A method and system are provided for crystallizing thin films with a laser system. The method includes obtaining a thin film comprising a substrate and a target layer that contains nano-scale particles and is deposited on the substrate. The heat conduction between the target layer and the substrate of the thin film is determined based on thermal input from the laser system to identify operating parameters for the laser system that cause crystallization of the nano-scale particles of the target layer in an environment at near room temperature with the substrate remaining at a temperature below the temperature of the target layer. The laser system is then operated with the determined operating parameters to generate a laser beam that is transmitted along an optical path to impinge the target layer. The laser beam is pulsed to create a localized rapid heating and cooling of the target layer.

The invention relates to a method for producing an optical module, comprising the following steps: a) providing a chip having an optical element integrated in the chip, wherein the optical element bas a first electrode and a second electrode, and wherein the chip has a first connection contact for the first electrode and a second connection contact for the second electrode, such that an operating voltage for the optical element can be applied between the first connection contact and the second connection contact, and wherein the chip has an optically active side, which is designed to emit and/or to receive radiation; b) connecting the chip to a film, such that the film completely covers the optically active side of the chip, wherein the film is a film made from acrylate, polyarylate, or polyurethane, wherein the film, at least in the region located above the optically active side, is transparent to radiation which. when operating voltage is applied, can be emitted or received by the optical element; c) contacting the first connection contact of the chip by means of a conducting track arranged on the film and contacting the second connection contact by means of an additional conducting track.

In various embodiments, photovoltaic devices incorporate discontinuous passivation layers (i) disposed between a thin-film absorber layer and a partner layer, (ii) disposed between the partner layer and a front contact layer, and/or (iii) disposed between a back contact layer and the thin-film absorber layer.

In case of forming electrodes for electronic device using a two-dimensional semiconductor, a two-dimensional semiconductor layer doped into n-type or p-type is formed on a substrate, a first area and a second area of the doped two-dimensional semiconductor layer is patterned into a predetermined pattern shape, and a first electrode and a second electrode are formed on the patterned first and second areas, respectively.

A method for forming a photovoltaic device includes forming an absorber layer with a granular structure on a conductive layer; conformally depositing an insulating protection layer over the absorber layer to fill in between grains of the absorber layer; and planarizing the protection layer and the absorber layer. A buffer layer is formed on the absorber layer, and a top transparent conductor layer is deposited over the buffer layer.

A method for producing a rear-side contact system for a silicon thin-film solar cell having pn junction formed from a silicon absorber layer and an emitter layer includes applying an organic insulation layer to the emitter layer; producing contact holes in the insulation layer as far as the absorber layer and the emitter layer; subsequently insulating the contact holes; subsequently applying a low-melting metal layer to form n and p contacts in the contact holes; separating the metal layer into n-contacting and p-contacting regions by laser-cutting; before applying the organic insulation layer to the emitter layer, applying a TCO layer; producing holes for contacts for the silicon absorber layer in the organic insulation; and subsequently selectively doping the produced holes for the contacts as far as the silicon absorber layer.

A method of manufacturing a thin-film solar cell includes forming a first electrode on a substrate; forming a first petition groove for dividing the first electrode; forming a semiconductor layer on the first electrode and in the first partition groove; forming a second partition groove for dividing the semiconductor layer; forming a second electrode on the semiconductor layer and in the second partition groove; and forming a third partition groove for dividing the second electrode and the semiconductor layer. At least one of the steps of forming the first partition groove, the second partition groove, and the third partition groove includes forming an opening in a partition groove forming layer to expose a lower layer surface below the partition groove forming layer, bringing a needle into contact with the lower layer surface, and forming the partition groove by moving the needle in a predetermined direction.

An electronic device with an electrode having a superior light transmittance and including a substrate, an amine group-containing compound layer formed on the substrate, and a metal layer formed on the amine group-containing compound layer is provided. In accordance with the present invention, the electrode is easily manufactured when a solution process is used, has performances of a light transmittance, a sheet resistance, and flexibility higher than those of a typical ITO transparent electrode, and a manufacturing cost of the electrode may be reduced.

The present application relates to a conductive film, a method for manufacturing the same, and a display device including the same.

The present specification relates to a method for manufacturing a fine aluminum pattern, an aluminum pattern manufactured by the manufacturing method, and a conductive film including the same.