In an embodiment a light emitting diode includes an n-type n-layer, a p-type p-layer and an intermediate active zone configured to generate ultraviolet radiation, a p-type semiconductor contact layer having a varying thickness and a plurality of thickness maxima directly located on the p-layer and an ohmic-conductive electrode layer directly located on the semiconductor contact layer, wherein the n-layer and the active zone are each of AlGaN and the p-layer is of AlGaN or InGaN, wherein the semiconductor contact layer is a highly doped GaN layer, and wherein the thickness maxima have an area concentration of at least 10.sup.4 cm.sup.−2.

A light-emitting diode (LED) chip with reflective layers having high reflectivity is disclosed. The LED chip may include an active LED structure including an active layer between an n-type layer and a p-type layer. A first reflective layer is adjacent the active LED structure and comprises a plurality of dielectric layers with varying optical thicknesses. The plurality of dielectric layers may include a plurality of first dielectric layers and a plurality of second dielectric layers of varying thicknesses and compositions. The LED chip may further include a second reflective layer that includes an electrically conductive path through the first reflective layer. An adhesion layer may be provided between the first reflective layer and the second reflective layer. The adhesion layer may comprise a metal oxide that promotes improved adhesion with reduced optical losses.

A light-emitting diode (LED) chip with reflective layers having high reflectivity is disclosed. The LED chip may include an active LED structure including an active layer between an n-type layer and a p-type layer. A first reflective layer is adjacent the active LED structure and comprises a plurality of dielectric layers with varying optical thicknesses. The plurality of dielectric layers may include a plurality of first dielectric layers and a plurality of second dielectric layers of varying thicknesses and compositions. The LED chip may further include a second reflective layer that includes an electrically conductive path through the first reflective layer. An adhesion layer may be provided between the first reflective layer and the second reflective layer. The adhesion layer may comprise a metal oxide that promotes improved adhesion with reduced optical losses.

In a general aspect, a micro-LED includes a semiconductor mesa having a lateral dimension less than 5 um along a horizontal direction of the micro-LED, and a contact formed on a non-horizontal face of the semiconductor mesa. The semiconductor mesa includes a plurality of quantum wells (QWs), and a p-type semiconductor layer formed between the contact and the plurality of QWs. The contact, the p-type semiconductor layer and the plurality of QWs are configured such that, when the micro-LED is driven at an effective current density less than 50 A/cm2, holes are injected from the contact to the plurality of QWs through the p-type semiconductor layer. The injected holes diffuse laterally in the plurality of QWs over a distance greater than 1 micrometer (μm).

In a general aspect, a micro-LED includes a semiconductor mesa having a lateral dimension less than 5 um along a horizontal direction of the micro-LED, and a contact formed on a non-horizontal face of the semiconductor mesa. The semiconductor mesa includes a plurality of quantum wells (QWs), and a p-type semiconductor layer formed between the contact and the plurality of QWs. The contact, the p-type semiconductor layer and the plurality of QWs are configured such that, when the micro-LED is driven at an effective current density less than 50 A/cm2, holes are injected from the contact to the plurality of QWs through the p-type semiconductor layer. The injected holes diffuse laterally in the plurality of QWs over a distance greater than 1 micrometer (μm).

The present invention relates to a flexible skin patch equipped with an ultra-thin LED assembly that emits light in a specific wavelength range and an invention for manufacturing the same, and is related to an invention capable of providing a flexible skin patch that has the excellent effect of promoting vitamin D production in a localized area of the skin, and has the effect of alleviating or treating local skin psoriasis, fungi, fungal tumors and eczema, and has excellent antiviral effect, and is easy to attach and detach.

The present invention relates to a flexible skin patch equipped with an ultra-thin LED assembly that emits light in a specific wavelength range and an invention for manufacturing the same, and is related to an invention capable of providing a flexible skin patch that has the excellent effect of promoting vitamin D production in a localized area of the skin, and has the effect of alleviating or treating local skin psoriasis, fungi, fungal tumors and eczema, and has excellent antiviral effect, and is easy to attach and detach.

The present application relates to a light-emitting device, comprising an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode, which are stacked in sequence, wherein the light-emitting layer comprises N stacked light-emitting units; each light-emitting unit comprises a thermal activation delayed fluorescent material layer and a quantum dot material layer; the light emitted from the thermal activation delayed fluorescent material layer and the light emitted from the quantum dot material layer are synthesized into white light.

The present application relates to a light-emitting device, comprising an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode, which are stacked in sequence, wherein the light-emitting layer comprises N stacked light-emitting units; each light-emitting unit comprises a thermal activation delayed fluorescent material layer and a quantum dot material layer; the light emitted from the thermal activation delayed fluorescent material layer and the light emitted from the quantum dot material layer are synthesized into white light.

A display device is provided. The display device comprises a plurality of pixel electrodes on a first substrate and spaced apart from each other; a plurality of light emitting elements on the plurality of pixel electrodes; and a common electrode layer on the plurality of light emitting elements, wherein the common electrode layer includes a first common electrode layer on the plurality of light emitting elements, and a second common electrode layer between the first common electrode layer and the plurality of light emitting elements, and a lattice constant of the first common electrode layer is larger than a lattice constant of the second common electrode layer.