A fingerprint identification structure and a display panel are disclosed. display panel includes a fingerprint identification structure. The fingerprint identification structure includes a light energy switch and a thermosensitive light path adjustment structure. The light energy switch is configured to switch from an open circuit to a closed circuit under light irradiation. The thermosensitive light path adjustment structure is connected to a surface of the light energy switch, is able to transmit light internally, and is configured to adjust a light path of light to drive the light to irradiate the light energy switch when receiving a heat source.

An optical sensor device includes an optical sensor and a mounting board. The optical sensor includes a substrate, a light receiver, a light emitter, and a transparent substrate. The substrate has a first recess and a second recess at a distance from the first recess. The light receiver is located in the first recess. The light emitter is located in the second recess and at a distance from the light receiver. The transparent substrate is located on a first upper surface of the substrate, bonded to the substrate, and covers the first recess and the second recess. The optical sensor is mounted with a first lower surface being oblique to a second lower surface of the mounting board.

A semiconductor light-receiving includes: a substrate; a semiconductor light-receiving element that is provided on the substrate and has a first conductivity region and a second conductivity region; a first electrode electrically coupled to the first conductivity region; a second electrode electrically coupled to the second conductivity region; an insulating layer located on the second conductivity region; and a wiring that is located on the insulating layer and is electrically coupled to the first electrode, the wiring being elongated from the first electrode to a peripheral region of the semiconductor light-receiving element, the wiring having a region of first width and a region of second width narrower than the first width, the region of second width of the wiring being located on the second conductivity region.

A semiconductor light-receiving includes: a substrate; a semiconductor light-receiving element that is provided on the substrate and has a first conductivity region and a second conductivity region; a first electrode electrically coupled to the first conductivity region; a second electrode electrically coupled to the second conductivity region; an insulating layer located on the second conductivity region; and a wiring that is located on the insulating layer and is electrically coupled to the first electrode, the wiring being elongated from the first electrode to a peripheral region of the semiconductor light-receiving element, the wiring having a region of first width and a region of second width narrower than the first width, the region of second width of the wiring being located on the second conductivity region.

The present disclosure provides a light-emitting module and a display apparatus thereof. The light-emitting module includes a circuit substrate which includes a first surface and a second surface opposite to the first surface. The first surface includes a plurality of conductive channels, and the second surface includes a plurality of conductive pads. A plurality of light-emitting groups is arranged in a matrix on the first surface. Each of the light-emitting groups includes a red light-emitting diode chip, a green light-emitting diode chip, and a blue light-emitting diode chip. An electric component is disposed on the first surface and located in the light-emitting groups matrix. A translucent encapsulating component covers the plurality of light-emitting groups and the electric component. Wherein, the light-emitting groups matrix comprises m columns and n rows.

Devices, methods and techniques are disclosed to interrupt a fault current in a high-voltage direct-current circuit. In one example aspect, a device includes a mechanical switch including a pair of contacts configured to be positioned apart upon activation of the circuit breaker, and a photoconductive component connected in parallel with the mechanical switch. The photoconductive component is configured to establish a current upon activation of the circuit breaker. The photoconductive component comprises a crystalline material positioned to receive a pulsed light signal from a laser light source, and a pair of electrodes coupled to the crystalline material and configured to allow an electric field to be established across the crystalline material to generate the current.

A photosensitive thin film device includes a substrate that is transparent and insulative; a first electrode on the substrate; a circular semiconductor layer on the substrate and surrounding a perimeter of the first electrode; a circular second electrode on the substrate and surrounding a perimeter of the semiconductor layer; an interlayer insulating layer on the semiconductor layer and the first and second electrodes and having a first aperture exposing the first electrode; and a conductive layer including an upper surface light barrier arranged on the interlayer insulating layer and covering an upper surface of the semiconductor layer, and a contact plug extending from the upper surface light barrier and connected to the first electrode via the first aperture.

An optoelectronic device includes an emitter of light rays and a receiver of light rays. The emitter is encapsulated in a transparent block. An opaque conductive layer is applied to a top surface and a side surface of the transparent block. The receiver is mounted to the opaque conductive layer at the top surface. An electrical connection is made between the receiver and the opaque conductive layer. A conductive strip is also mounted to the side surface of the transparent block and isolated from the opaque conductive layer. A further electrical connection is made between the receiver and the conductive strip.

An optoelectronic device includes an emitter of light rays and a receiver of light rays. The emitter is encapsulated in a transparent block. An opaque conductive layer is applied to a top surface and a side surface of the transparent block. The receiver is mounted to the opaque conductive layer at the top surface. An electrical connection is made between the receiver and the opaque conductive layer. A conductive strip is also mounted to the side surface of the transparent block and isolated from the opaque conductive layer. A further electrical connection is made between the receiver and the conductive strip.

A plasmonic photoconductor sensing platform is provided. The plasmonic photoconductor sensing platform includes an insulating substrate; a semiconducting film placed on top of the insulating substrate; two metal contacts placed at least in part on the semiconducting film to enforce an electric field; a plurality of plasmonic nanostructures deposited on the semiconducting film and physically separated from metal contacts; an insulating layer, the insulating electrically isolating the plasmonic nanostructures from semiconductor; at least one energy source; and at least one microfluidic channel disposed on the insulating layer.