A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

A semiconductor chip includes a semiconductor substrate made of SiC, a front surface electrode formed in a principal surface of the semiconductor substrate, and a rear surface electrode (drain electrode) formed in a rear surface of the semiconductor substrate. The front surface electrode is bonded to a wire, and includes an Al alloy film containing a high melting-point metal. The Al alloy film contains a columnar Al crystal which extends along a thickness direction of the Al alloy film, and an intermetallic compound is precipitated therein.

A semiconductor chip includes a semiconductor substrate made of SiC, a front surface electrode formed in a principal surface of the semiconductor substrate, and a rear surface electrode (drain electrode) formed in a rear surface of the semiconductor substrate. The front surface electrode is bonded to a wire, and includes an Al alloy film containing a high melting-point metal. The Al alloy film contains a columnar Al crystal which extends along a thickness direction of the Al alloy film, and an intermetallic compound is precipitated therein.

Described herein are devices and techniques for thermocompression bonding. A device can include a housing, a platform, and a plasma jet. The housing can define a chamber. The platform can be located within the chamber and can be proximate a thermocompression chip bonder. The plasma jet can be located proximate the platform. The plasma jet can be movable about the platform. The plasma jet can include a nozzle arranged to direct a plasma gas onto the platform. Also described are other embodiments for thermocompression bonding.

A method of three-dimensionally integrating elements such as singulated die or wafers and an integrated structure having connected elements such as singulated dies or wafers. Either or both of the die and wafer may have semiconductor devices formed therein. A first element having a first contact structure is bonded to a second element having a second contact structure. First and second contact structures can be exposed at bonding and electrically interconnected as a result of the bonding. A via may be etched and filled after bonding to expose and form an electrical interconnect to interconnected first and second contact structures and provide electrical access to this interconnect from a surface.

Wire bonding operations can be facilitated through the use of metal nanoparticle compositions. Both ball bonding and wedge bonding processes can be enhanced in this respect. Wire bonding methods can include providing a wire payout at a first location from a rolled wire source via a dispensation head, contacting a first metal nanoparticle composition and a first portion of the wire payout with a bonding pad, and at least partially fusing metal nanoparticles in the first metal nanoparticle composition together to form an adhering interface between the bonding pad and the first portion of the wire payout. The adhering interface can have a nanoparticulate morphology. Wire bonding systems can include a rolled wire source, a dispensation head configured to provide a wire payout, and an applicator configured to place a metal nanoparticle composition upon at least a portion of the wire payout or upon a bonding pad.

Wire bonding operations can be facilitated through the use of metal nanoparticle compositions. Both ball bonding and wedge bonding processes can be enhanced in this respect. Wire bonding methods can include providing a wire payout at a first location from a rolled wire source via a dispensation head, contacting a first metal nanoparticle composition and a first portion of the wire payout with a bonding pad, and at least partially fusing metal nanoparticles in the first metal nanoparticle composition together to form an adhering interface between the bonding pad and the first portion of the wire payout. The adhering interface can have a nanoparticulate morphology. Wire bonding systems can include a rolled wire source, a dispensation head configured to provide a wire payout, and an applicator configured to place a metal nanoparticle composition upon at least a portion of the wire payout or upon a bonding pad.

Systems and methods are provided for contact formation. A semiconductor structure is provided. The semiconductor structure includes an opening formed by a bottom surface and one or more side surfaces. A first conductive material is formed on the bottom surface and the one or more side surfaces to partially fill the opening, the first conductive material including a top portion and a bottom portion. Ion implantation is formed on the first conductive material, the top portion of the first conductive material being associated with a first ion density, the bottom portion of the first conductive material being associated with a second ion density lower than the first ion density. At least part of the top portion of the first conductive material is removed. A second conductive material is formed to fill the opening.

Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a plurality of contact pads over a substrate, and forming an insulating material over the plurality of contact pads and the substrate. The insulating material is patterned to form an opening over each of the plurality of contact pads, and the plurality of contact pads is cleaned. The method includes forming an under-ball metallization (UBM) structure over the plurality of contact pads and portions of the insulating material. Cleaning the plurality of contact pads recesses a top surface of each of the plurality of contact pads.

Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a plurality of contact pads over a substrate, and forming an insulating material over the plurality of contact pads and the substrate. The insulating material is patterned to form an opening over each of the plurality of contact pads, and the plurality of contact pads is cleaned. The method includes forming an under-ball metallization (UBM) structure over the plurality of contact pads and portions of the insulating material. Cleaning the plurality of contact pads recesses a top surface of each of the plurality of contact pads.