H01L2223/54433

Optically clear thermal spreader for status indication within an electronics package

A system is disclosed that includes an electronic package. The electronic package includes a package base couplable to a host substrate, and a package lid mechanically coupled to the package base that includes one or more transparent lid areas, configured to permit transmission of light. The electronic package further includes a thermal spreader bonded on a first side to a first side of the package lid. The thermal spreader includes one or more transparent spreader areas that are configured to allow transmission of light through the thermal spreader. The electronic package further includes one or more integrated circuits bonded to a second side of the thermal spreader that communicatively coupled to the host substrate. The electronic package further includes one or more optical paths that include at least one of the one or more transparent spreader areas configured adjacent to at least one of the transparent lid areas.

SEMICONDUCTOR PACKAGES WITH INDICATIONS OF DIE-SPECIFIC INFORMATION
20230121141 · 2023-04-20 ·

Semiconductor device packages and associated methods are disclosed herein. In some embodiments, the semiconductor device package includes (1) a first surface and a second surface opposite the first surface; (2) a semiconductor die positioned between the first and second surfaces; and (3) an indication positioned in a designated area of the first surface. The indication includes a code presenting information for operating the semiconductor die. The code is configured to be read by an indication scanner coupled to a controller.

PROCESSING APPARATUS

A processing apparatus includes a wafer table that supports a wafer, a frame table that supports an annular frame, a first tape pressure bonding unit that includes a first pressure bonding roller for executing pressure bonding of a tape to the annular frame, and a second tape pressure bonding unit that includes a second pressure bonding roller for executing pressure bonding of the tape of the tape-attached annular frame to a front surface or a back surface of the wafer. A first heating unit is disposed in one of or both the frame table and the first pressure bonding roller, while a second heating unit is disposed in one of or both the wafer table and the second pressure bonding roller.

METHOD FORMING A SEMICONDUCTOR PACKAGE DEVICE

A method forming a semiconductor package device includes: providing a substrate; forming a flip chip die on a first side on the substrate; and forming a molding compound on the first side of the substrate. The molding compound covers the flip chip die. The method further includes forming a heat sink on the molding compound; and forming a taping layer on a second side of the substrate, wherein the second side is opposite from the first side in a vertical direction. After forming the taping layer, the method further includes performing a pre-cut process and an etching process on the heat sink; and removing the taping layer.

Support substrates, methods of fabricating semiconductor packages using the same, and methods of fabricating electronic devices using the same

Disclosed are support substrates, methods of fabricating semiconductor packages using the same, and methods of fabricating electronic devices using the same. The support substrate comprises a main body, and a plurality of first protrusions finely protruding from an upper surface of the main body. The main body and the first protrusions include the same material and are formed as a unitary structure. The first protrusions are spaced apart from each other in first and second directions intersecting each other, when viewed in plan.

METHOD OF PRINTING LASER MARK AND METHOD OF PRODUCING LASER-MARKED SILICON WAFER
20220331906 · 2022-10-20 · ·

Provided is a laser mark printing method and a method of producing a laser-marked silicon wafer that can reduce the machining strain left around dots constituting a laser mark. In a method of printing a laser mark having a plurality of dots on a silicon wafer, the plurality of dots are formed using laser light having a wavelength in the ultraviolet region.

Semiconductor Package Using A Coreless Signal Distribution Structure
20230103298 · 2023-04-06 ·

A semiconductor package using a coreless signal distribution structure (CSDS) is disclosed and may include a CSDS comprising at least one dielectric layer, at least one conductive layer, a first surface, and a second surface opposite to the first surface. The semiconductor package may also include a first semiconductor die having a first bond pad on a first die surface, where the first semiconductor die is bonded to the first surface of the CSDS via the first bond pad, and a second semiconductor die having a second bond pad on a second die surface, where the second semiconductor die is bonded to the second surface of the CSDS via the second bond pad. The semiconductor package may further include a metal post electrically coupled to the first surface of the CSDS, and a first encapsulant material encapsulating side surfaces and a surface opposite the first die surface of the first semiconductor die, the metal post, and a portion of the first surface of the CSDS.

SUBSTRATE HAVING A METAL LAYER COMPRISING A MARKING
20230104665 · 2023-04-06 ·

A method of marking information on a substrate for use in a semiconductor component is provided. The method comprises providing a substrate for use in a semiconductor component, providing a metal layer on a surface of the substrate, and providing a marking within the metal layer. A method of making a die, a radio-frequency module and a wireless mobile device; as well as a substrate, a die, a radio-frequency module and a wireless mobile device is also provided.

LASER DICING SYSTEM AND METHOD FOR DICING SEMICONDUCTOR STRUCTURE

A laser dicing system is disclosed. The laser dicing system includes a host device and a laser source. The host device reads and identifies a mark formed on a surface of a semiconductor structure. The laser source is coupled to the host device and is configured to generate a dicing laser energy to form a trench on the semiconductor structure. The dicing laser energy irradiated on the semiconductor structure is adjustable based on information embedded in the mark.

Semiconductor substrate crack mitigation systems and related methods

Implementations of a method for healing a crack in a semiconductor substrate may include identifying a crack in a semiconductor substrate and heating an area of the semiconductor substrate including the crack until the crack is healed.