An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

A semiconductor wafer has a plurality of semiconductor die with contact pads for electrical interconnect. An insulating layer is formed over the semiconductor wafer. A bump structure is formed over the contact pads. The bump structure has a buffer layer formed over the insulating layer and contact pad. A portion of the buffer layer is removed to expose the contact pad and an outer portion of the insulating layer. A UBM layer is formed over the buffer layer and contact pad. The UBM layer follows a contour of the buffer layer and contact pad. A ring-shaped conductive pillar is formed over the UBM layer using a patterned photoresist layer filled with electrically conductive material. A conductive barrier layer is formed over the ring-shaped conductive pillar. A bump is formed over the conductive barrier layer. The buffer layer reduces thermal and mechanical stress on the bump and contact pad.

A semiconductor wafer has a plurality of semiconductor die with contact pads for electrical interconnect. An insulating layer is formed over the semiconductor wafer. A bump structure is formed over the contact pads. The bump structure has a buffer layer formed over the insulating layer and contact pad. A portion of the buffer layer is removed to expose the contact pad and an outer portion of the insulating layer. A UBM layer is formed over the buffer layer and contact pad. The UBM layer follows a contour of the buffer layer and contact pad. A ring-shaped conductive pillar is formed over the UBM layer using a patterned photoresist layer filled with electrically conductive material. A conductive barrier layer is formed over the ring-shaped conductive pillar. A bump is formed over the conductive barrier layer. The buffer layer reduces thermal and mechanical stress on the bump and contact pad.

A magnetic field sensor includes a lead frame, a semiconductor die having a first surface in which a magnetic field sensing element is disposed and a second surface attached to the lead frame, and a non-conductive mold material enclosing the die and at least a portion of the lead frame. The sensor may include a ferromagnetic mold material secured to a portion of the non-conductive mold material. Features include a multi-sloped taper to an inner surface of a non-contiguous central region of the ferromagnetic mold material, a separately formed element disposed in the non-contiguous central region, one or more slots in the lead frame, a molded ferromagnetic suppression device spaced from the non-conductive mold material and enclosing a portion of a lead, a passive device spaced from the non-conductive mold material and coupled to a plurality of leads, and a ferromagnetic bead coupled to a lead. Also described is a coil secured to the non-conductive mold material and a lead having at least two separated portions with a passive component coupled across the two portions.

A magnetic field sensor includes a lead frame, a semiconductor die having a first surface in which a magnetic field sensing element is disposed and a second surface attached to the lead frame, and a non-conductive mold material enclosing the die and at least a portion of the lead frame. The sensor may include a ferromagnetic mold material secured to a portion of the non-conductive mold material. Features include a multi-sloped taper to an inner surface of a non-contiguous central region of the ferromagnetic mold material, a separately formed element disposed in the non-contiguous central region, one or more slots in the lead frame, a molded ferromagnetic suppression device spaced from the non-conductive mold material and enclosing a portion of a lead, a passive device spaced from the non-conductive mold material and coupled to a plurality of leads, and a ferromagnetic bead coupled to a lead. Also described is a coil secured to the non-conductive mold material and a lead having at least two separated portions with a passive component coupled across the two portions.

Provided is a semiconductor device stabilizing bond properties between an electrode terminal provided on a case and an internal wiring connected to a semiconductor element. A semiconductor device includes a base part, a semiconductor element, an electrode terminal, an insulating block, and an internal wiring. The semiconductor element is mounted on the base part. The electrode terminal is held by a case surrounding an outer periphery of the semiconductor element. An end portion of the electrode terminal protrudes toward an inner side of the case. The insulating block is provided on the base part between the semiconductor element and the case. In the internal wiring, one end portion is bonded to the end portion of the electrode terminal on the insulating block, and part of a region extending from the one end portion to the other end portion is bonded to the semiconductor element.

Provided is a semiconductor device stabilizing bond properties between an electrode terminal provided on a case and an internal wiring connected to a semiconductor element. A semiconductor device includes a base part, a semiconductor element, an electrode terminal, an insulating block, and an internal wiring. The semiconductor element is mounted on the base part. The electrode terminal is held by a case surrounding an outer periphery of the semiconductor element. An end portion of the electrode terminal protrudes toward an inner side of the case. The insulating block is provided on the base part between the semiconductor element and the case. In the internal wiring, one end portion is bonded to the end portion of the electrode terminal on the insulating block, and part of a region extending from the one end portion to the other end portion is bonded to the semiconductor element.

A blister package with an integrated RFID tag is provided. The conductive lidding material is modified to serve not only to seal some contents within some formed blister film, but also to act as an RFID tag antenna. An electronic circuit is electrically connected to the lidding film antenna. Methods of manufacture which integrate with conventional blister package manufacturing processes are also provided.

A blister package with an integrated RFID tag is provided. The conductive lidding material is modified to serve not only to seal some contents within some formed blister film, but also to act as an RFID tag antenna. An electronic circuit is electrically connected to the lidding film antenna. Methods of manufacture which integrate with conventional blister package manufacturing processes are also provided.