Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method comprises forming a plurality of semiconductor devices over a central region of a semiconductor wafer. The semiconductor wafer comprises a peripheral region laterally surrounding the central region and a circumferential edge disposed within the peripheral region. The semiconductor wafer comprises a notch disposed along the circumferential edge. Forming a stack of inter-level dielectric (ILD) layers over the semiconductor devices and laterally within the central region. Forming a bonding support structure over the peripheral region such that the bonding support structure comprises a bonding structure notch disposed along a circumferential edge of the bonding support structure. Forming the bonding support structure includes disposing the semiconductor wafer over a lower plasma exclusion zone (PEZ) ring that comprises a PEZ ring notch disposed along a circumferential edge of the lower PEZ ring.

A method of correcting a misalignment of a wafer on a wafer holder and an apparatus for performing the same are disclosed. In an embodiment, a semiconductor alignment apparatus includes a wafer stage; a wafer holder over the wafer stage; a first position detector configured to detect an alignment of a wafer over the wafer holder in a first direction; a second position detector configured to detect an alignment of the wafer over the wafer holder in a second direction; and a rotational detector configured to detect a rotational alignment of the wafer over the wafer holder.

A semiconductor wafer processing susceptor for holding a wafer having an orientation notch during deposition of a layer on the wafer, having a placement surface for supporting the semiconductor wafer in the rear edge region of the wafer, the placement surface having a stepped outer delimitation, and an indentation of the outer delimitation of the placement surface for placement of the partial region of the edge region of the rear side of the wafer in which the orientation notch is located onto a partial region of the placement surface delimited by the indentation of the outer delimitation of the placement surface. The susceptor is used in a method for depositing a layer on a wafer having an orientation notch, and wafers made of monocrystalline silicon upon which layers are deposited using the susceptor have greater local flatness on both front and rear sides proximate the orientation notch.

Some embodiments include an integrated assembly having a base supporting first circuitry and first conductive lines. The first conductive lines extend along a first direction and are associated with the first circuitry. A deck is over the base and supports an array of memory cells and second conductive lines which are associated with the array of memory cells. The second conductive lines extend along a second direction which is substantially orthogonal to the first direction. Vertical interconnects extend from the deck to the base and couple the first conductive lines to the second conductive lines. Each of the vertical interconnects couples one of the first conductive lines to one of the second conductive lines. Each of the second conductive lines is coupled with only one of the first conductive lines.

A method is provided for the selective harvest of microLED devices from a carrier substrate. Defect regions are predetermined that include a plurality of adjacent defective microLED devices on a carrier substrate. A solvent-resistant binding material is formed overlying the predetermined defect regions and exposed adhesive is dissolved with an adhesive dissolving solvent. Non-defective microLED devices located outside the predetermined defect regions are separated from the carrier substrate while adhesive attachment is maintained between the microLED devices inside the predetermined defect regions and the carrier substrate. Methods are also provided for the dispersal of microLED devices on an emissive display panel by initially optically measuring a suspension of microLEDs to determine suspension homogeneity and calculate the number of microLEDs per unit volume. If the number of harvested microLED devices in the suspension is known, a calculation can be made of the number of microLED devices per unit of suspension volume.

A method is provided for the selective harvest of microLED devices from a carrier substrate. Defect regions are predetermined that include a plurality of adjacent defective microLED devices on a carrier substrate. A solvent-resistant binding material is formed overlying the predetermined defect regions and exposed adhesive is dissolved with an adhesive dissolving solvent. Non-defective microLED devices located outside the predetermined defect regions are separated from the carrier substrate while adhesive attachment is maintained between the microLED devices inside the predetermined defect regions and the carrier substrate. Methods are also provided for the dispersal of microLED devices on an emissive display panel by initially optically measuring a suspension of microLEDs to determine suspension homogeneity and calculate the number of microLEDs per unit volume. If the number of harvested microLED devices in the suspension is known, a calculation can be made of the number of microLED devices per unit of suspension volume.

An element chip manufacturing method including: preparing a semiconductor substrate including a first layer having a first principal surface, and a second layer having a second principal surface, the first layer provided with element regions, a dicing region, and an alignment mark, wherein the first layer includes a semiconductor layer, and the second layer includes a metal layer adjacent to the semiconductor layer; irradiating a first laser beam absorbed in the metal film and passing through the semiconductor layer, from the second principal surface side to a first region corresponding to the mark; imaging the semiconductor substrate from the second principal surface side with a camera, and then calculating a second region corresponding to the dicing region on the second principal surface; irradiating a second laser beam to the second region from the second principal surface side; and dicing the semiconductor substrate into a plurality of element chips.

A method is provided for the selective harvest of microLED devices from a carrier substrate. Defect regions are predetermined that include a plurality of adjacent defective microLED devices on a carrier substrate. A solvent-resistant binding material is formed overlying the predetermined defect regions and exposed adhesive is dissolved with an adhesive dissolving solvent. Non-defective microLED devices located outside the predetermined defect regions are separated from the carrier substrate while adhesive attachment is maintained between the microLED devices inside the predetermined defect regions and the carrier substrate. Methods are also provided for the dispersal of microLED devices on an emissive display panel by initially optically measuring a suspension of microLEDs to determine suspension homogeneity and calculate the number of microLEDs per unit volume. If the number of harvested microLED devices in the suspension is known, a calculation can be made of the number of microLED devices per unit of suspension volume.

A method is provided for the selective harvest of microLED devices from a carrier substrate. Defect regions are predetermined that include a plurality of adjacent defective microLED devices on a carrier substrate. A solvent-resistant binding material is formed overlying the predetermined defect regions and exposed adhesive is dissolved with an adhesive dissolving solvent. Non-defective microLED devices located outside the predetermined defect regions are separated from the carrier substrate while adhesive attachment is maintained between the microLED devices inside the predetermined defect regions and the carrier substrate. Methods are also provided for the dispersal of microLED devices on an emissive display panel by initially optically measuring a suspension of microLEDs to determine suspension homogeneity and calculate the number of microLEDs per unit volume. If the number of harvested microLED devices in the suspension is known, a calculation can be made of the number of microLED devices per unit of suspension volume.

A glass substrate is laminated with a substrate containing silicon to thereby form a laminated substrate. The glass substrate has a concave surface and a convex surface and has one or more marks that distinguish between the concave surface and the convex surface.