A light emitting device includes: a substrate including a base member including an upper surface, a lower surface and one or more lateral surfaces, and defining a recess that is opened at the upper surface and the lateral surfaces and surrounds an outer perimeter of the upper surface; a first light emitting element; a second light emitting element; a light guide member covering the first and the second light emitting elements and the upper surface of the base member; and a first reflective member having a closed-ring shape surrounding the upper surface of the base member and the light guide member, a portion of the first reflective member being located in the recess. At least one of the lateral surfaces of the base member and corresponding at least one of one or more outer lateral surfaces of the first reflective member are in the same plane.

A electronic device is provided. The electronic device includes a circuit board, a first light-emitting element and a second light-emitting element disposed on the circuit board along a first direction. The backlight module includes a light guide plate and an adhesive structure between the circuit board and the light guide plate and having a first opening and a second opening. The first and second light-emitting elements are disposed in the first and second openings respectively. A portion of the adhesive structure disposed between the first and second openings includes a first part and a second part, the first part is disposed between the first and second light-emitting elements, and the second part is connected with the first part and extends toward the light guide plate. A second maximum width of the second part is greater than a first maximum width of the first part along the first direction.

An interconnect for a semiconductor device includes: a carrier; a UV programmable chip mounted on the carrier using a first array of solder connections; a UV light source mounted on the carrier using a second array of solder connections, the UV light source being in optical communication with the UV programmable chip; and a plurality of transmission lines extending on or through the carrier and providing electrical communication between the UV programmable chip and the UV light source.

A method for manufacturing a light-emitting device includes: forming a cover, which comprises: sandwiching a fixing member by a molding device, injecting a light-transmissive material into a space defined in the molding device, and hardening or curing the injected light-transmissive material, wherein the formed cover comprises an upper portion, a sidewall, and a recess, the cover being integrated with the fixing member such that the fixing member projects from a part of an outer lateral surface of the sidewall; disposing a light-transmissive member on a light extraction surface of a light-emitting element to be disposed on a substrate; and disposing the cover so that the light-emitting element is housed in the recess. The fixing member is formed of a material that is deformable due to a pressing force generated in the event of an engagement with a counterpart member.

A light emitting element mounting package includes a substrate, an insulating layer, and a metal layer. The insulating layer includes a through hole penetrating in a thickness direction and is provided on the substrate. The metal layer is disposed on the substrate in at least the through hole, and includes a protruding portion extending from the substrate along an inner wall of the through hole. The protruding portion has the shape of a connected body in which metal particles are connected together. The inner wall of the insulating layer includes, closer to the substrate, an inclined surface where the through hole becomes wider, and the protruding portion contacts the inclined surface.

A light-emitting device includes a circuit substrate, a wall, a light-emitting diode chip, a fluorescent resin and a plate. The wall is formed on the circuit substrate to form a concave cup with properties of light transmission and reflection, and has a height of the wall is H2. The light emitting diode chip is die-bonded on the circuit substrate in the concave cup and a height of the light-emitting diode chip is H1. The fluorescent resin is filled in the concave cup and covered over the light-emitting diode chip. The plate is covered on the fluorescent resin and equipped with properties of light transmission and reflection. A maximum thickness of the plate is H3, wherein H3=A*(H2/H1)+B, a value of A ranges from 10.5 to 15.5, and a value of B ranges from 0.05 to 131.5.

LED lamp systems having improved light quality are disclosed. The lamps emit more than 500 lm and more than 2% of the power in the spectral power distribution is emitted within a wavelength range from about 390 nm to about 430 nm.

An optoelectronic device including light-emitting components, each light-emitting component being adapted to emit a first radiation at a first wavelength, and photoluminescent blocks, each photoluminescent block facing at least one light-emitting component and comprising a single quantum well or multiple quantum wells, photoluminescent blocks being divided into first photoluminescent blocks adapted to convert by optical pumping the first radiation into a second radiation at a second wavelength, second photoluminescent blocks adapted to convert by optical pumping the first radiation into a third radiation at a third wavelength and third photoluminescent blocks adapted to convert by optical pumping the first radiation into a fourth radiation at a fourth wavelength.

This disclosure describes optoelectronic modules with locking assemblies and methods for manufacturing the same. The locking assemblies, in some instances, can improve mounting steps during manufacturing and can increase the useful lifetime of the optoelectronic modules into which they are incorporated. The locking assemblies can include overmold protrusions, and optical element housing protrusions, as well as locking edges incorporated into overmold housing components.

A light-emitting device includes an inner light-emitting element having an n-sided polygonal shape (n is an integer of 3 or more) in a plan view with a peak emission wavelength in a range of 490 nm to 570 nm; m (m is an integer of 3 or more) outer light-emitting elements with a peak emission wavelength of 430 nm or greater and less than 490 nm; and a first phosphor with a peak emission wavelength in a range of 580 nm to 680 nm covering the inner light-emitting element and the m outer light-emitting elements. Each of n lateral surfaces of the inner light-emitting element faces a corresponding one of the m outer light-emitting elements in a top view.