An optoelectronic component is disclosed. In an embodiment an optoelectronic component includes a semiconductor chip configured to emit radiation and a conversion element including quantum dots, the conversion element configured to convert a wavelength of the radiation, wherein each quantum dot includes a wavelength-converting core and an inorganic encapsulation, wherein inorganic encapsulations form a matrix material of at least adjacent quantum dots, and wherein the adjacent quantum dots have a distance of at least 10 nm.

An optoelectronic component is disclosed. In an embodiment an optoelectronic component includes a semiconductor chip configured to emit radiation and a conversion element including quantum dots, the conversion element configured to convert a wavelength of the radiation, wherein each quantum dot includes a wavelength-converting core and an inorganic encapsulation, wherein inorganic encapsulations form a matrix material of at least adjacent quantum dots, and wherein the adjacent quantum dots have a distance of at least 10 nm.

A light emitting element comprises a semiconductor structure which includes an n-side layer, a p-side layer, and an ultraviolet light emitting active layer positioned between the n-side layer and the p-side layer, each being made of a nitride semiconductor, an n-electrode electrically connected to the n-side layer, and a p-electrode electrically connected to the p-side layer. The active layer has a well layer containing Al, a barrier layer containing Al, and holes defined by the lateral faces of the well layer and the lateral faces of the barrier layer. The p-side layer has a first layer containing Al, a second layer containing Al disposed on the first layer and in contact with the lateral faces of the well layer, and a third layer disposed on the second layer. The third layer is smaller in thickness than the first layer.

The invention is a small-sized vertical light emitting diode chip with high energy efficiency, wherein a PN junction structure is arranged on a light-emitting region platform of an interface structure; a highly reflective metal layer is arranged under the light-emitting region platform; the interface structure is provided with a P-type ohmic contact area under an outwardly extending platform adjacent to the light-emitting region platform; an insulating layer is formed on the outwardly extending platform; an N-type ohmic contact electrode is in ohmic contact with the PN junction structure and covers the border covering region at a position opposite to the outwardly extending platform; the current conduction is achieved diagonally on the opposite sides by locally diagonally symmetric geometric positioning of the N-type ohmic contact electrode and the P-type ohmic contact area.

The invention is a small-sized vertical light emitting diode chip with high energy efficiency, wherein a PN junction structure is arranged on a light-emitting region platform of an interface structure; a highly reflective metal layer is arranged under the light-emitting region platform; the interface structure is provided with a P-type ohmic contact area under an outwardly extending platform adjacent to the light-emitting region platform; an insulating layer is formed on the outwardly extending platform; an N-type ohmic contact electrode is in ohmic contact with the PN junction structure and covers the border covering region at a position opposite to the outwardly extending platform; the current conduction is achieved diagonally on the opposite sides by locally diagonally symmetric geometric positioning of the N-type ohmic contact electrode and the P-type ohmic contact area.

An optical filter includes a substrate, a filter layer on the substrate and including color filters, and a light-converting layer over the filter layer and including light-converting portions respectively corresponding to the color filters. A low refractive index layer is between the filter layer and the light-converting layer and has a refractive index less than a refractive index of the light-converting layer. A first capping layer is between the low refractive index layer and the light-converting layer and has a refractive index ranging between the refractive index of the light-converting layer and the refractive index of the low refractive index layer.

An optical filter includes a substrate, a filter layer on the substrate and including color filters, and a light-converting layer over the filter layer and including light-converting portions respectively corresponding to the color filters. A low refractive index layer is between the filter layer and the light-converting layer and has a refractive index less than a refractive index of the light-converting layer. A first capping layer is between the low refractive index layer and the light-converting layer and has a refractive index ranging between the refractive index of the light-converting layer and the refractive index of the low refractive index layer.

A light emitting component comprising a light source (10) for emitting blue light (aa), a first layer (1) comprising a red phosphor, and a second layer (2) comprising luminescent crystals (20). Upon absorption of the light emitted by the light source (10), the luminescent crystals (20) emit light of a wavelength in the green light spectrum (cc). The first layer (1) is arranged adjacent to the light source (10). The second layer (2) is arranged remotely from the first layer (1).

A light emitting component comprising a light source (10) for emitting blue light (aa), a first layer (1) comprising a red phosphor, and a second layer (2) comprising luminescent crystals (20). Upon absorption of the light emitted by the light source (10), the luminescent crystals (20) emit light of a wavelength in the green light spectrum (cc). The first layer (1) is arranged adjacent to the light source (10). The second layer (2) is arranged remotely from the first layer (1).

A nitride semiconductor light-emitting element includes an active layer comprising at least one well layer, a p-type semiconductor layer located on one side of the active layer, and an electron blocking stack body located between the active layer and the p-type semiconductor layer. The electron blocking stack body includes a first electron blocking layer and a second electron blocking layer that is located on the p-type semiconductor layer side relative to the first electron blocking layer and has a lower Al composition ratio than that of the first electron blocking layer. When a total number of the well layers in the active layer is N, a film thickness of the first electron blocking layer is a film thickness d [nm] and an Al composition ratio of the second electron blocking layer is an Al composition ratio x [%], relationships 0.1N+0.9≤d≤0.2N+2.0 and 10N+40≤x≤10N+60 are satisfied.