A microelectronic device includes a die less than 300 microns thick, and an interface tile. Die attach leads on the interface tile are electrically coupled to die terminals on the die through interface bonds. The microelectronic device includes an interposer between the die and the interface tile. Lateral perimeters of the die, the interposer, and the interface tile are aligned with each other. The microelectronic device may be formed by forming the interface bonds and an interposer layer, while the die is part of a wafer and the interface tile is part of an interface lamina. Kerfs are formed through the interface lamina, through the interposer, and partway through the wafer, around a lateral perimeter of the die. Material is subsequently removed at a back surface of the die to the kerfs, so that a thickness of the die is less than 300 microns.

A semiconductor package includes an encapsulation layer encapsulating at least one semiconductor chip, and a redistribution level layer disposed on the encapsulation layer. The redistribution level layer includes a redistribution layer and a redistribution insulating layer insulating the redistribution layer, a laser mark area is disposed on the redistribution layer and the redistribution insulating layer, and the redistribution insulating layer of the laser mark area comprises a plurality of mesh-type redistribution insulating patterns arranged apart from each other on a plane and surrounded by the redistribution layer. The redistribution level layer includes a laser mark insulating layer located on the redistribution layer and the redistribution insulating layer, wherein the laser mark insulating layer includes a laser mark exposing the redistribution layer and the mesh-type redistribution insulating patterns in the laser mark area.

A semiconductor package is provided. The semiconductor package includes: a first redistribution substrate; a semiconductor chip provided on the first redistribution substrate; a molding layer provided on the first redistribution substrate and the semiconductor chip; and a second redistribution substrate provided on the molding layer. The second redistribution substrate includes: redistribution patterns spaced apart from one another; a first dummy conductive pattern spaced apart from the redistribution patterns; an insulating layer provided on the first dummy conductive pattern; and a marking metal layer provided on the insulating layer and spaced apart from the first dummy conductive pattern. Sidewalls of the marking metal layer overlap the first dummy conductive pattern along a vertical direction perpendicular to an upper surface of the first redistribution substrate.

An RFIC module is provided that includes a base material; an RFIC mounted on the base material; antenna-side terminal electrodes formed on the base material and constructed to be connected to or coupled to an antenna; and an insulating protective film that covers a first surface of the base material and the RFIC, with the protective film being made of a hot melt resin.

A semiconductor device and a method of manufacturing a semiconductor device. The chip scale package semiconductor device comprises: a semiconductor die having a first major surface and an opposing second major surface, the semiconductor die comprising at least two terminals arranged on the second major surface; a carrier comprising a first major surface and an opposing second major surface, wherein the first major surface of the semiconductor die is mounted on the opposing second major surface of the carrier; and a molding material partially encapsulating the semiconductor die and the carrier, wherein the first major surface of the carrier extends and is exposed through molding material, and the at least two terminals are exposed through molding material on a second side of the device.

In an embodiment, a semiconductor package is provided that includes a first package surface and a second package surface opposing the first surface, a plastic molding and one or more semiconductor dies. The first package surface includes a first surface of the plastic molding and a first metallic area exposed from the plastic molding. The first metallic area includes a first product marking including at least one alphanumeric character and the first surface of the plastic molding includes a second product marking including at least one alphanumeric character.

A semiconductor package includes; a chip structure including vertically stacked semiconductor chips disposed on a package substrate, a spacer disposed on an uppermost semiconductor chip among the semiconductor chips, an encapsulant covering at least part of the chip structure, and including an upper portion of the encapsulant covering at least part of the spacer, and a marking pattern visually identifiable through an opening in the upper portion of the encapsulant selectively exposing portions of the spacer.

An integrated device package is disclosed. The integrated device package can include a carrier, an electronic component mounted on the carrier, a molding material disposed over the carrier, and an electromagnetic interference shield layer disposed over the molding material. The electronic component is at least partially disposed in the molding material. The electromagnetic interference shield layer is configured to shield the electronic component from a radio frequency signal. The electromagnetic interference shield layer has a thickness in a range between 2 μm and 6 μm. A surface of the electromagnetic interference shield layer includes an ink mark that has a thickness in a range between 5 μm and 15 μm, or a laser mark that has a depth in a range between 1 μm and 2 μm.

An integrated device package is disclosed. the integrated device package can include a carrier, an electronic component mounted on the carrier, a molding material disposed over the carrier, and an electromagnetic interference shield layer disposed over the molding material. The electronic component is at least partially disposed in the molding material. At least a portion of the shield layer is in contact with the electronic component. The electromagnetic interference shield layer is configured to shield the electronic component from a radio frequency signal. A surface of the electromagnetic interference shield layer includes an ink mark or a laser mark.

An electronic apparatus includes a display panel including a base substrate including an active area and a peripheral area adjacent to the active area, pixels on the active area, pads on the peripheral area and arranged in a first direction, signal lines connecting the pixels to the pads, and a vernier mark on the peripheral area and spaced apart from the pads and the signal lines, a circuit board on the display panel and including a base film, and leads on the base film and overlapping with the pads in a plan view, and a conductive adhesive member extending in the first direction and between the display panel and the circuit board to connect the pads to the leads. The conductive adhesive member overlaps with the vernier mark when viewed in a second direction intersecting the first direction.