A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2˜150.

A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2˜150.

A light-emitting diode (LED) and a backlight-type display device are provided. The light-emitting diode includes: a multi-color light emitting chip, an emission spectrum thereof including a first peak in a wavelength range of a first primary-color light and a second peak in a wavelength range of a second primary-color light, and an absolute value of a wavelength difference between the first and second peaks being greater than 50 nm; and a phosphor-containing layer, disposed over the multi-color light emitting chip and used to be excited to emit a third primary-color light. Owing to the LED adopts the multi-color light emitting chip which has the first and second peaks in different wavelength ranges and the absolute valve of the wavelength difference is greater than 50 nm, RGB three-primary-color lights can be outputted by adopting a single-color light phosphor powder with relatively high reliability. The backlight-type display device can obtain a high NTSC level.

Solid state light fixtures include a plurality of blue-shifted-yellow/green light emitting diode (“LED”) packages and a plurality of blue-shifted-red LED packages, where the solid state light fixture emits light having a correlated color temperature of between 1800 K and 5500 K, a CRI value of between 80 and 99, a CRI R9 value of between 15 and 75, and a Qg value of between 90 and 110 when the blue-shifted-yellow/green LED packages and the blue-shifted-red LED packages are operating at steady-state operating temperatures of at least 80° C.

A light emitting device includes a light emitting element adapted to emit blue light, quantum dots that absorb part of the blue light emitted from the light emitting element to emit green light, and at least one of a KSF phosphor adapted to absorb part of the blue light emitted from the light emitting element to emit red light and a MGF phosphor adapted to absorb part of the blue light emitted from the light emitting element to emit red light.

A light-emitting unit is provided. The light-emitting unit includes a light-emitting element, a light conversion layer, and a color filter layer. The light conversion layer is disposed on the light-emitting element. The color filter layer covers the sidewalls of the light conversion layer. In addition, the light-emitting unit further includes a protection layer located between the color filter layer and the light conversion layer.

A light-emitting unit is provided. The light-emitting unit includes a light-emitting element, a light conversion layer, and a color filter layer. The light conversion layer is disposed on the light-emitting element. The color filter layer covers the sidewalls of the light conversion layer. In addition, the light-emitting unit further includes a protection layer located between the color filter layer and the light conversion layer.

The present disclosure relates to the field of display technology, and provides an OLED display substrate, a manufacturing method and a display device. The OLED display substrate includes: a base substrate; an active layer arranged on the base substrate; a gate insulation layer arranged at a side of the active layer away from the base substrate; and a gate electrode layer arranged at a side of the gate insulation layer away from the base substrate. An orthogonal projection of the gate electrode layer onto the base substrate at least partially overlaps an orthogonal projection of the active layer onto the base substrate, and the gate electrode layer and the active layer form a first storage capacitor of the OLED display substrate.

A light emitting device including a blue light emitting portion configured to emit blue light, a green light emitting portion configured to emit green light, a red light emitting portion configured to emit red light, in which the blue light emitting portion include a first near-UV light emitting diode chip and a first wavelength conversion portion for wavelength conversion of near-UV light emitted from the first near-UV light emitting diode chip, blue light emitted from the blue light emitting portion includes a first peak wavelength in a wavelength band corresponding to near-UV light and a second peak wavelength in a wavelength band corresponding to blue light, and an intensity of the first peak wavelength is in a range of 0% to 20% of intensity of the second peak wavelength.

A light-emitting device includes a support; a light-emitting element on or above the support; a first wavelength conversion member on or above the light-emitting element, the first wavelength conversion member having an area larger than that of the light-emitting element in a top view; a first light-transmissive member covering a lower surface of an extension region of the first wavelength conversion member an a lateral surface of the light-emitting element; a first light-reflective member on lateral sides of the first wavelength conversion member and the first light-transmissive member; and a second wavelength conversion member disposed on or above the first wavelength conversion member. A thickness of the second wavelength conversion member above a peripheral portion of the first wavelength conversion member is smaller than a thickness of the second wavelength conversion member above a central portion of the first wavelength conversion member.