A display apparatus including: a plurality of display modules, each including a substrate and inorganic light emitting diodes mounted on a mounting surface of the substrate; a cover layer configured to cover the mounting surface of each of the display modules; and an adhesive layer arranged between the cover layer and the mounting surface of each of the display modules to cause the cover layer to adhere to the mounting surface of each of the display modules, wherein the adhesive layer includes a first region, disposed on a gap formed between the plurality of display modules, and a second region disposed on the mounting surface of each of the display modules, and wherein the adhesive layer includes a photosensitive material such that the first region of the adhesive layer is configured to undergo a photosensitive reaction based on an external light source.

A light emitting device includes a substrate including first, second, third and fourth wiring portions on a top surface of a base member and arrayed in a first direction, and a connection wiring portion connecting the second and third wiring portions. The connection wiring portion includes first and second connection ends respectively connected with the second and third wiring portions, and a connection central portion connecting the first and second connection ends and having a maximum width in a second direction different from each of a maximum width of the first connection end and a maximum width of the second connection end. In the second direction, at least a part of the connection wiring portion has a width narrower than each of a maximum width of the second wiring portion and a maximum width of the third wiring portion.

A light emitting device includes a substrate including first, second, third and fourth wiring portions on a top surface of a base member and arrayed in a first direction, and a connection wiring portion connecting the second and third wiring portions. The connection wiring portion includes first and second connection ends respectively connected with the second and third wiring portions, and a connection central portion connecting the first and second connection ends and having a maximum width in a second direction different from each of a maximum width of the first connection end and a maximum width of the second connection end. In the second direction, at least a part of the connection wiring portion has a width narrower than each of a maximum width of the second wiring portion and a maximum width of the third wiring portion.

An embodiment of the present invention provides an element transferring method that may increase a yield of transferring an element, and an electronic panel manufacturing method using the same. The element transferring method includes: preparing a carrier film in which a first surface of an element on which a terminal is formed is adhered to an adhesive surface; providing a cover adhesive layer on the adhesive surface so that the second surface of the element that is opposite to the first surface and where the terminal is not formed is covered; transferring the element to the target substrate by adhering the cover adhesive layer to the target substrate while the second surface is facing the target substrate; and separating the carrier film from the element, wherein in transferring the element, the carrier film is pressed so that the surface of the cover adhesive layer is flat at the same height as the terminal.

An embodiment of the present invention provides an element transferring method that may increase a yield of transferring an element, and an electronic panel manufacturing method using the same. The element transferring method includes: preparing a carrier film in which a first surface of an element on which a terminal is formed is adhered to an adhesive surface; providing a cover adhesive layer on the adhesive surface so that the second surface of the element that is opposite to the first surface and where the terminal is not formed is covered; transferring the element to the target substrate by adhering the cover adhesive layer to the target substrate while the second surface is facing the target substrate; and separating the carrier film from the element, wherein in transferring the element, the carrier film is pressed so that the surface of the cover adhesive layer is flat at the same height as the terminal.

The invention relates to a component (100) having an electrically insulating and radiation-transparent substrate (9) and at least one semiconductor chip (10) arranged on the substrate (9). The semiconductor chip (10) is designed to generate electromagnetic radiation and has a front side (11) and a rear side (12) facing away from the front side (11), wherein the front side (11) of the semiconductor chip (10) faces the substrate (9) and is designed as a radiation exit face of the semiconductor chip (10), and wherein the rear side (12) of the semiconductor chip (10) faces away from the substrate (9), wherein the semiconductor chip (10) can be electrically contacted externally via the rear side (12). The invention further relates to a method for producing such a component.

A display device includes a first electrode, a second electrode disposed spaced apart from the first electrode in a first direction, and an element part disposed between the first electrode and the second electrode. The element part includes light-emitting elements that have a shape extending in one direction and are arranged spaced apart from each other in a second direction perpendicular to the first direction; and a binder surrounding each of the light-emitting elements and fixing the light-emitting elements. The one direction in which the light-emitting elements extend is parallel to the first direction.

A semiconductor light-emitting device includes a GaAs (gallium arsenide) substrate of a cubic crystal, a light-emitting layer and a multi-semiconductor layer. The light-emitting layer being provided on the GaAs substrate. The light-emitting layer includes InGaAs (indium gallium arsenide) represented by a compositional formula InxGa1-xAs (0<x<1). The multi-semiconductor layer being provided on a front surface of the GaAs substrate between the GaAs substrate and the light-emitting layer. The multi-semiconductor layer is tilted with respect to a (100) plane of the cubic crystal. The multi-semiconductor layer includes a first layer and a second layer. The first and second layers are alternately stacked in a direction perpendicular to the front surface of the GaAs substrate. The first layer is different in composition from the second layer.

A semiconductor light-emitting device includes a GaAs (gallium arsenide) substrate of a cubic crystal, a light-emitting layer and a multi-semiconductor layer. The light-emitting layer being provided on the GaAs substrate. The light-emitting layer includes InGaAs (indium gallium arsenide) represented by a compositional formula InxGa1-xAs (0<x<1). The multi-semiconductor layer being provided on a front surface of the GaAs substrate between the GaAs substrate and the light-emitting layer. The multi-semiconductor layer is tilted with respect to a (100) plane of the cubic crystal. The multi-semiconductor layer includes a first layer and a second layer. The first and second layers are alternately stacked in a direction perpendicular to the front surface of the GaAs substrate. The first layer is different in composition from the second layer.

Provided is an electronic device including a substrate, a first metal layer, an electronic component, a cover layer, and an adhesive layer. The first metal layer is formed on the substrate. The electronic component is disposed on the substrate and electrically connected to the first metal layer. The adhesive layer is adhered to the substrate and the cover layer.