A display apparatus includes a circuit substrate with driving circuits and first bonding electrodes, and a pixel array having LED cells, each of the LED cells including first and second conductivity-type semiconductor layers with an active layer therebetween, second bonding electrodes on the first bonding electrodes, wavelength converters on the LED cells, an upper semiconductor layer on the LED cells and having a partition structure surrounding side snakes of the wavelength converters and separating the wavelength converters, a first reflective electrode on the side surfaces of the LED cells, spaced from the LED cells by a passivation layer, and extending between the LED cells, second reflective electrodes on the lower surfaces of the LED cells and connected to the second conductivity-type semiconductor layers, a common electrode on at least one side of the LED cells, and a pad electrode outside the LED cells and electrically connected to the driving circuits.

A display device includes light-emitting elements arranged on a circuit board, and extending in a thickness direction of the circuit board, wherein the light-emitting elements include a first light-emitting element configured to emit a first light, and a second light-emitting element configured to emit a second light, wherein the first light-emitting element and the second light-emitting element are on different layers, and wherein a width of the first light-emitting element is greater than a width of the second light-emitting element.

A display device may include a substrate including a display area and a non-display area; pixels disposed in the display area; first and second driving voltage lines disposed in the non-display area and spaced apart from each other; a first fan-out line disposed in the non-display area and electrically connected to the first driving voltage line; a second fan-out line disposed in the non-display area and electrically connected to the second driving voltage line; a first power line including at least two first sub-power lines branching off to a corresponding one of the pixels from the first fan-out line; and a second power line including at least two second sub-power lines branching off to a corresponding one of the pixels from the second fan-out line.

A light emitting device includes: a base layer; a first conductive layer on the base layer, and including first and second electrode patterns, and exposing a portion of the base layer at a first area between the first and second electrode patterns; a fine light emitting diode (LED) at the first area; a second conductive layer covering the second electrode pattern and a first side of the fine LED, and contacting the second electrode pattern and the first side of the fine LED; a first insulation layer on the second conductive layer and the fine LED, and partially exposing a second side of the fine LED; and a third conductive layer covering the first electrode pattern and the second side of the fine LED and a portion of a sidewall of the insulation layer, and contacting the first electrode pattern and the second side of the fine LED.

A light emitting device includes: a base layer; a first conductive layer on the base layer, and including first and second electrode patterns, and exposing a portion of the base layer at a first area between the first and second electrode patterns; a fine light emitting diode (LED) at the first area; a second conductive layer covering the second electrode pattern and a first side of the fine LED, and contacting the second electrode pattern and the first side of the fine LED; a first insulation layer on the second conductive layer and the fine LED, and partially exposing a second side of the fine LED; and a third conductive layer covering the first electrode pattern and the second side of the fine LED and a portion of a sidewall of the insulation layer, and contacting the first electrode pattern and the second side of the fine LED.

A light emitting device includes: a plurality of light emitting stacked layers, including a first surface and a second surface, wherein the second surface is electrically opposite to the first surface; a mesa structure; a current blocking layer disposed on the first surface, including a sidewall; and a transparent conductive layer disposed on the first surface; and a first pad electrode, disposed on the transparent conductive layer and on the first surface; wherein a retract distance of the transparent conductive layer with respect to an edge of the mesa structure is less than 3 μm; and wherein a retract distance of the transparent conductive layer with respect to an edge of the sidewall of the current blocking layer is less than 3 μm.

A light emitting device includes: a plurality of light emitting stacked layers, including a first surface and a second surface, wherein the second surface is electrically opposite to the first surface; a mesa structure; a current blocking layer disposed on the first surface, including a sidewall; and a transparent conductive layer disposed on the first surface; and a first pad electrode, disposed on the transparent conductive layer and on the first surface; wherein a retract distance of the transparent conductive layer with respect to an edge of the mesa structure is less than 3 μm; and wherein a retract distance of the transparent conductive layer with respect to an edge of the sidewall of the current blocking layer is less than 3 μm.

A chip-scale package type light emitting diode includes a first conductivity type semiconductor layer, a mesa, a second conductivity type semiconductor layer, a transparent conductive oxide layer, a dielectric layer, a lower insulation layer, a first pad metal layer, and a second pad metal layer, an upper insulation layer. The upper insulation layer covers the first pad metal layer and the second pad metal layer, and includes a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer. The openings of the dielectric layer include openings that have different sizes from one another.

Disclosed is a flip-chip LED, comprising: an epitaxial layer on a surface of a substrate, and comprising a first semiconductor layer, a light emitting layer and a second semiconductor layer arranged in sequence from bottom to top, wherein a mesa in the epitaxial layer has an upper surface provided by the second semiconductor layer, a lower surface provided by the first semiconductor layer, and a side surface connecting the upper surface and the lower surface; a first insulating layer covering the side surface of the mesa, part of the upper surface and part of the lower surface; and a reflective layer on the second semiconductor layer. A manufacturing method of a flip-chip LED is also provided, an insulating layer covers the side surface of the mesa to protect the mesa immediately after the mesa is formed, to avoid abnormal phenomena and improve yield of the flip-chip LED.

A light emitting diode device includes a substrate having a substrate surface, an epitaxial structure having an epitaxial surface opposite to the substrate surface, and a plurality of bridging electrodes disposed on the epitaxial surface. The epitaxial structure includes first, second and third light emitting units spacedly and sequentially disposed on the substrate surface. A projection of the second light emitting unit has a first edge and a second edge that is connected with and perpendicular to the first edge. The epitaxial surface has an operating zone on the second light emitting unit that is adapted to be pushed by an ejector pin. A length of the second edge is equal to or greater than a diameter of the operating zone.