A micro-light emitting diode (uLED) device comprises: a mesa comprising: a plurality of semiconductor layers including an n-type layer, an active layer, and a p-type layer; a p-contact layer contacting the p-type layer; a cathode contacting the first sidewall of the n-type layer; a first region of dielectric material that insulates the p-contact layer, the active layer, and a first sidewall of the p-type layer from the cathode; an anode contacting the top surface of the p-contact layer; and a second region of dielectric material that insulates the active layer, a second sidewall of the p-type layer, and the second sidewall of the n-type layer from the anode. The top surface of the p-contact layer has a different planar orientation compared to the first and second sidewalls of the n-type layer. Methods of making and using the uLED devices are also provided.

A laser beam irradiation unit of a laser processing apparatus includes a laser oscillator that oscillates a laser, a Y-axis scanner that executes a high-speed scan with a laser beam emitted from the laser oscillator in a Y-axis direction, an X-axis scanner that executes processing feed of the laser beam emitted from the laser oscillator in an X-axis direction, and a beam condenser. The Y-axis scanner is selected from any of an AOD, a resonant scanner, and a polygon scanner and the X-axis scanner is selected from a galvano scanner and a resonant scanner.

A light-emitting device includes a semiconductor stack, a first electrode, a second electrode, and a supporting layer. The semiconductor stack includes a first semiconductor layer including a first top surface and a bottom surface, an active layer located on the first semiconductor layer, and a second semiconductor layer located on the active layer and including a second top surface. The first electrode is located on the first top surface. The second electrode is located on the second top surface. The supporting layer includes a first thickness, and directly covers at least 80% of the bottom surface. In a top view, the semiconductor stack includes a maximum length, and a ratio of the maximum length to the first thickness is smaller than 1. The supporting layer has a first thermal expansion coefficient smaller than 80 ppm/° C., and the supporting layer has a Young's modulus between 2˜10 GPa.

A method for fabricating light emitting diode (LED) dice includes the steps of: providing a substrate [30], and forming a plurality of die sized semiconductor structures [32] on the substrate [30]. The method also includes the steps of providing a receiving plate [42] having an elastomeric polymer layer [44], placing the substrate [30] and the receiving plate [42] in close proximity with a gap [101] therebetween, and performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate [30] to the semiconductor layer [50] at an interface with the substrate [30] to lift off the semiconductor structures [32] through the gap [101] onto the elastomeric polymer layer [44]. During the laser lift-off (LLO) process the elastomeric polymer layer [44] functions as a shock absorber to reduce momentum transfer, and as an adhesive surface to hold the semiconductor structures [32] in place on the receiving plate [42].

A light emitting diode (LED) pixel for a display including a first LED stack having a first well layer, a second LED stack disposed on the first LED stack and having a second well layer, a third LED stack disposed on the second LED stack and having a third well layer, a first electrode disposed on the first LED stack and in ohmic contact with the first LED stack, a second electrode disposed on the second LED stack and in ohmic contact with a surface of the second LED stack, and a third electrode in ohmic contact with a surface of the third LED stack, in which the first well layer includes at least one base material different from that of the second well layer.

A mass transfer method includes providing a transfer unit and a semiconductor carrying unit connected therewith, removing an element supporting structure of the semiconductor carrying unit from micro semiconductor elements of the semiconductor carrying unit, partially removing the photosensitive layer to form connecting structures, connecting a package substrate with electrodes of the micro semiconductor elements, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate. A mass transfer device is also disclosed.

A light emitting diode pixel for a display including a first subpixel comprising a first LED sub-unit, a second subpixel comprising a second LED sub-unit, and a third subpixel comprising a third LED sub-unit, in which each of the first, second, and third LED sub-units includes a first type of semiconductor layer and a second type of semiconductor layer, and the first, second, and third LED sub-units are separated from each other in a first direction, disposed at different planes from each other, and do not overlap each other in the first direction.

The present invention relates to an LED element, more particularly, to a micro-nanofin LED element and a method for manufacturing the same.

A display device manufacturing substrate according to the present disclosure comprises: a base part; assembly electrodes which extend in one direction and which are arranged on the base part; a dielectric layer formed on the base part to cover the assembly electrodes; a partitioning part formed on the dielectric layer; and cells which are formed in a plurality of rows and columns by means of the partitioning part, and on which semiconductor light-emitting elements are loaded, wherein the assembly electrodes extend in either the row direction or the column direction to overlap cells in the extending direction, and the assembly electrodes comprise a first assembly electrode overlapping cells that form one row or column, and a second assembly electrode simultaneously overlapping cells that form different rows or columns which are adjacent.

A display device includes light emitting elements each including a first area and a second area having different diameters, and a base layer surrounding the first area of the light emitting elements and contacting the first area of each of the light emitting elements. The second area of each of the light emitting elements protrudes from a first surface of the base layer.