There are provided a solid-state imaging device capable of improving quantum efficiency while suppressing occurrence of color mixture, and a method of manufacturing such a solid-state imaging device. According to the present disclosure, a solid-state imaging device (100, 100a, 100b, 100c) is provided. The solid-state imaging device (100, 100a, 100b, 100c) includes a first region (4, 4a, 4b) and a second region (5, 5a) in a light receiving surface of an imaging pixel (1, 1a, 1b, 1c). The first region (4, 4a, 4b) is provided with unevenness. The second region (5, 5a) is provided with unevenness having a pitch narrower than that of the unevenness in the first region (4, 4a, 4b).

There are provided a solid-state imaging device capable of improving quantum efficiency while suppressing occurrence of color mixture, and a method of manufacturing such a solid-state imaging device. According to the present disclosure, a solid-state imaging device (100, 100a, 100b, 100c) is provided. The solid-state imaging device (100, 100a, 100b, 100c) includes a first region (4, 4a, 4b) and a second region (5, 5a) in a light receiving surface of an imaging pixel (1, 1a, 1b, 1c). The first region (4, 4a, 4b) is provided with unevenness. The second region (5, 5a) is provided with unevenness having a pitch narrower than that of the unevenness in the first region (4, 4a, 4b).

A fluorinated polymer suitable for deposition and capable of favorable metal patterning, is provided. A resin film containing such a fluorinated polymer as a material is provided. Further, a photoelectronic element having such a resin film in its structure is provided.

A fluorinated polymer which satisfies the following requirements (1) to (3): (1) the melting point is less than 200° C., or no melting point is observed, (2) the thermogravimetric loss rate when the temperature is increased at a temperature-increasing rate of 2° C./min under a pressure of 1×10.sup.−3 Pa, substantially reaches 100% at 400° C. or lower, (3) when the temperature is increased at a temperature-increasing rate of 2° C./min under a pressure of 1×10.sup.−3 Pa, the temperature width from a temperature at which the thermogravimetric loss rate is 10% to a temperature at which it is 90%, is within 200° C.

A germanium based avalanche photo-diode device and method of manufacture thereof. The device including: a silicon substrate; a lower doped silicon region, positioned above the substrate; a silicon multiplication region, positioned above the lower doped silicon region; an intermediate doped silicon region, positioned above the silicon multiplication region; an un-doped germanium absorption region, position above the intermediate doped silicon region; an upper doped germanium region, positioned above the un-doped germanium absorption region; and an input silicon waveguide; wherein: the un-doped germanium absorption region and the upper doped germanium region form a germanium waveguide which is coupled to the input waveguide, and the device also includes a first electrode and a second electrode, and the first electrode extends laterally to contact the lower doped silicon region and the second electrode extends laterally to contact the upper doped germanium region.

The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving sensitivity while suppressing deterioration of color mixing. The solid-state imaging device includes a substrate, a first photoelectric conversion region in the substrate, a second photoelectric conversion region in the substrate, a trench between the first photoelectric conversion region and the second photoelectric conversion region and penetrates through the substrate, a first concave portion region that has a plurality of concave portions provided on a light receiving surface side of the substrate, above the first photoelectric conversion regions, and a second concave portion region that has a plurality of concave portions provided on the light receiving surface side of the substrate, above the second photoelectric conversion region. The technology of the present disclosure can be applied to, for example, a backside illumination solid-state imaging device and the like.

The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving sensitivity while suppressing deterioration of color mixing. The solid-state imaging device includes a substrate, a first photoelectric conversion region in the substrate, a second photoelectric conversion region in the substrate, a trench between the first photoelectric conversion region and the second photoelectric conversion region and penetrates through the substrate, a first concave portion region that has a plurality of concave portions provided on a light receiving surface side of the substrate, above the first photoelectric conversion regions, and a second concave portion region that has a plurality of concave portions provided on the light receiving surface side of the substrate, above the second photoelectric conversion region. The technology of the present disclosure can be applied to, for example, a backside illumination solid-state imaging device and the like.

Provided is a method of producing a semiconductor optical device that makes it possible to improve the optical device properties of the semiconductor optical device including semiconductor layers containing at least In, As, and Sb. The method has a first step of forming an etching stop layer on an InAs growth substrate; a second step of forming a semiconductor laminate; a third step of forming a distribution portion; a fourth step of bonding the semiconductor laminate and the distribution portion to a support substrate with a metal bonding layer therebetween; and a fifth step of removing the InAs growth substrate.

A photoelectric conversion device includes a photoelectric conversion region, a readout circuit, and a counting circuit. The photoelectric conversion region is configured to generate a signal charge. The readout circuit is configured to, when reading out a signal that is based on the signal charge generated at the photoelectric conversion region, selectively perform first readout for reading out the signal using avalanche multiplication that is based on the signal charge and second readout for reading out the signal without causing avalanche multiplication to occur with respect to at least a part of the signal charge. The counting circuit is configured to count a number of occurrences of avalanche current which is caused to occur by avalanche multiplication in the first readout.

A method of manufacturing a photoelectric conversion device includes: forming a photoelectric conversion structure in which a first semiconductor layer of a first electrical conductivity type is provided on a non-light-receiving surface, on side opposite to a light-receiving surface, of a light-absorbing layer including a compound semiconductor; forming an opening by etching at least a portion of the photoelectric conversion structure, the opening that separates the photoelectric conversion structure for each pixel; and forming a pixel separator of a second electrical conductivity type on the light-absorbing layer exposed in the opening, the pixel separator extending in a thickness direction of the light-absorbing layer.

A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.