A flexible wire comprises a conductive core surrounded by one or more radial p-n diodes and alternating conductive and non-conductive bands along an outermost surface. Methods for producing the wire are also disclosed, as are textiles and other flexible materials comprising or consisting of such flexible wires.

Disclosed herein is an apparatus including a first three-dimensional (3-D) structure, a second 3-D structure, and a conductive layer. The first 3D structure includes a first-type doped semiconductor material having a semi-polar facet. The second 3-D structure forms a light-emitting diode (LED) and includes a second-type doped semiconductor material, an active layer, and the first-type doped semiconductor material. The conductive layer at least partially overlays and is in ohmic contact with the semi-polar facet. The conductive layer is configured to carry current that flows between the semi-polar facet and the active layer. In some embodiments, the first-type doped semiconductor material may include an N-type doped semiconductor material, and the second-type doped semiconductor material may include a P-type doped semiconductor material. The first-type doped semiconductor material of both 3-D structures may be etched from a common first-type doped semiconductor epitaxial layer.

Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a semiconductor structure with a p-type superlattice region, an i-type superlattice region, and an n-type superlattice region is disclosed. The semiconductor structure can have a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. In some cases, there are no abrupt changes in polarisation at interfaces between each region. At least one of the p-type superlattice region, the i-type superlattice region and the n-type superlattice region can comprise a plurality of unit cells exhibiting a monotonic change in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a semiconductor structure with a p-type superlattice region, an i-type superlattice region, and an n-type superlattice region is disclosed. The semiconductor structure can have a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. In some cases, there are no abrupt changes in polarisation at interfaces between each region. At least one of the p-type superlattice region, the i-type superlattice region and the n-type superlattice region can comprise a plurality of unit cells exhibiting a monotonic change in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

The present application relates to a light-emitting device, comprising an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode, which are stacked in sequence, wherein the light-emitting layer comprises N stacked light-emitting units; each light-emitting unit comprises a thermal activation delayed fluorescent material layer and a quantum dot material layer; the light emitted from the thermal activation delayed fluorescent material layer and the light emitted from the quantum dot material layer are synthesized into white light.

A light emitting diode includes a mesa structure containing a first-conductivity-type compound semiconductor layer, an active layer stack configured to emit light at a peak wavelength, and a second-conductivity-type compound semiconductor layer, and a passivation material layer contacting at least a sidewall of the mesa structure. The passivation material layer has a first crystal structure that matches a second crystal structure of the first-conductivity-type compound semiconductor layer and the second-conductivity-type compound semiconductor layer.

A display device is provided. The display device comprises a plurality of pixel electrodes on a first substrate and spaced apart from each other; a plurality of light emitting elements on the plurality of pixel electrodes; and a common electrode layer on the plurality of light emitting elements, wherein the common electrode layer includes a first common electrode layer on the plurality of light emitting elements, and a second common electrode layer between the first common electrode layer and the plurality of light emitting elements, and a lattice constant of the first common electrode layer is larger than a lattice constant of the second common electrode layer.

Disclosed are a semiconductor light-emitting device and a preparation method of the semiconductor light-emitting device. The preparation method of the semiconductor light-emitting device includes: forming a mask layer on a substrate, the mask layer is provided with a plurality of openings exposing the substrate; etching the substrate at each of the plurality of openings to form a first groove, and forming a first reflector in the first groove; epitaxially growing a light-emitting structure on the first reflector, and the light-emitting structure includes a first conductive type semiconductor layer, a multiple quantum well layer and a second conductive type semiconductor layer epitaxial grown in sequence; forming a second reflector in one side of the light-emitting structure away from the first reflector.

Disclosed are a semiconductor light-emitting device and a preparation method of the semiconductor light-emitting device. The preparation method of the semiconductor light-emitting device includes: forming a mask layer on a substrate, the mask layer is provided with a plurality of openings exposing the substrate; etching the substrate at each of the plurality of openings to form a first groove, and forming a first reflector in the first groove; epitaxially growing a light-emitting structure on the first reflector, and the light-emitting structure includes a first conductive type semiconductor layer, a multiple quantum well layer and a second conductive type semiconductor layer epitaxial grown in sequence; forming a second reflector in one side of the light-emitting structure away from the first reflector.

A method for porosifying a Ill-nitride material in a semiconductor structure is provided, the semiconductor structure comprising a sub-surface structure of a first Ill-nitride material, having a charge carrier density greater than 5×10.sup.17 cm.sup.−3, beneath a surface layer of a second Ill-nitride material, having a charge carrier density of between 1×10.sup.14 cm.sup.−3 and 1×10.sup.17 cm.sup.−3. The method comprises the steps of exposing the surface layer to an electrolyte, and applying a potential difference between the first Ill-nitride material and the electrolyte, so that the sub-surface structure is porosified by electrochemical etching, while the surface layer is not porosified. A semiconductor structure and uses thereof are further provided.