Patent classifications
H01L31/1884
METHOD OF PREPARING NANOWIRE NETWORKS AND NETWORKS PREPARED THEREBY
The present invention relates to methods of preparing nanowire networks, as well as to nanowire networks prepared thereby. The method comprises (a) providing a substrate coated with a film of a first polymer; (b) depositing nanofibers of a second polymer onto the film to form a patterned layer comprising a nanofibre network structure; (c) depositing a layer of a first metal onto the patterned layer; (d) performing a solvent development step to selectively remove the nanofibers leaving a negative pattern exposing the first polymer film; (e) performing an etching step to remove the exposed polymer film; (f) depositing a second metal or oxide thereof onto the negative pattern to form a tem plated nanowire network; and (g) performing a lift-off step to expose the nanowire network.
SHORT-CHAIN FLUOROSURFACTANTS WITH IODIDE ADDITIVES FOR FORMING SILVER NANOWIRE-BASED TRANSPARENT CONDUCTIVE FILMS
Disclosed herein are purified surfactant formulations including purified short-chain fluorosurfactant and iodide additive and a two-part coating kit having the same and a silver nanowire formulation.
TRANSPARENT CONDUCTOR AND PREPARATION METHOD FOR SAME
A preparation method for a transparent conductor, according to the present invention, comprises the steps of: a) preparing a laminate which has a transparent polymer layer and a conductive network sequentially laminated on a base material; and b) sinking the conductive network into the transparent polymer layer by applying energy to the laminate.
Method of manufacturing substrate with a transparent conductive film, manufacturing apparatus of substrate with transparent conductive film, substrate with transparent conductive film, and solar cell
A method of the invention which manufactures a substrate with a transparent conductive film, includes: preparing a base body that has a top surface and a back surface and has an a-Si film coating at least one of the top surface and the back surface; and setting temperatures of the base body and the a-Si film to be in the range of 70 to 220° C. in a film formation space having a processing gas containing hydrogen, applying a sputtering voltage to a target, carrying out DC sputtering, and thereby forming the a-Si film on a transparent conductive film.
Method and apparatus for enhanced photoconductivity of semiconductor
A photoconductor assembly includes a substrate formed of an undoped and single-crystal semiconductor material that is configured to absorb electromagnetic energy, a plurality of electrodes arranged normal to the substrate, and a power supply that applies a voltage to the electrodes for modulating the electromagnetic energy through the substrate.
Method for manufacturing transparent electrode film
Provided herein is a method for forming a transparent electrode film, the method comprising forming an electrode pattern by printing an electrode pattern on a release film using a metal ink composition; forming an insulating layer by applying a curable resin on the release film on which the electrode pattern has been formed; forming a substrate layer by laminating a substrate on the insulating layer; removing the release film; and forming a conductive layer by applying a conductive material on the electrode pattern from which the release film has been removed.
METHOD OF REDUCING SODIUM CONCENTRATION IN A TRANSPARENT CONDUCTIVE OXIDE LAYER OF A SEMICONDUCTOR DEVICE
A method of making a semiconductor device includes forming a semiconductor material stack having a sodium at an atomic concentration greater than 1×10.sup.19/cm.sup.3, depositing a transparent conductive oxide layer over the semiconductor material stack, such that sodium atoms diffuse from the semiconductor material stack into the transparent conductive oxide layer, and contacting a physically exposed surface of the transparent conductive oxide layer with a fluid to remove sodium from the transparent conductive oxide layer.
Transparent conductive coatings for optoelectronic and electronic devices
The invention provides processes for the manufacture of conductive transparent films and electronic or optoelectronic devices comprising same.
Transparent conductive film and production method therefor
A transparent conductive film, includes: an organic polymer film substrate; at least one undercoat layer formed on the organic polymer film substrate by a dry process; and a transparent conductive coating provided on at least one surface of the organic polymer film substrate with the undercoat layer interposed therebetween, wherein the transparent conductive coating is a crystalline coating of an indium-based complex oxide having a content of a tetravalent metal element oxide of 7 to 15% by weight as calculated by the formula {(the amount of the tetravalent metal element oxide)/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100(%), the transparent conductive coating has a thickness in the range of 10 to 40 nm, and the transparent conductive coating has a specific resistance of 1.3×10.sup.−4 to 2.8×10.sup.−4 Ω.Math.cm.
A METHOD FOR FORMING A GRADIENT THIN FILM BY SPRAY PYROLYSIS
The present invention proposes a method to form a gradient thin film using a spray pyrolysis technique. The method comprises providing a base substrate, preparing a spray aqueous solution by mixing at least two precursor compounds comprising at least two different elements and spraying the spray aqueous solution onto the base substrate. According to the present invention, the ratio of the concentration of the at least two different elements within the spray aqueous solution is varied while performing the method. In this way, a thin film having a gradient of elemental composition over its layer thickness may be formed.