An alignment mark, a semiconductor device, and fabrication methods of the alignment mark and the semiconductor device are provided. The method includes providing a first base substrate, and forming a plurality of alignment marks on the first base substrate. The method also includes dicing the first base substrate to form a plurality of alignment dies. Each alignment die includes a diced first base substrate and at least one alignment mark diced from the plurality of alignment marks on the diced first base substrate. In addition, the method includes providing a second base substrate for aligning, and forming a bonding film on the second base substrate. Further, the method includes attaching an alignment die of the plurality of alignment dies to the bonding film on an alignment region of the second base substrate using a die attach process.

In some embodiments, the present disclosure relates to a method that includes aligning a stealth laser apparatus over a wafer using an infrared camera coupled to the stealth laser apparatus. The stealth laser apparatus is used to form a stealth damage region within the wafer that is continuously connected around the wafer and separates an inner region from an outer region of the wafer. The stealth damage region is also arranged at a first distance from an edge of the wafer and extends from a first depth to a second depth beneath a top surface of the wafer. Further, the method includes forming a groove in the wafer to separate the outer region from the inner region of the wafer. The outer region of the wafer is removed using a blade, and a top portion of the inner region of the wafer is removed using a grinding apparatus.

A method for determining overlay measurements includes orienting a wafer to align portions of lines of a pattern of an overlay mark with a direction in which a source emits light at the wafer and align other portions of the lines of the pattern to extend in a direction perpendicular to the direction in which the illumination source emits light at the wafer. The method includes capturing at least one image of the wafer via an imager sensor. The method also includes determining contrasts of regions of the overlay mark and determining a location of the overlay mark. Overlay marks include a pattern defining an array of columns. Each column includes a set of continuous lines oriented parallel to each other and extending in a first direction within a first region of a column and extending in a second different direction in a second region of the column.

A semiconductor wafer has a base material with a first thickness and first and second surfaces. A wafer scribe mark is disposed on the first surface of the base material. A portion of an interior region of the second surface of the base material is removed to a second thickness less than the first thickness, while leaving an edge support ring of the base material of the first thickness and an asymmetric width around the semiconductor wafer. The second thickness of the base material is less than 75 micrometers. The wafer scribe mark is disposed within the edge support ring. The removed portion of the interior region of the second surface of the base material is vertically offset from the wafer scribe mark. A width of the edge support ring is wider to encompass the wafer scribe mark and narrower elsewhere around the semiconductor wafer.

A method for annealing a semiconductor die is provided. Information regarding layout of the semiconductor die is received. At least one annealing orbit on the semiconductor die is obtained according to the received information. An alignment procedure is performed on a plurality of alignment marks of the semiconductor die according to the received information. The semiconductor die is positioned according to the alignment marks. A laser beam with a first laser parameter is projected onto the positioned semiconductor die along the annealing orbit, so as to anneal a first portion of the positioned semiconductor die covered by the annealing orbit. The positioned semiconductor die is partially covered by the annealing orbit.

An apparatus for transferring a wafer according to the present disclosure includes a main body, a first support installed in the main body, a sensor support fixed to the first support, a finger member slidably installed along the first support to transfer the wafer and positioned at a lower level than the sensor support, three sensors each including a light emitter installed on the first support and a light receiver installed on the sensor support, the three sensors respectively configured to detect three points of an edge of the wafer seated on the finger member, and a controller connected to the three sensors, wherein the controller is configured to determine whether any of the three points of the edge of the wafer is detected from a notch of the wafer based on signals received from the sensors.

Some embodiments include an integrated assembly having a base supporting first circuitry and first conductive lines. The first conductive lines extend along a first direction and are associated with the first circuitry. A deck is over the base and supports an array of memory cells and second conductive lines which are associated with the array of memory cells. The second conductive lines extend along a second direction which is substantially orthogonal to the first direction. Vertical interconnects extend from the deck to the base and couple the first conductive lines to the second conductive lines. Each of the vertical interconnects couples one of the first conductive lines to one of the second conductive lines. Each of the second conductive lines is coupled with only one of the first conductive lines.

A wafer transfer apparatus includes a holding plate having a holding surface adapted to be opposed to one side of a wafer, a suction holding portion provided so as to be exposed to the holding surface for holding the wafer under suction in a noncontact fashion, three or more restricting members for restricting the movement of the wafer in a direction parallel to the one side of the wafer, each restricting member having a roller portion rotatable about its axis, the roller portion being adapted to come into contacted with the peripheral edge of the wafer held under suction by the suction holding portion, and a moving unit connected to the holding plate for moving the holding plate to thereby transfer the wafer. At least one of the restricting members functions as a rotational drive portion for rotating the roller portion about its axis to thereby rotate the wafer.

Semiconductor device packages and associated methods are disclosed herein. In some embodiments, the semiconductor device package includes (1) a first surface and a second surface opposite the first surface; (2) a semiconductor die positioned between the first and second surfaces; and (3) an indication positioned in a designated area of the first surface. The indication includes a code presenting information for operating the semiconductor die. The code is configured to be read by an indication scanner coupled to a controller.

A wafer processing method includes preparing a holding table having a blade clearance portion formed therein so as to correspond to a notch of a wafer, holding the wafer by the holding table so as to make the notch of the wafer correspond to the blade clearance portion of the holding table, reducing the diameter of the wafer by cutting the wafer by a cutting blade along an outer peripheral edge of the wafer in a state in which an end of the cutting blade is positioned below the holding surface of the holding table and therefore removing at least a part of the notch portion, and forming a second notch in the wafer by cutting the wafer in a thickness direction by the cutting blade along the blade clearance portion of the holding table.