A light emitting diode (LED) structure includes a semiconductor template having a template top-surface, an active quantum well (QW) structure formed over the semiconductor template, and a p-type layer. The p-type layer has a bottom-surface that faces the active QW and the template top-surface. The bottom-surface includes a recess sidewall. The recess sidewall of the p-type layer is configured for promoting injection of holes into the active QW structure through a QW sidewall of the active QW structure.

A light emitting diode lighting system has a base arranged as a cylinder further comprising a pair of arcuate extensions having a pair of arcuate openings therebetween. Electrical tracks are joined to the base. A semiconductor substrate is arranged around an out surface of the base and connected to the electrical tracks. A polymeric housing is joined to the base and housing the electrical tracks. A germanium layer and a silicon layer are joined to the semiconductor substrate. An outer layer is joined to the germanium layer and the silicon layer and configured to dissipate heat from the germanium layer and the silicon layer. An outer module is joined to the outer layer, and configured to mount the light emitting diode lighting system into an external housing.

A light-emitting device includes a semiconductor light-emitting stack and a distributed Bragg reflector (DBR) structure. The semiconductor light-emitting stack includes a light-emitting layer. The DBR structure is disposed on the semiconductor light-emitting stack and includes a plurality of first dielectric material layers and a plurality of second dielectric material layers that are alternately stacked on the semiconductor light-emitting stack. The first dielectric material layer has a first refractive index, and the second dielectric material layer has a second refractive index. The first refractive index is lower than the second refractive index. The second dielectric material layer has an optical thickness that is smaller than that of the first dielectric material layer.

A light-emitting element includes a first semiconductor layer doped to have a first polarity; a second semiconductor layer doped to have a second polarity that is different from the first polarity; an active layer placed between the first semiconductor layer and the second semiconductor layer; and an insulating layer surrounding at least the outer surface of the active material. The insulating layer includes an insulating film surrounding the active layer, and an element dispersion agent including a magnetic metal and bonded to an outer surface of the insulating film.

A display device includes a first electrode, a second electrode disposed spaced apart from the first electrode in a first direction, and an element part disposed between the first electrode and the second electrode. The element part includes light-emitting elements that have a shape extending in one direction and are arranged spaced apart from each other in a second direction perpendicular to the first direction; and a binder surrounding each of the light-emitting elements and fixing the light-emitting elements. The one direction in which the light-emitting elements extend is parallel to the first direction.

A method for manufacturing a nitride semiconductor light-emitting element includes growing a p-type cladding layer with an average Al composition ratio in a thickness direction of not less than 70%, and growing a p-type contact layer with an Al composition ratio of not more than 10%. A flow rate ratio F.sub.p/F.sub.III is a p/III ratio and a flow rate ratio F.sub.V/F.sub.III is a V/III ratio. The p-type cladding layer is grown in the growing the p-type cladding layer at a growth rate of not more than 2.5 nm/min, a p/III ratio of not less than 0.0002 and not more than 0.0400 and a VIII ratio of not more than 7000. The p-type contact layer is grown in the growing the p-type contact layer at a growth rate of not more than 3.3 nm/min, a p/III ratio of not less than 0.0200 and a V/III ratio of not less than 10000.

A method for manufacturing a nitride semiconductor light-emitting element includes growing a p-type cladding layer with an average Al composition ratio in a thickness direction of not less than 70%, and growing a p-type contact layer with an Al composition ratio of not more than 10%. A flow rate ratio F.sub.p/F.sub.III is a p/III ratio and a flow rate ratio F.sub.V/F.sub.III is a V/III ratio. The p-type cladding layer is grown in the growing the p-type cladding layer at a growth rate of not more than 2.5 nm/min, a p/III ratio of not less than 0.0002 and not more than 0.0400 and a VIII ratio of not more than 7000. The p-type contact layer is grown in the growing the p-type contact layer at a growth rate of not more than 3.3 nm/min, a p/III ratio of not less than 0.0200 and a V/III ratio of not less than 10000.

A display device includes a lower metal layer disposed on a surface of a substrate and including a first opening overlapping a rear emission pixel in a plan view; a first electrode and a second electrode disposed in each of the rear emission pixel and a front emission pixel, the first electrode and the second electrode being spaced apart from each other on the lower metal layer; first light emitting elements disposed between the first electrode and the second electrode disposed in the rear emission pixel; second light emitting elements disposed between the first electrode and the second electrode disposed in the front emission pixel; and a reflective layer disposed on the first light emitting elements and overlapping the rear emission pixel in a plan view, the reflective layer overlaps at least one of the first light emitting elements in a plan view.

A display device includes a substrate with a display area and a non-display area adjacent to the display area, a transistor disposed in the display area of the substrate and on the substrate, a reflective electrode disposed on the transistor and electrically connected to the transistor, the reflective electrode including molybdenum (Mo), an insulating film disposed on the reflective electrode and including at least one thin film layer, the at least one thin film layer including a first thin film including a material having a refractive index of about 2.0 or more, and a second thin film disposed on the first thin film and including a material having a refractive index of about 1.8 or less, a contact electrode disposed on the insulating film and electrically connected to the reflective electrode and a light emitting diode disposed on the insulating film and electrically connected to the contact electrode.

Disclosed herein are a light emitting diode package and a method of manufacturing the same. The light emitting diode package includes: a substrate, a light-emitting layer disposed on a surface of the substrate and including a first type semiconductor layer, an active layer, and a second type semiconductor layer, a first bump disposed on the first type semiconductor layer and a second bump disposed the second type semiconductor layer, a protective layer covering at least the light-emitting layer, and a first bump pad and a second bump pad disposed on the protective layer and connected to the first bump and the second bump, respectively.