A semiconductor light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) chips. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED structures are disposed on the support surface and form a first main surface where light emitted from with a part of the support surface without the LED structures. Each of the LED structures includes a first electrode and a second electrode. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface. An illumination device includes the semiconductor light emitting element and a supporting base. The semiconductor light emitting element is disposed on the supporting base, and an angle is formed between the semiconductor light emitting element and the supporting base.

A semiconductor light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) chips. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED structures are disposed on the support surface and form a first main surface where light emitted from with a part of the support surface without the LED structures. Each of the LED structures includes a first electrode and a second electrode. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface. An illumination device includes the semiconductor light emitting element and a supporting base. The semiconductor light emitting element is disposed on the supporting base, and an angle is formed between the semiconductor light emitting element and the supporting base.

Emitter packages and LEDs displays utilizing the packages are disclosed, with the packages providing advantages such as reducing the cost and interconnect complexity for the packages and displays. One emitter package comprises a casing with a plurality of cavities, each cavity having at least one LED. A lead frame structure is included integral to the casing, with the at least one LED from each of the cavities mounted to the lead frame structure. The package is capable of receiving electrical signals for independently controlling the emission from a first and second of the cavities. One LED display utilizes the LED packages mounted in relation to one another to generate a message or image. The LED packages comprise multiple pixels each having at least one LED, with each package capable of receiving electrical signals for independently controlling the emission of at least a first and second of the pixels.

A light guide plate which includes a light incident surface, a light conversion element, an accommodation through hole and a diffusion element, the accommodation through hole is formed in the light guide plate and is adjacent to the light incident surface, the light conversion element is accommodated in the accommodation through hole, and the diffusion element is disposed on the light incident surface. Also disclosed is a light having a backlight module and a liquid crystal display having the light guide plate. A light conversion element is accommodated in the light guide plate, so as to avoid over-heating the light conversion element to further avoid reducing the color gamut of the product.

Quantum dot polymer composites for on-chip light emitting diode applications are described. In an example, a composite for on-chip light emitting diode application includes a polymer matrix, a plurality of quantum dots dispersed in the polymer matrix, and a base dispersed in the polymer matrix.

An optoelectronic semiconductor component and a method for producing the same are disclosed. In an embodiment the semiconductor component includes a semiconductor chip, which emits electromagnetic radiation of a first wavelength range from a radiation emission surface. The semiconductor component further includes a first conversion layer located on a lateral flank of the semiconductor chip, wherein the first conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, and a second conversion layer located on the radiation emission surface of the semiconductor chip, wherein the second conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of the second or of a third wavelength range. The first conversion layer is different from the second conversion layer.

This disclosure is related to photo-stable chromophores which are useful in various applications. Chromophores disclosed herein include a bis-triazole core, two electron-donors at C-4 and C-8, and two groups derived from pentaerythritol (R═OR.sup.5) or 1,1,1-tris(hydroxymethyl)methane (R═H) at N-2 and N-6. Such structures have been proven to have greater then five times higher photo-stability than their analogs with simpler alkyl groups at N-2 and N-6.

A light emitting device includes: a first support member having an opening; a second support member disposed in the opening of the first support member; an adhesive member disposed between the first and second support members; a first lead electrode disposed on the second support member; a second lead electrode disposed on at least one of the first and second support members; a light emitting chip disposed on the first lead electrode, the light emitting chip being electrically connected to the second lead electrode; and a conductive layer disposed under the second support member, wherein the first support member includes a resin material, the second support member includes a ceramic material, and the first lead electrode is disposed between the light emitting chip and the second support member.

A light emitting device includes: a first support member having an opening; a second support member disposed in the opening of the first support member; an adhesive member disposed between the first and second support members; a first lead electrode disposed on the second support member; a second lead electrode disposed on at least one of the first and second support members; a light emitting chip disposed on the first lead electrode, the light emitting chip being electrically connected to the second lead electrode; and a conductive layer disposed under the second support member, wherein the first support member includes a resin material, the second support member includes a ceramic material, and the first lead electrode is disposed between the light emitting chip and the second support member.

Provided is a wavelength conversion member including a ceramic layer as a reflective layer and having excellent luminescence intensity and a light emitting device using the same. A wavelength conversion member 10 including: a first porous ceramic layer 1 having a porosity of 20% by volume or more; and a phosphor layer 2 formed on a principal surface 1a of the first porous ceramic layer 1.