H01L33/38

DISPLAY DEVICE AND TILED DISPLAY DEVICE
20230238372 · 2023-07-27 ·

A display device includes a pixel including a first light emitting element, a second light emitting element, and a third light emitting element that are arranged at equal distances from each other along a first direction, first pixel electrodes arranged along the first direction and contacting the first to third light emitting elements, and second pixel electrodes paired with the first pixel electrodes, arranged along the first direction, and contacting the first to third light emitting elements. Each of the first to third light emitting elements includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and includes a mesa area in which one of the first and second semiconductor layers is partially exposed by another thereof. The mesa area of the first light emitting element is in contact with one of the first pixel electrodes.

DISPLAY DEVICE AND TILED DISPLAY DEVICE
20230238372 · 2023-07-27 ·

A display device includes a pixel including a first light emitting element, a second light emitting element, and a third light emitting element that are arranged at equal distances from each other along a first direction, first pixel electrodes arranged along the first direction and contacting the first to third light emitting elements, and second pixel electrodes paired with the first pixel electrodes, arranged along the first direction, and contacting the first to third light emitting elements. Each of the first to third light emitting elements includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and includes a mesa area in which one of the first and second semiconductor layers is partially exposed by another thereof. The mesa area of the first light emitting element is in contact with one of the first pixel electrodes.

LIGHT EMITTING DIODE MODULE AND LIGHT-EMITTING DIODE MODULE INSPECTION METHOD

A light emitting diode (LED) module includes a substrate layer including an active area and a non-active area excluding the active area, at least one wiring layer provided on the substrate layer, and a test pad connected to the at least one wiring layer and provided in the non-active area.

DISPLAY DEVICE
20230005890 · 2023-01-05 · ·

A display device includes a plurality of first pixels and a plurality of second pixels. Each of the plurality of first pixels includes a first LED chip including a first anode and a first cathode, a second LED chip including a second anode and a second cathode, and a first transistor. One of source and drain electrodes of the first transistor is electrically connected to a first power supply voltage line. The other of the source and drain electrodes is electrically connected to the first anode and the second cathode. The first cathode and the second anode are electrically connected to a second power supply voltage line. A first potential of the first power supply voltage line is different to a second potential of the second power supply voltage line.

DISPLAY DEVICE
20230006113 · 2023-01-05 · ·

A display device includes a first electrode, and LED chip on the first electrode, an insulating layer embeds the first electrode, contacts a side surface of the LED chip, and exposes an upper surface, a second electrode having translucency in contact with an upper surface of the insulating layer and the upper surface of the LED chip, and a first reflection control layer on an upper surface of the second electrode and having a first opening in an area overlapping with the LED chip. The first reflection control layer has a first surface on a side of the second electrode and a second surface on opposite to the first surface, and a reflectance of the first surface is higher than a reflectance of the second surface.

DISPLAY DEVICE
20230006113 · 2023-01-05 · ·

A display device includes a first electrode, and LED chip on the first electrode, an insulating layer embeds the first electrode, contacts a side surface of the LED chip, and exposes an upper surface, a second electrode having translucency in contact with an upper surface of the insulating layer and the upper surface of the LED chip, and a first reflection control layer on an upper surface of the second electrode and having a first opening in an area overlapping with the LED chip. The first reflection control layer has a first surface on a side of the second electrode and a second surface on opposite to the first surface, and a reflectance of the first surface is higher than a reflectance of the second surface.

Light emitting semiconductor device

An embodiment includes a semiconductor device including a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first insulation layer disposed on the semiconductor structure; a first electrode disposed on the first conductive semiconductor layer; a second electrode disposed on the second conductive semiconductor layer; a first cover electrode disposed on the first electrode; a second cover electrode disposed on the second electrode; and a second insulation layer extending from an upper surface of the first cover electrode to an upper surface of the second cover electrode. The semiconductor structure includes a first surface extending from an upper surface of the first conductive semiconductor layer where the first electrode is disposed to a side surface of the active layer and an upper surface of the second conductive semiconductor where the second electrode is disposed. The first insulation layer is disposed on the first surface to be spaced apart from the first electrode. The first insulation layer is disposed on the first surface to overlap with the first cover electrode in a first direction perpendicular to the upper surface of the first conductive semiconductor layer.

Light emitting semiconductor device

An embodiment includes a semiconductor device including a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first insulation layer disposed on the semiconductor structure; a first electrode disposed on the first conductive semiconductor layer; a second electrode disposed on the second conductive semiconductor layer; a first cover electrode disposed on the first electrode; a second cover electrode disposed on the second electrode; and a second insulation layer extending from an upper surface of the first cover electrode to an upper surface of the second cover electrode. The semiconductor structure includes a first surface extending from an upper surface of the first conductive semiconductor layer where the first electrode is disposed to a side surface of the active layer and an upper surface of the second conductive semiconductor where the second electrode is disposed. The first insulation layer is disposed on the first surface to be spaced apart from the first electrode. The first insulation layer is disposed on the first surface to overlap with the first cover electrode in a first direction perpendicular to the upper surface of the first conductive semiconductor layer.

LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

A light emitting device includes a first light transmitting layer, a second light transmitting layer provided on the first light transmitting layer, a plurality of mesa structures provided on the second light transmitting layer and configured to generate light in an ultraviolet band, and passivation patterns provided on side surfaces of the plurality of mesa structures. Each of the plurality of mesa structures includes a first epitaxial pattern including an aluminum gallium nitride, a second epitaxial pattern provided on the first epitaxial pattern and including an aluminum gallium nitride, a third epitaxial pattern provided on the second epitaxial pattern and including an aluminum gallium nitride, and a fourth epitaxial pattern provided on the third epitaxial pattern and including a gallium nitride. A horizontal width of each of the plurality of mesa structures is in a range of about 5 μm to about 30 μm.

DISPLAY DEVICE AND TITLED DISPLAY DEVICE

A display device comprises anode electrodes respectively corresponding to sub-pixels, cathode electrodes respectively corresponding to the sub-pixels and respectively spaced apart from the anode electrodes, a cathode line electrically connected to the cathode electrodes, anode pads respectively overlapping the plurality of anode electrodes in a plan view, cathode pads respectively overlapping the cathode electrodes in a plan view, and a cathode line pad overlapping at least part of the cathode line in a plan view.