A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.

Intermediate temperature metallization pastes containing vanadium are disclosed. The metallization pastes can be used to fabricate electrodes interconnected to a transparent conductor.

A method for manufacturing a substrate with a transparent conductive film, includes emitting subnano-to-nanosecond laser light to a transparent conductive film formed on a surface of a substrate to form a laser-induced periodic surface structure having a corrugated shape in at least a part of the transparent conductive film.

A method of forming a metal silicide nanowire network that includes multiple metal silicide nanowires fused together in a disorderly arrangement on a substrate. The metal silicide nanowire network can be formed by applying a solution that contains silicon nanowires onto the substrate, forming a metal layer on the silicon nanowires, and performing a silicidation anneal such that the metal silicide nanowires are fused together in a disorderly arrangement, forming a mesh. After the silicidation anneal is performed, any unreacted silicon or metal can be selectively removed.

A method is described for selectively depositing a metallic layer (10) including one or more of copper, silver and gold. The method includes depositing a fluorinated layer (5) over a surface (1, 4). The fluorinated layer (5) has a thickness sufficient to substantially prevent deposition of the copper, silver and/or gold between the fluorinated layer (5) and the surface (1, 4) during a subsequent evaporation step using a given deposition rate. The method also includes forming the metallic layer (10) by evaporating, at the given deposition rate, the copper, silver and/or gold over the surface (1, 4) and the fluorinated layer (5). The copper, silver and/or gold preferentially adhere to the portions of the surface (1, 4) not covered by the fluorinated layer (s).

Method of manufacturing a photovoltaic cell, comprising the steps of: providing a photovoltaic conversion device; providing a transparent conductive oxide layer upon at least a first face of said photovoltaic conversion device; forming a self-assembled monolayer on said transparent conductive oxide layer, said self-assembled monolayer being based on molecules terminated by at least one group F which is chosen from: a phosphonic acid group, a P(O)O.sub.2.sup.−M.sup.+ group, a OPO.sub.3H.sub.2 group, or an OP(O)O.sub.2.sup.−M.sup.+ group, wherein M.sup.+ is a metal cation; patterning said self-assembled monolayer so as to define at least one plateable zone in which said transparent conductive oxide layer is exposed; plating a metal onto said at least one plateable zone.

An optoelectronic device comprising two photovoltaic absorber materials of CdSeTe and perovskite and their functional component layers that are monolithically integrated into a bifacial tandem solar cell structure.

The embodiment provides a transparent electrode having low resistance and high stability against impurities such as halogen and sulfur, a method of producing the transparent electrode, and an electronic device using the transparent electrode. A transparent electrode according to an embodiment includes a transparent substrate and a plurality of conductive regions disposed on a surface of the transparent substrate and separated from each other by a separation region, wherein the conductive region has a structure in which a first transparent conductive metal oxide layer, a metal layer, and a second transparent conductive metal oxide layer are laminated in this order from the substrate side, and in the separation region, there is disposed a trapping material. This transparent electrode can be produced by scribing the conductive region to form a separation region, and then using a halide or a sulfur compound.

There is provided a fabrication method of conductive nanonetworks through adaptation of a sacrificial layer includes: forming nanowire networks on a substrate; forming the sacrificial layer on a front surface of the substrate including the nanowire networks; removing the nanowire networks to expose a surface of the substrate within a region from which the nanowire networks are removed; forming a conductive material on the front surface of the substrate to fill the region, from which the nanowire networks are removed, with the conductive material while forming the conductive material on the sacrificial layer; and forming conductive nanonetworks made of the conductive material which fills the region from which the nanowire networks are removed, by removing the sacrificial layer.

Methods of annealing and/or sintering a transparent conductive oxide (TCO) film disclosed, and wherein the TCO film comprises indium tin oxide film (ITO), fluorine-doped tin film (FTO), indium doped zinc oxide (IZO), or aluminum-doped zinc oxide (AZO). Such methods involve irradiating the TCO film with a light source and where the annealing and/or sintering is selective to the TCO film.