An electronic device includes: a display module including a display panel and an input sensor disposed on the display panel, the display panel having a first area including a plurality of pixels and a second area having a transmittance higher than that of the first area; a first sensor disposed below the display module, overlapping the second area, and configured to measure a first signal having biometric information of a user; a second sensor disposed to surround the first sensor, overlapping the first area, and configured to measure a second signal applied from the user; and a driving unit connected to the display module, the first sensor, and the second sensor, the driving unit configured to drive the first sensor and the second sensor together with the display module.

A monolithic QCL/APD IR Transceiver in which the QCL transmitter and APD receiver have the same N MQW stage composition and variation in thickness in the z direction for all positions in x and y directions. The heterostructure is configured via asymmetric stages, additional stages for the APD or by reversing the polarity of the p-n junction for the APD or a combination thereof such that the upper energy state in the QCL under forward bias is confined to the quantum well and in the APD under reverse bias is near the top of the quantum well in energy and localized in the quantum well to spatially overlap with the lower energy state to facilitate detection of echo photons. The QCL and APD may be positioned end-to-end, side-by-side or as a common region of the heterostructure.

An energy harvesting electro-optic display is disclosed comprising a photovoltaic cell that converts part of the incident light to electric current or voltage, wherein the electric current or voltage is used for the operation of the electro-optic display upon the conversion or stored in a storage component to be used for the operation of the display.

An energy harvesting electrophoretic display is disclosed comprising a photovoltaic cell that converts part of the incident light to electric current or voltage, wherein the electric current or voltage is used for the operation of the electrophoretic display upon the conversion or stored in a storage component to be used for the operation of the electrophoretic display.

A semiconductor device is provided, which has a wide-bandgap semiconductor element, such as a SiC element, and which includes a sensor capable of responding sufficiently to characteristic requirements for protecting and controlling the semiconductor element. The semiconductor device includes a wide-bandgap semiconductor element mounted on a substrate; and a light-receiving element that receives light emitted from the wide-bandgap semiconductor element when the wide-bandgap semiconductor element is in a conduction state.

An biological body information acquisition apparatus includes an imager including light emitting devices that are arranged in a plane and emit light toward a human body and light receiving devices that are arranged in a plane and receive light from the human body and a light guide plate that is layered on the imager on the side thereof facing the human body and has light transmissivity in the direction of a normal to the light receiving devices and the light emitting devices. The light guide has a first portion (holes) and a second portion (substrate) that are arranged in a plane and have refractive indices different from each other. The first portion (holes) is so disposed as to coincide with the light receiving devices in a plan view, and the second portion (substrate) is so disposed as to coincide with the light emitting devices in the plan view.

Two semiconductor chips are optically aligned to form a hybrid semiconductor device. Both chips have optical waveguides and alignment surface positioned at precisely-defined complementary vertical offsets from optical axes of the corresponding waveguides, so that the waveguides are vertically aligned when one of the chips is placed atop the other with their alignment surface abutting each other. The position of the at least one of the alignment surface in a layer stack of its chip is precisely defined by epitaxy. The chips are bonded at offset bonding pads with the alignment surfaces abutting in the absence of bonding material therebetween.

A semiconductor light source and driving aid system for a motor vehicle comprising a semiconductor light source. The semiconductor light source includes a plurality of electroluminescent rods of submillimetric dimensions. At least certain rods are electrically interconnected in a first assembly dedicated to an emission of a light beam at a first wavelength, and other rods are electrically interconnected in a second assembly dedicated to an emission of a light beam at a second wavelength different from the first wavelength, the first and the second assemblies forming two selectively activable emission areas.

A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 Å and smaller than 1000 Å.

A device includes a semiconductor chip, and a semiconductor chip package in which the semiconductor chip is packaged. The semiconductor chip has a first major surface opposite a second major surface, and a set of four edges extending between the first major surface and the second major surface. The semiconductor chip package includes at least first and second electrodes exposed to an exterior of the semiconductor chip package and positioned apart from the semiconductor chip. The at least first and second electrodes overlap only one edge of the semiconductor chip. The semiconductor chip package also includes a filler that is molded between the semiconductor chip and each of the at least first and second electrodes.