A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction. The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×10.sup.20 atoms/cm.sup.3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×10.sup.19 atoms/cm.sup.3 or less; ii) Providing one or more hydrogen sources accessible by each surface of the device; and iii) Heating the device, or a local region of the device to at least 40° C. while simultaneously illuminating at least some and/or advantageously all of the device with at least one light source whereby the cumulative power of all the incident photons with sufficient energy to generate electron hole pairs within the silicon (in other words photons with energy levels above the bandgap of silicon of 1.12 eV) is at least 20 mW/cm.sup.2.

A method for manufacturing a semiconductor device includes selectively forming an insulating film on a region of a substrate serving as a scribe line; and forming a first semiconductor layer in a state where a cavity is provided on the insulating film. The cavity is buried in the first semiconductor layer.

An electromagnetic radiation source designed for a light-soaking treatment of a photovoltaic cell or a photovoltaic cell precursor, the source including a plurality of first radiation emitters and a plurality of second radiation emitters, the first and second radiation emitters being arranged in a plurality of rows, each first radiation emitter being configured to emit a first electromagnetic radiation having a spectrum comprised between 300 nm and 550 nm and each second radiation emitter being configured to emit a second electromagnetic radiation having a spectrum comprised between 800 nm and 1200 nm.

According to the embodiments provided herein, a method for scribing a layer stack of a photovoltaic device can include directing a laser scribing waveform to a film side of a layer stack. The laser scribing waveform can include pulse groupings that repeat at a group repetition period of greater than or equal to 1.5 .Math.s. Each pulse of the pulse groupings can have a pulse width of less than or equal to 900 fs.

Short-wave infrared (SWIR) focal plane arrays (FPAs) comprising a Si layer through which light detectable by the FPA reaches photodiodes of the FPA, at least one germanium (Ge) layer including a plurality of distinct photosensitive areas including at least one photosensitive area in each of a plurality of photosensitive photosites, each of the distinct photosensitive areas comprising a plurality of proximate steep structures of Ge having height of at least 0.5 μm and a height-to-width ratio of at least 2, and methods for forming same.

According to a solar cell panel according to the present embodiment, a connection structure of a wiring unit for connecting a plurality of solar cells comprising first and second solar electrically connected to each other is improved. More particularly, the wiring unit comprises a first extension wiring and a second extension wiring, which correspond to each of the plurality of solar cells, the first extension wiring having a first outer portion extending outwards beyond a first side of a solar cell and a second extension wiring having a second outer portion extending outwards beyond a second side of the solar cell, the second side being opposite to the first side of the solar cell. A second extension wiring of the first solar cell and a first extension wiring of the second solar cell overlap each other to have a connection portion where they are connected to each other, and the connection portion includes an overlapping portion formed by the connection portion overlapping a portion of the first solar cell.

Disclosed herein are a radiation detector and a method of making it. The radiation detector is configured to absorb radiation particles incident on a semiconductor single crystal of the radiation detector and to generate charge carriers. The semiconductor single crystal may be a CdZnTe single crystal or a CdTe single crystal. The method may comprise forming a recess into a substrate of semiconductor; forming a semiconductor single crystal in the recess; and forming a heavily doped semiconductor region in the substrate. The semiconductor single crystal has a different composition from the substrate. The heavily doped region is in electrical contact with the semiconductor single crystal and embedded in a portion of intrinsic semiconductor of the substrate.

Example embodiments relate to controlling detection time in photodetectors. An example embodiment includes a device. The device includes a substrate. The device also includes a photodetector coupled to the substrate. The photodetector is arranged to detect light emitted from a light source that irradiates a top surface of the device. A depth of the substrate is at most 100 times a diffusion length of a minority carrier within the substrate so as to mitigate dark current arising from minority carriers photoexcited in the substrate based on the light emitted from the light source.

The present invention provides a method of hydrogenating a solar cell and a device thereof. The device includes a chamber, a moving device, and a light-beam generator. The light-beam generated by the light-beam generator has a power density between 20 W/cm2 and 200 W/cm2 and a width between 1 mm and 156 mm. The light-beam scans a solar cell with a scanning speed between 50 mm/sec and 200 mm/sec to achieve hydrogenating the solar cell. Furthermore, the device includes a heating device used to heat the solar cell.

This document describes electromagnetic radiation (EMR) transmissive polymer substrates and techniques for producing EMR transmissive polymer substrates by pre-treating polymer substrates with at least one lipid. In aspects, the EMR transmissive polymer substrates are infrared (IR) transmissive polymer substrates and the techniques described are for producing IR transmissive polymer substrates. In general, disclosed techniques include applying a coating of at least one lipid to at least one surface of a polymer substrate and then performing a heat-treatment process on the coated polymer substrate. The techniques may also include performing a cooling process on the polymer substrate after the heat-treatment process.