion layer 13, a first electrode 11, and a second electrode 12, the imaging element further has a first photoelectric conversion layer extension section 13A, a third electrode 51, and a fourth electrode 51C, the first transistor TR.sub.1 includes the second electrode 12 that functions as one source/drain section, the third electrode that functions as a gate section 51, and the first photoelectric conversion layer extension section 13A that functions as the other source/drain section, and the first transistor TR.sub.1 (TR.sub.rst) is provided adjacent to the photoelectric conversion section.

In an an optical semiconductor array (1A) having a semiconductor substrate (10) and a plurality of mesa-shaped optical semiconductor elements (11a to 11d) separated by grooves (12a,12b) on the semiconductor substrate (10), each of the plurality of optical semiconductor elements (11a to 11d) comprises a semiconductor laminated part (20) including a first semiconductor layer (20a) in contact with the semiconductor substrate (10), and a connecting hole (21a) formed at a portion separated from the groove (12a,12b) in the semiconductor laminated part (20) so as to extend from a surface of the semiconductor laminated part (20) to the first semiconductor layer (20a).

A bonded semiconductor light-receiving device including an epitaxial layer to serve as a device-functional layer, and a support substrate made of a material different from that of the device-functional layer and bonded to the epitaxial layer via a bonding material layer. The device-functional layer has a bonding surface with an uneven pattern formed thereon.

The present technology relates to a solid-state imaging device and electronic equipment to suppress degradation of Dark characteristics. A photoelectric converting unit configured to perform photoelectric conversion, and a PN junction region including a P-type region and an N-type region on a side of a light incident surface of the photoelectric converting unit are included. Further, on a vertical cross-section, the PN junction region is formed at three sides including a side of the light incident surface among four sides enclosing the photoelectric converting unit. Further, a trench which penetrates through a semiconductor substrate in a depth direction and which is formed between the photoelectric converting units each formed at adjacent pixels is included, and the PN junction region is also provided on a side wall of the trench. The present technology can be applied, for example, to a backside irradiation type CMOS image sensor.