A semiconductor light-emitting device includes a buffer structure, a first-type semiconductor layer on the buffer structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. The buffer structure includes a nucleation layer, a first dislocation-removing structure on the nucleation layer, and a buffer layer on the first dislocation-removing structure. The first dislocation-removing structure includes a first material layer on the nucleation layer and a second material layer on the first material layer. The second material layer has a lattice constant different from a lattice constant of the first material layer. A roughness of a top surface of the first material layer is higher than a roughness of a top surface of the nucleation layer and higher than a roughness of a top surface of the second material layer.

A method for producing a nitride compound semiconductor component is disclosed. In an embodiment the method includes providing a growth substrate, growing a nucleation layer of an aluminum-containing nitride compound semiconductor onto the growth substrate, growing a tension layer structure for generating a compressive stress, wherein the tension layer structure comprises at least a first GaN semiconductor layer and a second GaN semiconductor layer, and wherein an Al(Ga)N interlayer for generating the compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer and growing a functional semiconductor layer sequence of the nitride compound semiconductor component onto the tension layer structure, wherein a growth of the second GaN semiconductor layer is preceded by a growth of a first 3D AlGaN layer on the Al(Ga)N interlayer in such a way that it has nonplanar structures.

A method for producing a nitride compound semiconductor component is disclosed. In an embodiment the method includes providing a growth substrate, growing a nucleation layer of an aluminum-containing nitride compound semiconductor onto the growth substrate, growing a tension layer structure for generating a compressive stress, wherein the tension layer structure comprises at least a first GaN semiconductor layer and a second GaN semiconductor layer, and wherein an Al(Ga)N interlayer for generating the compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer and growing a functional semiconductor layer sequence of the nitride compound semiconductor component onto the tension layer structure, wherein a growth of the second GaN semiconductor layer is preceded by a growth of a first 3D AlGaN layer on the Al(Ga)N interlayer in such a way that it has nonplanar structures.

An epitaxial substrate structure includes: a patterned substrate unit including a substrate having a top surface and spaced-apart protrusions formed thereon; and a buffer layer disposed on the top surface and the protrusions. Each of the protrusions has a bottom adjacent to the top surface, and a top opposite to the bottom. The buffer layer has a first portion disposed on the top surface, and second portions respectively disposed on the protrusions. Each of the second portions of the buffer layer has a thickness that gradually reduces from the bottom to the top along a respective one of the protrusions. An LED chip including the epitaxial substrate structure and manufacturing methods of the epitaxial substrate structure and the LED chip are also provided.

An epitaxial substrate structure includes: a patterned substrate unit including a substrate having a top surface and spaced-apart protrusions formed thereon; and a buffer layer disposed on the top surface and the protrusions. Each of the protrusions has a bottom adjacent to the top surface, and a top opposite to the bottom. The buffer layer has a first portion disposed on the top surface, and second portions respectively disposed on the protrusions. Each of the second portions of the buffer layer has a thickness that gradually reduces from the bottom to the top along a respective one of the protrusions. An LED chip including the epitaxial substrate structure and manufacturing methods of the epitaxial substrate structure and the LED chip are also provided.

A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.

An LED module, an LED source substrate, a display panel, and a display apparatus are provided. The LED module includes N LED chips. N is an integer not smaller than 2. The N LED chips share one first electrode. At least two of the N LED chips each include a second electrode.

Disclosed is a full-color LED epitaxial structure, having different area ratios of pillars corresponding to an unit area of a substrate, which is utilized to realize different flow rates of reaction gas around each of the pillars when a light-emitting layer is grown, and different doping efficiency of each element in the growing light-emitting layer, which in turn realizes different composition ratios of each element in the growing light-emitting layer and different light-emitting wavelengths of LED. The above process is simple and the full-color LED semiconductor structure can be produced on a single substrate. And light-emitting wavelengths of LED can be adjusted only by adjusting the area ratio of the pillars to adjust a composition ratio of the light-emitting layer, thus reducing manufacturing processes of the full-color LED.

A light-emitting device includes a laminate provided at a substrate, a first electrode provided on an opposite side of the laminate from the substrate, and a second electrode provided on an opposite side of the first electrode from the substrate. The laminate includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer is provided between the substrate and the light-emitting layer. The first electrode constitutes a plurality of column portions. The second electrode is coupled to the plurality of column portions. The first electrode is a transparent electrode formed of a metal oxide transmitting light generated at the light-emitting layer.

A group-III-nitride structure and a manufacturing method thereof are provided. In the manufacturing method, a first mask layer is first formed on a substrate; an uncoalesced second group-III-nitride epitaxial layer is formed by performing a first epitaxial growth with the first mask layer as a mask; and a second mask layer is formed at least on the second group-III-nitride epitaxial layer; a third group-III-nitride epitaxial layer is laterally grown and formed by performing a second epitaxial growth on the second group-III-nitride epitaxial layer with the second mask layer as a mask, where the second group-III-nitride epitaxial layer is coalesced by the third group-III-nitride epitaxial layer; a fourth group-III-nitride epitaxial layer is formed by performing a third epitaxial growth on the third group-III-nitride epitaxial layer.