H01L2223/54413

ELECTROMAGNETIC INTERFERENCE (EMI) SHIELDED INTEGRATED DEVICE PACKAGE
20230345684 · 2023-10-26 ·

An integrated device package is disclosed. The integrated device package can include a carrier, an electronic component mounted on the carrier, a molding material disposed over the carrier, and an electromagnetic interference shield layer disposed over the molding material. The electronic component is at least partially disposed in the molding material. The electromagnetic interference shield layer is configured to shield the electronic component from a radio frequency signal. The electromagnetic interference shield layer has a thickness in a range between 2 μm and 6 μm. A surface of the electromagnetic interference shield layer includes an ink mark that has a thickness in a range between 5 μm and 15 μm, or a laser mark that has a depth in a range between 1 μm and 2 μm.

INTEGRATED DEVICE PACKAGE WITH REDUCED THICKNESS
20230345685 · 2023-10-26 ·

An integrated device package is disclosed. the integrated device package can include a carrier, an electronic component mounted on the carrier, a molding material disposed over the carrier, and an electromagnetic interference shield layer disposed over the molding material. The electronic component is at least partially disposed in the molding material. At least a portion of the shield layer is in contact with the electronic component. The electromagnetic interference shield layer is configured to shield the electronic component from a radio frequency signal. A surface of the electromagnetic interference shield layer includes an ink mark or a laser mark.

Direct transfer apparatus for a pattern array of semiconductor device die
11462433 · 2022-10-04 · ·

An apparatus includes a transfer element that is disposed adjacent the wafer tape. A tip end of the transfer element has a footprint sized so as to span across a group of dies on the wafer tape. An actuator is connected to the transfer element to move the transfer element to a die transfer position at which the transfer element presses on the wafer tape to press the group of dies into contact with a circuit trace on the product substrate.

Method and system for mass assembly of thin-film materials

Sheets of a thin film material are attached to a carrier wafer. The carrier wafer and the attached sheets of thin film material are separated to form chiplet carriers. Each chiplet carrier includes a portion of the sheets of thin film material attached to a portion of the carrier wafer. The chiplet carriers are placed on an assembly surface in a random pattern. The chiplet carriers are arranged from the random pattern to a predetermined pattern, and the portions of the thin film material are transferred from the chiplet carriers to a target substrate.

Semiconductor package having a reinforcement layer
11450644 · 2022-09-20 · ·

A semiconductor package is provided. The semiconductor package may include a substrate, a chip stack disposed on the substrate, the chip stack including a plurality of semiconductor chips, a plurality of bonding wires electrically connecting the substrate to the plurality of semiconductor chips, a reinforcement layer disposed on the chip stack, and a molding layer surrounding side surfaces of the chip stack and the bonding wires and contacting side surfaces of the reinforcement layer. The reinforcement layer may include a lower layer including an adhesive, an intermediate layer disposed on the lower layer, and an upper layer disposed on the intermediate layer. The intermediate layer may have elongation in a range of 5% to 70%. The upper layer may have elongation less than 5%.

Mask design for improved attach position

A semiconductor device has a semiconductor package including a substrate with a land grid array. A component is disposed over the substrate. An encapsulant is deposited over the component. The land grid array remains outside the encapsulant. A metal mask having a fiducial marker is disposed over the land grid array. A shielding layer is formed over the semiconductor package. The metal mask is removed after forming the shielding layer.

BARCODED END FACET PRINTED PHOTONIC CHIP AND BARCODE-GUIDED DIRECT LASER WRITING
20220083755 · 2022-03-17 ·

A barcoded end facet printed photonic chip includes: an optically transparent direct laser writing substrate including a transverse waveguide writing surface to receive a direct write laser light for off-axis direct write laser printing and a facet surface to receive the direct write laser light for on-axis direct write laser printing of a barcode-guided direct laser written optical coupling on the facet surface; a waveguide disposed in the optically transparent direct laser writing substrate and in optical communication with the facet surface; and an optically visible bulk impregnated barcode disposed in the optically transparent direct laser writing substrate arranged proximate to the waveguide and in optical communication with the facet surface.

SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME
20220068818 · 2022-03-03 ·

A semiconductor package includes a first semiconductor device on a first redistribution substrate, a first mold layer that covers the first semiconductor device and the first redistribution substrate, and a second redistribution substrate on the first mold layer, the second redistribution substrate including a first opening that exposes a top surface of the first mold layer, a sidewall of the second redistribution substrate that is exposed to the first opening having a stepwise structure.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
20230395522 · 2023-12-07 · ·

A semiconductor device according to the present embodiment includes a resin layer, ink, and a film. The ink is provided on an upper surface of the resin layer. The film coats the resin layer and the ink. Surface roughnesses of the film are different between in a first region where the ink is provided and in a second region where the ink is not provided.

Method for improved transfer of semiconductor die

A system to effectuate improved transfer of semiconductor die. A first frame secures a first substrate having the semiconductor die. A second frame secures a second substrate adjacent the first substrate. A needle is disposed adjacent to the first frame. The needle includes: a longitudinal surface extending in a direction toward the second frame, and a base end having a cross-sectional dimension being based, at least in part, on a cross-sectional dimension of the semiconductor die. A needle actuator is operably connected to the needle and is configured to actuate the needle such that, during the transfer operation, when the first substrate is secured in the first frame and the second substrate is secured in the second frame, the needle presses the semiconductor die into contact with the second substrate so as to transfer the semiconductor die onto the second substrate.