Described herein are systems incorporating a Casimir cavity, such as an optical Casimir cavity or a plasmon Casimir cavity. The Casimir cavity modifies the zero-point energy density therein as compared to outside of the Casimir cavity. The Casimir cavities are paired in the disclosed systems with product generating devices and the difference in zero-point energy densities is used to directly drive the generation of products, such as chemical reaction products or emitted light.

Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.

A light emitting device according to embodiments includes a substrate, a light emitting structure disposed under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a submount disposed to face the substrate, first and second metal pads disposed on the submount to be spaced apart from each other, a first bump disposed on the first metal pad, a plurality of second bumps disposed on the second metal pad to be spaced apart from each other, a first ohmic layer interposed between the first conductive semiconductor layer and the first bump, a second ohmic layer interposed between the second conductive semiconductor layer and the plurality of second bumps, a first spreading layer interposed between the first ohmic layer and the first bump, a second spreading layer interposed between the second ohmic layer and the plurality of second bumps, and a current blocking layer disposed in a maximum heating area of the second ohmic layer overlapping an area between the plurality of second bumps in a thickness direction of the light emitting structure such that the current blocking layer does not cut the second ohmic layer in a horizontal direction intersecting the thickness direction.

A light emitting device includes: a light emitting element; a first reflecting member containing reflecting particles, and covering the upper surface of a base while exposing a light extraction surface of the light emitting element; a first cover member having a lower concentration of reflecting particles than the first reflecting member and covering the first reflecting member and a portion of lateral surfaces of the light emitting element while exposing the light extraction surface of the light emitting element; a second cover member covering a portion of the lateral surfaces of the light emitting element; a second reflecting member surrounding the second cover member in a top view and contacting the second cover member and the first reflecting member; the second reflecting member having a narrow-width portion being in contact with the first reflecting member and a wide-width portion located above the narrow-width portion in a cross-sectional view.

Alight emitting device package includes a leadframe unit, a molding layer, and a light emitting device. The leadframe unit has opposite leadframe top and bottom surfaces. The molding layer encloses the leadframe unit, and has a molding-layer bottom surface, a molding-layer surrounding surface extending upward from the molding-layer bottom surface to surround the leadframe unit, and a plurality of solder grooves indented from the molding-layer bottom surface. Each of the solder grooves has one end meeting the leadframe unit and another end opening at the molding-layer surrounding surface. The light emitting device is disposed on the leadframe top surface of the leadframe unit.

The present invention relates to a light emitting device comprising a first main layer of an electrically conducting material, a second main layer of an electrically conducting material and a light emitting unit between the first main layer and the second main layer, wherein the light emitting unit comprises a light emitting layer, and wherein the first main layer and/or the second main layer has a light exit orifice aligned with a section of the light emitting layer. The light emitting device can utilise impact ionisation to emit UV-C light.

A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; at least one groove disposed on a side surface of the mesa forming a concave region; an extension electrode forming ohmic contact with the first conductive type semiconductor layer in the concave region; an insulation layer covering the extension electrode, the first conductive type semiconductor layer, and the mesa, and including at least one first opening exposing the extension electrode and a second opening; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening.

Alight emitting device package includes a leadframe unit, a molding layer, and a light emitting device. The leadframe unit has opposite leadframe top and bottom surfaces. The molding layer encloses the leadframe unit, and has a molding-layer bottom surface, a molding-layer surrounding surface extending upward from the molding-layer bottom surface to surround the leadframe unit, and a plurality of solder grooves indented from the molding-layer bottom surface. Each of the solder grooves has one end meeting the leadframe unit and another end opening at the molding-layer surrounding surface. The light emitting device is disposed on the leadframe top surface of the leadframe unit.

Techniques are provided that pumping of deep traps in GaN electronic devices using photons from an on-chip photon source. In various embodiments, a method for optical pumping of deep traps in GaN HEMTs is provided using an on-chip integrated photon source that is configured to generate photons during operation of the HEMT. In an aspect, the on-chip photon source is a SoH-LED. In various additional embodiments, an integration scheme is provided that integrates the photon source into the drain electrode of a HEMT, thereby converting the conventional HEMT with an ohmic drain to a transistor with hybrid photonic-ohmic drain (POD), a POD transistor or PODFET for short.

A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; at least one groove disposed on a side surface of the mesa forming a concave region; an extension electrode forming ohmic contact with the first conductive type semiconductor layer in the concave region; an insulation layer covering the extension electrode, the first conductive type semiconductor layer, and the mesa, and including at least one first opening exposing the extension electrode and a second opening; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening.