The spin-entangled photon emission device comprises a Fabry-Pérot resonator with a solid state optical waveguide integrated on a substrate. Preferably, the device is used in a configuration that makes it possible to tune the resonance wavelength of the Fabry-Pérot resonator by straining or otherwise adjusting the effective optical length of the waveguide. A diamond membrane is located in the Fabry-Pérot resonator. The diamond membrane comprises a photon-source capable of emitting a photon that is entangled with a spin state of the photon source. A first surface of the diamond membrane abuts to a first minor of the Fabry-Pérot resonator. The optical waveguide has a first end facet bonded to a first surface of the diamond membrane. The first mirror of the Fabry-Pérot resonator is formed by a reflector on the second surface of the diamond membrane. The second mirror of the Fabry-Pérot resonator is formed by a reflector on a second end facet of the optical waveguide or inside the optical waveguide.

A light-emitting diode may include: a first n-doped semiconductor portion; a second p-doped semiconductor portion; an active zone disposed between the first and second portions and including at least one emitting semiconductor portion; a layer that is electrically conductive and optically transparent to at least one wavelength of the UV range configured to be emitted from the emitting portion, the layer being such that the second portion is disposed between the layer and the active zone. The semiconductors of the first portion and of the emitting portion may include compounds including nitrogen atoms as well as atoms of aluminum and/or of gallium. The semiconductor of the second portion may include Al.sub.X2Ga.sub.(1-X2-Y2)In.sub.Y2N that is p-doped with magnesium atoms, wherein X2>0, Y2>0, and X2+Y2<1, and in which the atomic concentration of magnesium is greater than 10.sup.17 at/cm.sup.3. The electrically conductive layer may include doped diamond.

A semiconductor device, includes: a first conductive type semiconductor region including a first semiconductor structure, wherein the first semiconductor structure includes one or more pairs of stack, the one or more pairs of stack respectively includes a first layer and a second layer, the first layer includes Al.sub.xGa.sub.1-xN, the second layer includes Al.sub.yGa.sub.1-yN, wherein 0≤x<1, 0<y<1, x<y, wherein one of the one or more pairs of stack includes an interface region located between the first layer and the second layer adjacent to the first layer; a second conductive type semiconductor region located on the first conductive type semiconductor region; and an active region located between the first conductive type semiconductor region and the second conductive type semiconductor region; wherein the first semiconductor structure includes a first dopant having a first doping concentration with a peak value at the interface region.

A light emitting element comprises a semiconductor structure which includes an n-side layer, a p-side layer, and an ultraviolet light emitting active layer positioned between the n-side layer and the p-side layer, each being made of a nitride semiconductor, an n-electrode electrically connected to the n-side layer, and a p-electrode electrically connected to the p-side layer. The active layer has a well layer containing Al, a barrier layer containing Al, and holes defined by the lateral faces of the well layer and the lateral faces of the barrier layer. The p-side layer has a first layer containing Al, a second layer containing Al disposed on the first layer and in contact with the lateral faces of the well layer, and a third layer disposed on the second layer. The third layer is smaller in thickness than the first layer.

A nitride semiconductor light-emitting element includes an active layer comprising at least one well layer, a p-type semiconductor layer located on one side of the active layer, and an electron blocking stack body located between the active layer and the p-type semiconductor layer. The electron blocking stack body includes a first electron blocking layer and a second electron blocking layer that is located on the p-type semiconductor layer side relative to the first electron blocking layer and has a lower Al composition ratio than that of the first electron blocking layer. When a total number of the well layers in the active layer is N, a film thickness of the first electron blocking layer is a film thickness d [nm] and an Al composition ratio of the second electron blocking layer is an Al composition ratio x [%], relationships 0.1N+0.9≤d≤0.2N+2.0 and 10N+40≤x≤10N+60 are satisfied.

A method for manufacturing a light-emitting element includes forming a first light-emitting part, forming a tunnel junction part on the first light-emitting part, and forming a second light-emitting part on the tunnel junction part. The step of forming the first light-emitting part includes forming a first layer with a first p-type impurity concentration at a first temperature, and forming a second layer with a second p-type impurity concentration on the first layer. The second p-type impurity concentration is greater than the first p-type impurity concentration. The step of forming the second light-emitting part includes forming a third layer with a third p-type impurity concentration at a second temperature and forming a fourth layer with a fourth p-type impurity concentration on the third layer. The fourth p-type impurity concentration is greater than the third p-type impurity concentration. The second temperature is less than the first temperature.

A light-emitting diode is provided, including: a first layer of n-doped Al.sub.X1Ga.sub.(1-X1-Y1)In.sub.Y1N, with X1>0 and X1+Y1≤1; a second layer of p-doped Al.sub.X2Ga.sub.(1-X2-Y2)In.sub.Y2N, with X2>0 and X2+Y2≤1; an active area disposed between the first and the second layers and comprising at least one multi-quantum well emissive structure; nanowires based on AlN p-doped with indium and magnesium atoms, disposed on the second layer; and an ohmic contact layer in contact with the nanowires. A method for producing a light-emitting diode is also provided.

The present application provides an epitaxial wafer of a red light-emitting diode, and a preparation method therefor, by designing an n-type semiconductor layer as a gradient layer with the content of an aluminum element gradually increasing along a growth direction of the epitaxial wafer and the content of an indium element gradually decreasing along a stacking direction of the epitaxial wafer, and a constant layer with the content of an aluminum element and an indium element not changing along the growth direction of the epitaxial wafer, the potential barrier at the side close to a multi-quantum well layer gradually rises, preventing electrons and holes in the multi-well quantum layer for radiative recombination from moving to the outside of the MQW region, confining the holes and electrons to have a radiative recombination in the MQW and reducing non-radiative recombination, and also facilitating the flowing of electrons in the n-layer to the MQW region.

A method or system for engineering at least one volume in a light emitting diode (LED) for higher operating efficiency includes forming a first semiconductor region of a light emitting diode doped with a first dopant concentration. A second semiconductor region of the light emitting diode doped with a second dopant concentration coupled to the first semiconductor region is formed. The forming the first semiconductor region or the forming the second semiconductor region further comprises forming a volume of the first semiconductor region or another volume of the second semiconductor region based on a calculation so that an electron concentration in the first semiconductor region or the second semiconductor region substantially matches within a first set percentage a hole concentration in the other one of the first semiconductor region or the second semiconductor region.

A light emitting apparatus includes an electrode and a laminated structure. The laminated structure includes an n-type first semiconductor layer, a light emitting layer, a p-type second semiconductor layer, a tunnel junction layer, and an n-type third semiconductor layer. The electrode is electrically connected to the first semiconductor layer. The first semiconductor layer, the light emitting layer, the second semiconductor layer, the tunnel junction layer, and the third semiconductor layer are arranged in a presented order. The light emitting layer and the first semiconductor layer form a columnar section.