Disclosed herein are structures and techniques related to singulation of microelectronic components with direct bonding interfaces. For example, in some embodiments, a microelectronic component may include: a surface, wherein conductive contacts are at the surface; a trench at a perimeter of the surface; and a burr in the trench.

Disclosed herein are structures and techniques related to singulation of microelectronic components with direct bonding interfaces. For example, in some embodiments, a microelectronic component may include: a surface, wherein conductive contacts are at the surface; a trench at a perimeter of the surface; and a burr in the trench.

A die stack structure includes an interconnection structure, a logic die, a control die, a first insulating encapsulant, a dummy die, a memory cube and a second insulating encapsulant. The logic die is electrically connected to the interconnection structure. The logic die comprises a first dielectric bonding structure. The control die is laterally separated from the logic die and electrically connected to the interconnection structure. The first insulating encapsulant laterally encapsulates the logic die and the control die. The dummy die is stacked on the logic die, the logic die is located between the interconnection structure and the dummy die, the dummy die comprises a second dielectric bonding structure, and a bonding interface is located between the first dielectric bonding structure and the second dielectric bonding structure. The memory cube is stacked on and electrically connected to the control die, wherein the control die is located between the interconnection structure and the memory cube. The second insulating encapsulant laterally encapsulates the dummy die and the memory cube.

A die stack structure includes an interconnection structure, a logic die, a control die, a first insulating encapsulant, a dummy die, a memory cube and a second insulating encapsulant. The logic die is electrically connected to the interconnection structure. The logic die comprises a first dielectric bonding structure. The control die is laterally separated from the logic die and electrically connected to the interconnection structure. The first insulating encapsulant laterally encapsulates the logic die and the control die. The dummy die is stacked on the logic die, the logic die is located between the interconnection structure and the dummy die, the dummy die comprises a second dielectric bonding structure, and a bonding interface is located between the first dielectric bonding structure and the second dielectric bonding structure. The memory cube is stacked on and electrically connected to the control die, wherein the control die is located between the interconnection structure and the memory cube. The second insulating encapsulant laterally encapsulates the dummy die and the memory cube.

A electronic module includes a printed circuit board (PCB) substrate, a controller substrate, a controller, a memory device, and a heat spreader. The controller is disposed on the controller substrate. The memory device is disposed on the PCB substrate. The heat spreader is disposed on the controller and the memory device, in which the heat spreader has a first portion on the controller and a second portion on the memory device, and the heat spreader has a first opening between the first portion and the second portion.

A electronic module includes a printed circuit board (PCB) substrate, a controller substrate, a controller, a memory device, and a heat spreader. The controller is disposed on the controller substrate. The memory device is disposed on the PCB substrate. The heat spreader is disposed on the controller and the memory device, in which the heat spreader has a first portion on the controller and a second portion on the memory device, and the heat spreader has a first opening between the first portion and the second portion.

Anisotropic conductive films, each including an insulating adhesive layer and conductive particles insulating adhesive layer in a lattice-like manner. Among center distances between an arbitrary conductive particle and conductive particles adjacent to the conductive particle, the shortest distance to the conductive particle is a first center distance; the next shortest distance is a second center distance. These center distances are 1.5 to 5 times the conductive particles' diameter. The arbitrary conductive particle, conductive particle spaced apart from the conductive particle by the first center distance, conductive particle spaced apart from the conductive particle by first center distance or second center distance form an acute triangle. Regarding this acute triangle, an acute angle formed between a straight line orthogonal to a first array direction passing through the conductive particles and second array direction passing through conductive particles being 18 to 35°. These anisotropic conductive films have stable connection reliability in COG connection.

Anisotropic conductive films, each including an insulating adhesive layer and conductive particles insulating adhesive layer in a lattice-like manner. Among center distances between an arbitrary conductive particle and conductive particles adjacent to the conductive particle, the shortest distance to the conductive particle is a first center distance; the next shortest distance is a second center distance. These center distances are 1.5 to 5 times the conductive particles' diameter. The arbitrary conductive particle, conductive particle spaced apart from the conductive particle by the first center distance, conductive particle spaced apart from the conductive particle by first center distance or second center distance form an acute triangle. Regarding this acute triangle, an acute angle formed between a straight line orthogonal to a first array direction passing through the conductive particles and second array direction passing through conductive particles being 18 to 35°. These anisotropic conductive films have stable connection reliability in COG connection.

An electrical connection member (1, 301, 401, 501, 601) includes a clad material (10, 110, 610) including at least both a first Cu layer (12) made of a Cu material and a low thermal expansion layer (11) made of an Fe material or Ni material having an average thermal expansion coefficient from room temperature to 300° C. smaller than that of the first Cu layer, the first Cu layer and the low thermal expansion layer being bonded to each other.

An electrical connection member (1, 301, 401, 501, 601) includes a clad material (10, 110, 610) including at least both a first Cu layer (12) made of a Cu material and a low thermal expansion layer (11) made of an Fe material or Ni material having an average thermal expansion coefficient from room temperature to 300° C. smaller than that of the first Cu layer, the first Cu layer and the low thermal expansion layer being bonded to each other.