An object is to provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability and a method for manufacturing the semiconductor device with high mass productivity. A main point is to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer and to foiiii an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer be used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer be used as a source region and a drain region.

A thin film transistor array panel includes a substrate, a first gate electrode disposed on the substrate, a voltage wire disposed on the substrate, a gate insulating layer disposed on the first gate electrode and the voltage wire, a semiconductor pattern including an oxide semiconductor material disposed on the gate insulating layer, a source electrode and a drain electrode disposed at a distance from each other on the semiconductor pattern, a first passivation layer disposed on the source electrode and the drain electrode, and a first electrode disposed on the first passivation layer and connected with the voltage wire.

A method and device for electrostatically controlling charges in an electrostatic field effect optoelectronic device by modulating charges in at least one layer of the electrostatic field effect optoelectronic device by providing either a positive bias or a negative bias to a capacitively coupled plate of the electrostatic field effect optoelectronic device thereby adjusting the charge utilization efficiency of the device.

Photonic devices monolithically integrated with CMOS are disclosed, including sub-100 nm CMOS, with active layers comprising acceleration regions, light emission and absorption layers, and optional energy filtering regions. Light emission or absorption is controlled by an applied voltage to deposited films on a pre-defined CMOS active area of a substrate, such as bulk Si, bulk Ge, Thick-Film SOI, Thin-Film SOI, Thin-Film GOI.

A light-emitting component includes a light-emitting element, a driving thyristor, and a light-absorbing layer. The light-emitting element emits light of a predetermined wavelength. The driving thyristor causes the light-emitting element to emit light or causes an amount of light emitted by the light-emitting element to increase, upon entering an on-state. The light-absorbing layer is disposed between the light-emitting element and the driving thyristor such that the light-emitting element and the driving thyristor are stacked, and absorbs light emitted by the driving thyristor.

It is an object to provide a liquid crystal display device which has excellent viewing angle characteristics and higher quality. The present invention has a pixel including a first switch, a second switch, a third switch, a first resistor, a second resistor, a first liquid crystal element, and a second liquid crystal element. A pixel electrode of the first liquid crystal element is electrically connected to a signal line through the first switch. The pixel electrode of the first liquid crystal element is electrically connected to a pixel electrode of the second liquid crystal element through the second switch and the first resistor. The pixel electrode of the second liquid crystal element is electrically connected to a Cs line through the third switch and the second resistor. A common electrode of the first liquid crystal element is electrically connected to a common electrode of the second liquid crystal element.

An object is to provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability and a method for manufacturing the semiconductor device with high mass productivity. A main point is to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer and to form an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer be used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer be used as a source region and a drain region.

Various embodiments of solid state transducer (“SST”) devices are disclosed. In several embodiments, a light emitter device includes a metal-oxide-semiconductor (MOS) capacitor, an active region operably coupled to the MOS capacitor, and a bulk semiconductor material operably coupled to the active region. The active region can include at least one quantum well configured to store first charge carriers under a first bias. The bulk semiconductor material is arranged to provide second charge carriers to the active region under the second bias such that the active region emits UV light.

An LED may include a third contact, for example to increase speed of operation of the LED. The LED with the third contact may be used in an optical communication system, for example a chip-to-chip optical interconnect.

An LED may have structures optimized for speed of operation of the LED. The LED may be a microLED. The LED may have a p− doped region with one or more quantum wells instead of an intrinsic region. The LED may have etched vias therethrough.