H01L2924/00014

Semiconductor device and method of manufacturing the semiconductor device
11581699 · 2023-02-14 · ·

A semiconductor device includes: a package including: a lower surface, at least one first metal surface at an outer periphery of the lower surface, and at least one second metal surface at the lower surface at a location different from the at least one first metal surface; a mounting substrate disposed below the package and including: an upper surface, at least one first metal pattern disposed at the upper surface below the at least one first metal surface, and at least one second metal pattern disposed at the upper surface below the at least one second metal surface; a first bonding member containing a metal material and bonding the at least one first metal surface and the at least one first metal pattern; and a second bonding member containing a metal material and bonding the at least one second metal surface and the at least one second metal pattern.

Semiconductor device and method of manufacturing the semiconductor device
11581699 · 2023-02-14 · ·

A semiconductor device includes: a package including: a lower surface, at least one first metal surface at an outer periphery of the lower surface, and at least one second metal surface at the lower surface at a location different from the at least one first metal surface; a mounting substrate disposed below the package and including: an upper surface, at least one first metal pattern disposed at the upper surface below the at least one first metal surface, and at least one second metal pattern disposed at the upper surface below the at least one second metal surface; a first bonding member containing a metal material and bonding the at least one first metal surface and the at least one first metal pattern; and a second bonding member containing a metal material and bonding the at least one second metal surface and the at least one second metal pattern.

Semiconductor package having wettable lead flank and method of making the same

A semiconductor package comprises a lead frame, a chip, and a molding encapsulation. The lead frame comprises one or more die paddles, a first plurality of leads, and a second plurality of leads. A respective end surface of each lead of the first plurality of leads and the second plurality of leads is plated with a metal. A first respective window on a first side of each lead of the first plurality of leads and the second plurality of leads is not plated with the metal. A second respective window on a second side of each lead of the first plurality of leads and the second plurality of leads is not plated with the metal. A method for fabricating a semiconductor package comprises the steps of providing a lead frame array, mounting a chip, forming a molding encapsulation, and applying a cutting process or a punching process.

Semiconductor package having wettable lead flank and method of making the same

A semiconductor package comprises a lead frame, a chip, and a molding encapsulation. The lead frame comprises one or more die paddles, a first plurality of leads, and a second plurality of leads. A respective end surface of each lead of the first plurality of leads and the second plurality of leads is plated with a metal. A first respective window on a first side of each lead of the first plurality of leads and the second plurality of leads is not plated with the metal. A second respective window on a second side of each lead of the first plurality of leads and the second plurality of leads is not plated with the metal. A method for fabricating a semiconductor package comprises the steps of providing a lead frame array, mounting a chip, forming a molding encapsulation, and applying a cutting process or a punching process.

Power semiconductor module with adhesive filled tapered portion
11581229 · 2023-02-14 · ·

Provided is a power semiconductor module that can secure insulating properties. A semiconductor element is mounted on a resin-insulated base plate including a circuit pattern, a resin insulating layer, and a base plate. A case enclosing the resin-insulated base plate is bonded to the resin insulating layer with an adhesive. The resin insulating layer and the case are bonded together with a region enclosed by the resin insulating layer and a tapered portion of the case formed closer to the resin insulating layer being filled with the adhesive made of a material identical to that of the sealing resin. Air bubbles in the adhesive appear in the tapered portion opposite to the resin insulating layer.

Power semiconductor module with adhesive filled tapered portion
11581229 · 2023-02-14 · ·

Provided is a power semiconductor module that can secure insulating properties. A semiconductor element is mounted on a resin-insulated base plate including a circuit pattern, a resin insulating layer, and a base plate. A case enclosing the resin-insulated base plate is bonded to the resin insulating layer with an adhesive. The resin insulating layer and the case are bonded together with a region enclosed by the resin insulating layer and a tapered portion of the case formed closer to the resin insulating layer being filled with the adhesive made of a material identical to that of the sealing resin. Air bubbles in the adhesive appear in the tapered portion opposite to the resin insulating layer.

Monolithic single chip integrated radio frequency front end module configured with single crystal acoustic filter devices

A method of manufacture and structure for a monolithic single chip single crystal device. The method can include forming a first single crystal epitaxial layer overlying the substrate and forming one or more second single crystal epitaxial layers overlying the first single crystal epitaxial layer. The first single crystal epitaxial layer and the one or more second single crystal epitaxial layers can be processed to form one or more active or passive device components. Through this process, the resulting device includes a monolithic epitaxial stack integrating multiple circuit functions.

Monolithic single chip integrated radio frequency front end module configured with single crystal acoustic filter devices

A method of manufacture and structure for a monolithic single chip single crystal device. The method can include forming a first single crystal epitaxial layer overlying the substrate and forming one or more second single crystal epitaxial layers overlying the first single crystal epitaxial layer. The first single crystal epitaxial layer and the one or more second single crystal epitaxial layers can be processed to form one or more active or passive device components. Through this process, the resulting device includes a monolithic epitaxial stack integrating multiple circuit functions.

Chip on film package

A chip on film package is disclosed, including a flexible film and a chip. The flexible film includes a film base, a patterned metal layer includes a plurality of pads and disposed on an upper surface of the film base, and a dummy metal layer covering a lower surface of the film base and capable of dissipating heat of the chip. The dummy metal layer comprises at least one opening exposing the second surface, and at least one of the plurality of pads is located within the at least one opening in a bottom view of the chip on film package. The chip is mounted on the plurality of pads of the patterned metal layer.

Cell-mounted monolithic integrated circuit for measuring, processing, and communicating cell parameters

A battery system has a battery cell including a can, and a ceramic substrate, including a patterned metallized surface, mounted to the can via a thermally conductive adhesive. The battery system also has a monolithic integrated circuit that measures and transmits data about the cell mounted to the patterned metallized surface such that the ceramic substrate and monolithic integrated circuit are electrically isolated from one another.