A light emitting element includes: a substrate including a first surface including a first region and a second region; a first semiconductor layered body on the first region, the first semiconductor layered body comprising a first light emitting layer and including: a first lateral surface, and a second lateral surface opposite to the first lateral surface; and a second semiconductor layered body on the second region, the second semiconductor layered body comprising a second light emitting layer and including: a first lateral surface facing the second lateral surface and located on a first semiconductor layered body side of the second semiconductor layered body, and a second lateral surface opposite to the first lateral surface and located on a side opposite the first semiconductor layered body side of the second semiconductor layered body.

A light-emitting device includes a semiconductor light-emitting stack and a distributed Bragg reflector (DBR) structure. The semiconductor light-emitting stack includes a light-emitting layer. The DBR structure is disposed on the semiconductor light-emitting stack and includes a plurality of first dielectric material layers and a plurality of second dielectric material layers that are alternately stacked on the semiconductor light-emitting stack. The first dielectric material layer has a first refractive index, and the second dielectric material layer has a second refractive index. The first refractive index is lower than the second refractive index. The second dielectric material layer has an optical thickness that is smaller than that of the first dielectric material layer.

A light-emitting device includes a semiconductor light-emitting stack and a distributed Bragg reflector (DBR) structure. The semiconductor light-emitting stack includes a light-emitting layer. The DBR structure is disposed on the semiconductor light-emitting stack and includes a plurality of first dielectric material layers and a plurality of second dielectric material layers that are alternately stacked on the semiconductor light-emitting stack. The first dielectric material layer has a first refractive index, and the second dielectric material layer has a second refractive index. The first refractive index is lower than the second refractive index. The second dielectric material layer has an optical thickness that is smaller than that of the first dielectric material layer.

According to one embodiment, a display device includes an organic insulating layer, a light reflecting layer, a light emitting element, a sealing layer having an inclined surface having a lower end and an upper end, and a coating layer. An interface between the inclined surface and the coating layer is configured to reflect light traveling through the sealing layer toward the light reflecting layer. The lower end is located below a middle of the light emitting element in a height direction of the light emitting element. The upper end is located above the middle of the light emitting element in the height direction of the light emitting element.

According to one embodiment, a display device includes an organic insulating layer, a light reflecting layer, a light emitting element, a sealing layer having an inclined surface having a lower end and an upper end, and a coating layer. An interface between the inclined surface and the coating layer is configured to reflect light traveling through the sealing layer toward the light reflecting layer. The lower end is located below a middle of the light emitting element in a height direction of the light emitting element. The upper end is located above the middle of the light emitting element in the height direction of the light emitting element.

A light-emitting chip and a method for manufacturing the same are provided. Top surfaces of a first semiconductor layer (11), a first active layer (12), a second semiconductor layer (13) and a substrate (14) included in the light-emitting chip are located on a first horizontal plane, and bottom surfaces of the first semiconductor layer (11), the first active layer (12), the second semiconductor layer (13) and the substrate (14) included in the light-emitting chip are located on a second horizontal plane; and the top surfaces of the first semiconductor layer (11), the first active layer (12), the second semiconductor layer (13) and the substrate (14) serve as light-emitting surfaces.

A light-emitting chip and a method for manufacturing the same are provided. Top surfaces of a first semiconductor layer (11), a first active layer (12), a second semiconductor layer (13) and a substrate (14) included in the light-emitting chip are located on a first horizontal plane, and bottom surfaces of the first semiconductor layer (11), the first active layer (12), the second semiconductor layer (13) and the substrate (14) included in the light-emitting chip are located on a second horizontal plane; and the top surfaces of the first semiconductor layer (11), the first active layer (12), the second semiconductor layer (13) and the substrate (14) serve as light-emitting surfaces.

A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

A display device may include including a first insulating reflective layer including a distributed Bragg reflector above a substrate, a first electrode and a second electrode above the first insulating reflective layer, a second insulating reflective layer including a distributed Bragg reflector above the first electrode and the second electrode, and a light emitting element above the second insulating reflective layer.