Wafer alignment with restricted visual access has been disclosed. In an example, a method of processing a substrate for fabricating a solar cell involves supporting the substrate over a stage. The method involves forming a substantially opaque layer over the substrate. The substantially opaque layer at least partially covers edges of the substrate. The method involves performing fit-up of the substantially opaque layer to the substrate. The method involves illuminating the covered edges of the substrate with light transmitted through the stage, and capturing a first image of the covered edges of the substrate based on the light transmitted through the stage. The method further includes determining a first position of the substrate relative to the stage based on the first image of the covered edges. The substrate may be further processed based on the determined first position of the substrate under the substantially opaque layer.

Wafer alignment with restricted visual access has been disclosed. In an example, a method of processing a substrate for fabricating a solar cell involves supporting the substrate over a stage. The method involves forming a substantially opaque layer over the substrate. The substantially opaque layer at least partially covers edges of the substrate. The method involves performing fit-up of the substantially opaque layer to the substrate. The method involves illuminating the covered edges of the substrate with light transmitted through the stage, and capturing a first image of the covered edges of the substrate based on the light transmitted through the stage. The method further includes determining a first position of the substrate relative to the stage based on the first image of the covered edges. The substrate may be further processed based on the determined first position of the substrate under the substantially opaque layer.

Provided is a gas sensor that can suppress characteristic variation caused by deformation of a semiconductor substrate. The gas sensor (1) includes a substrate (redistribution layer 30), a light-emitting element (11) provided at a front surface (30a) or embedded in the substrate, a light-receiving element (12) that is provided at the front surface or embedded in the substrate and that receives light emitted from the light-emitting element, and a plurality of external connection terminals (40) at a rear surface (30b) that is an opposite surface to the front surface of the substrate. At least a portion of the plurality of external connection terminals is electrically connected to the light-emitting element and the light-receiving element. The plurality of external connection terminals is arranged such that, in plan view, the light-emitting element and the light-receiving element are not present on a line linking any two external connection terminals.

A photodetector includes a first cell for converting incident light into electric charges, the first cell including a first semiconductor layer, a second semiconductor layer and a first substrate interposing the first semiconductor layer with the second semiconductor layer; and a second cell for converting incident light into electric charges, the second cell including a third semiconductor layer, a fourth semiconductor layer, and a second substrate interposing the third semiconductor layer with the fourth semiconductor layer; wherein the second substrate is larger in thickness than the first substrate.

A light-emitting device is provided. The light-emitting device includes a first substrate. The light-emitting device also includes a second substrate including a light-shielding structure. The light-emitting device further includes a first light-emitting module and a second light-emitting module being adjacent to each other. The first light-emitting module and the second light-emitting module are disposed between the first substrate and the second substrate. The first light-emitting module and the second light-emitting module are spaced apart by a gap, and the light-shielding structure at least partially covers the gap in a top view direction of the light-emitting device.

A light-emitting device is provided. The light-emitting device includes a first substrate. The light-emitting device also includes a second substrate including a light-shielding structure. The light-emitting device further includes a first light-emitting module and a second light-emitting module being adjacent to each other. The first light-emitting module and the second light-emitting module are disposed between the first substrate and the second substrate. The first light-emitting module and the second light-emitting module are spaced apart by a gap, and the light-shielding structure at least partially covers the gap in a top view direction of the light-emitting device.

A device for detecting a chemical species including a Geiger mode avalanche photodiode, which comprises a body of semiconductor material delimited by a front surface. The semiconductor body includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends within the cathode region starting from the front surface. The detection device further includes: a dielectric region, which extends on the front surface; and a sensitive region, which is arranged on top of the dielectric region and electrically coupled to the anode region and has a resistance that depends upon the concentration of the chemical species.

Short-wave infrared (SWIR) focal plane arrays (FPAs) comprising a Si layer through which light detectable by the FPA reaches photodiodes of the FPA, at least one germanium (Ge) layer including a plurality of distinct photosensitive areas including at least one photosensitive area in each of a plurality of photosensitive photosites, each of the distinct photosensitive areas comprising a plurality of proximate steep structures of Ge having height of at least 0.5 μm and a height-to-width ratio of at least 2, and methods for forming same.

Short-wave infrared (SWIR) focal plane arrays (FPAs) comprising a Si layer through which light detectable by the FPA reaches photodiodes of the FPA, at least one germanium (Ge) layer including a plurality of distinct photosensitive areas including at least one photosensitive area in each of a plurality of photosensitive photosites, each of the distinct photosensitive areas comprising a plurality of proximate steep structures of Ge having height of at least 0.5 μm and a height-to-width ratio of at least 2, and methods for forming same.

Methods, systems, and apparatuses for generating, producing, and utilizing energy.